MegaMOSTMFET Module VMO 380-02 F VDSS ID25 RDS(on) = 200 V = 385 A Ω = 4.6 mΩ 1 N-Channel Enhancement Mode 11 Preliminary data 10 Symbol Test Conditions 2 TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; R GS = 10 kΩ 200 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T K = 25°C 385 A I DM T K = 25°C, t P = 10 µs 1540 A PD TC = 25°C T K = 25°C 2230 1505 W W -40 ...+150 °C TJM 150 °C Tstg -40 ... +125 °C TJ 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 1 = Drain 10 = Kelvin Source V~ V~ Mounting torque (M6) Terminal connection torque (M5) Weight typical including screws Symbol Test Conditions 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 ● ● ● ● ● g 2 = Source 11 = Gate Features ● Md 10 2 1 VDSS VISOL 11 Maximum Ratings International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive Applications Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. ● ● VDSS VGS = 0 V, ID = 12 mA VGS(th) V DS = 20 V, ID = 120 mA I GSS VGS = ±20 V DC, VDS = 0 I DSS V DS = VDSS , VGS = 0 V V DS = 0.8 • VDSS, VGS = 0 V RDS(on) 200 3 V 6 ● V ● ±500 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers in fork lift trucks nA 2,5 mA 12 mA Advantages ● 4.6 mΩ ● ● ● Easy to mount Space and weight savings High power density Low losses IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMO 380-02 F Symbol Test Conditions (TJ ID=0.5•ID25 Characteristic Values unless otherwise specified) min. typ. m a x . 25°C, TBD S 48 nF 8.8 nF Crss 3.1 nF t d(on) 210 ns 500 ns 900 ns 350 2090 ns nC 385 nC 1045 nC g fs V D S =10V; = pulsed C iss Coss VGS =0V, tr VGS=10V, t d(off) RG = 1 VDS=25V, f=1 MHz VDS=0.5•VDSS, Ω ID=0.5•ID25 (External) tf Qg Qgs VGS=10V, VDS=0.5•VDSS, ID=0.5•ID25 Q gd R thJC R thJK 0.056 K / W µm with 30 Source-Drain heat paste Diode (TJ Conditions Symbol Test IS V GS =0 I SM Repetitive; VSD IF=I S; Pulse VGS=0V, test, t≤300µs, IF IS , t rr transfer = pulse -di/dt = width = 25°C, limited 0.083 K / W Characteristic Values unless otherwise specified) min. typ. m a x . by TJM 385 A 1540 A 1.2 V 0.9 duty 1200 cycle d≤2% A/ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Dimensions in mm (1 mm = 0.0394") VMO 380-02 F 1200 ID 1200 ID A VGS = 10 V 9V 8V 1000 800 VDS = 30 V A 1000 800 7V 600 600 6V 400 400 200 200 5V T J = 125°C 0 TJ = 25°C 0 0 1 2 3 4 VDS 5 V 6 0 Fig. 1 Typical output characteristics ID = f (VDS) 2 4 VGS 6 V 8 Fig. 2 Typical transfer characteristics ID = f (VGS) 1.4 2.5 RDS(on) RDS(on) norm. 1.3 norm. 2.0 1.2 ID = 190 A VGS = 10 V 1.1 1.5 V GS = 15 V 1.0 1.0 0.9 0.8 0 200 400 600 800 1000 A ID 0.5 -50 1200 Fig. 3 Typical RDS(on) = f (ID), normalized 450 -25 350 25 50 75 100 TJ 125 °C150 Fig. 4 RDS(on) = f (TJ), normalized 1.2 VDSS V GS(th)1.1 ID 400 A 0 VGS(th) norm. 300 VDSS 1.0 250 0.9 200 150 0.8 100 0.7 50 0 0 25 50 75 100 TS 125 °C 150 Fig. 5 Continuous drain current ID = f (TK) 0.6 -50 -25 0 25 50 75 100 TJ 125 °C150 Fig. 6 VDSS = f (TJ), VGS(th) = f (TJ), normalized IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMO 380-02 F 15 V GS 10000 VDS = 100 V ID = 190 A IG = 11 mA V 12 ID T S = 25°C T J = 150°C non-repetitive A Limited by RDS(on) 1000 t = 1 ms 9 6 100 t = 10 ms 3 t = 100 ms 0 10 0 500 1000 1500 2000 2500 nC 3000 Qg 1 100 V 1000 VDS Fig. 7 Typical turn-on gate charge characteristics Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS ) 1000 1200 A nF 1000 IS C 10 800 100 Ciss 600 T J = 125°C Coss TJ = 25°C 400 10 Crss 200 1 0 5 10 15 20 VDS 0 0.00 0 25 V Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz Id 0.50 0.75 1.00 1.25 V 1.50 VSD Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD ) 0.1 1000 900 0.25 TK = 80°C D= 0.1 K/W D = 0.5 800 700 600 D= 0.2 D= 0.3 500 D= 0.4 400 D= 0.5 300 ZthJK D= 0.2 0.01 D= 0.1 D=0.05 D= 0.7 D=0.02 200 D=0.01 100 D = single pulse 0 0.0001 0.001 0.01 s 1 0.1 0.001 0.001 Fig. 11 Drain current versus pulse width and duty cycle 0.01 0.1 1 s 10 tp tp Fig. 12 Transient thermal resistance ZthJK = f (tp) IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025