IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW VGES V 1200 V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 25 A ICM TC = 90°C, tp = 1 ms 50 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 82 W Clamped inductive load, L = 30 µH ICM = 35 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 82 W, non repetitive 10 µs PC TC = 25°C G = Gate, C = Collector , E = Emitter TAB = Collector Features ● ● ● ● ● ● ● ● ● NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages ● ● IGBT Diode C (TAB) E E 200 75 W W TJ -55 ... +150 °C Tstg -55 ... +150 °C 300 °C Space savings High power density Typical Applications ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ● ● ● ● Md Mounting torque 0.8 - 1.2 Weight Nm 6 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 0.6 mA, VCE = VGE ICES VCE = VCES AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 TJ = 25°C TJ = 125°C VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 20 A, VGE = 15 V 4.5 6.5 2 V 1 mA mA ± 500 nA 2.4 3 V 031 IGES V © 2000 IXYS All rights reserved 1-4 IXDH 20N120 IXDH 20N120 D1 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 20 A, VGE = 15 V, VCE = 0.5 VCES td(on) tr td(off) tf Inductive load, TJ = 125°C IC = 20 A, VGE = ±15 V, VCE = 600 V, RG = 82 W 1000 pF 150 pF 70 pF 70 nC 100 ns 75 ns 500 ns 70 ns Eon 3.1 mJ Eoff 2.4 mJ RthJC RthCH TO-247 AD Outline 0.63 K/W Package with heatsink compound Reverse Diode (FRED) [D1 version only] Conditions VF IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 20 A, -diF/dt = 400 A/µs, VR = 600 V trr VGE = 0 V, TJ = 125°C trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V © 2000 IXYS All rights reserved K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol RthJC 0.25 2.6 2.1 2.8 V V 33 20 A A 15 A 200 ns 40 ns Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1.6 K/W 2-4 IXDH 20N120 IXDH 20N120 D1 40 35 A IC 40 VGE=17V 15V TJ = 25°C VGE=17V TJ = 125°C A 35 30 13V IC 30 13V 25 11V 25 11V 20 20 15 15 9V 10 9V 10 5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 40 2.5 3.0 VCE 3.5 V Fig. 2 Typ. output characteristics 45 VCE = 20V 35 A IC 15V A 40 TJ = 25°C 35 30 IF 25 30 25 20 20 15 TJ = 125°C 15 10 10 5 5 0 5 6 7 8 9 10 11 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode (D1 version only) 400 20 20 V VCE = 600V IC TJ = 25°C A = 20A VGE 15 IRM 15 10 10 5 5 ns 300 trr trr 200 TJ= 125°C VR= 600V IF = 20A IRM IXDH20N120D1 0 0 0 10 20 30 40 50 60 70 QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 80 nC 0 100 200 300 400 A/ms -di/dt 100 0 Fig. 6 Typ. turn off characteristics of free wheeling diode (D1 version only) 3-4 IXDH 20N120 IXDH 20N120 D1 7 Eon 5 140 6 mJ ns 120 5 100 4 80 td(on) 3 2 Eon 10 20 30 4 t VCE = 600V VGE = ±15V 200 RG = 82W TJ = 125°C 1 100 tf 0 0 10 20 IC Fig. 7 Typ. turn on energy and switching times versus collector current Eon 8 Fig. 8 Typ. turn off energy and switching times versus collector current 4 240 VCE = 600V VGE = ±15V IC = 20A TJ = 125°C mJ td(on) Eon 160 t 3 Eoff 1600 Eoff VCE = 600V VGE = ±15V IC = 20A TJ = 125°C mJ ns tr 4 ns td(off) 1200 2 800 1 400 t 80 0 0 50 100 150 200 250 300 W tf 0 0 350 0 50 100 150 RG 10 A 35 K/W 1 25 RG = 82W TJ = 125°C VCEK < VCES 20 15 10 ZthJC 0.1 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 300 0 W 350 diode IGBT 0.01 0.001 5 250 Fig.10 Typ. turn off energy and switching times versus gate resistor 40 30 200 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 0 40 A 30 IC 12 400 300 2 0 40 A ns Eoff 3 20 0 0 Eoff VCE = 600V VGE = ±15V 60 RG = 82W TJ = 125°C 40 tr 1 t 500 td(off) mJ single pulse 0.0001 0.00001 0.0001 IXDH20N120D1 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4