IXYS IXTT64N25P

IXTQ 64N25P
IXTT 64N25P
PolarHTTM
Power MOSFET
VDSS
ID25
= 250 V
= 64 A
Ω
= 48 mΩ
RDS(on)
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGSM
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
250
250
V
V
±20
V
64
A
160
A
TC = 25°C
60
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TO-3P (IXTQ)
G
D
TO-268 (IXTT)
TJ ≤ 150°C, RG = 4 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-3P
TO-268
(TO-3P)
1.13/10 Nm/lb.in.
G
G = Gate
S = Source
g
g
S
D (TAB)
D = Drain
TAB = Drain
Features
z
z
5.5
5.0
(TAB)
S
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
z
VDSS
VGS = 0 V, ID = 250 µA
250
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
z
V
5.0
V
±100
nA
25
250
µA
µA
48
mΩ
z
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99120A(02/04)
IXTQ 64N25P
IXTT 64N25P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
22
30
S
3450
pF
640
pF
155
pF
21
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
23
ns
td(off)
RG = 4 Ω (External)
60
ns
20
ns
105
nC
24
nC
53
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.31 K/W
(TO-3P)
Source-Drain Diode
0.21
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
64
A
ISM
Repetitive
160
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
TO-3P (IXTQ) Outline
200
ns
3.0
µC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTQ 64N25P
IXTT 64N25P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
64
VGS = 10V
56
9V
140
40
I D - Amperes
I D - Amperes
48
VGS = 10V
160
9V
8V
7V
32
24
120
100
8V
80
7V
60
6V
16
40
8
5V
6V
20
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
2
4
6
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
10
12
14
16
18
20
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Te m perature
64
2.8
VGS = 10V
56
R D S ( o n ) - Normalized
7V
40
32
6V
24
VGS = 10V
2.5
9V
8V
48
I D - Amperes
8
V D S - Volts
16
2.2
1.9
I D = 64A
1.6
I D = 32A
1.3
1
5V
8
0.7
0
0.4
0
1
2
3
4
5
6
7
8
-50
V D S - Volts
0.5 ID25 Value vs. ID
75
100
125
150
50
2.8
I D - Amperes
R D S ( o n ) - Normalized
50
60
TJ = 125ºC
3.1
25
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
70
VGS = 10V
3.4
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alize d to
3.7
-25
2.5
2.2
1.9
1.6
40
30
20
TJ = 25ºC
1.3
10
1
0
0.7
0
30
60
90
120
I D - Amperes
© 2004 IXYS All rights reserved
150
180
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTQ 64N25P
IXTT 64N25P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
120
60
105
TJ = -40ºC
50
25ºC
125ºC
g f s - Siemens
I D - Amperes
90
75
60
45
TJ = 125ºC
30
25ºC
-40ºC
15
40
30
20
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
15
30
45
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
75
90
105
120
135
Fig. 10. Gate Charge
10
180
150
120
VG S - Volts
I S - Amperes
60
I D - Amperes
90
60
TJ = 125ºC
9
VDS = 125V
8
I D = 32A
7
I G = 10mA
6
5
4
3
2
TJ = 25ºC
30
1
0
0
0.4
0.6
0.8
1
V S D - Volts
1.2
1.4
0
10
20
30
40
50
60
70
90 100 110
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
1000
10000
f = 1MHz
TJ = 150ºC
C iss
1000
R DS(on) Limit
I D - Amperes
Capacitance - picoFarads
80
Q G - nanoCoulombs
C oss
TC = 25ºC
100
25µs
1ms
100µs
10ms
10
DC
C rss
100
1
0
5
10
15
20
25
V D S - Volts
30
35
40
10
100
V D S - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTQ 64N25P
IXTT 64N25P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
1000