IXYS VMO380-02F

MegaMOSTMFET
Module
VMO 380-02 F VDSS
ID25
RDS(on)
= 200 V
= 385 A
Ω
= 4.6 mΩ
1
N-Channel Enhancement Mode
11
Preliminary data
10
Symbol
Test Conditions
2
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; R GS = 10 kΩ
200
V
V GS
Continuous
±20
V
V GSM
Transient
±30
V
I D25
T K = 25°C
385
A
I DM
T K = 25°C, t P = 10 µs
1540
A
PD
TC = 25°C
T K = 25°C
2230
1505
W
W
-40 ...+150
°C
TJM
150
°C
Tstg
-40 ... +125
°C
TJ
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
3000
3600
1 = Drain
10 = Kelvin Source
V~
V~
Mounting torque (M6)
Terminal connection torque (M5)
Weight
typical including screws
Symbol
Test Conditions
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
250
●
●
●
●
●
g
2 = Source
11 = Gate
Features
●
Md
10
2
1
VDSS
VISOL
11
Maximum Ratings
International standard package
Direct Copper Bonded Al2O3 ceramic
base plate
Isolation voltage 3600 V~
Low RDS(on) HDMOSTM process
Low package inductance for high
speed switching
Kelvin Source contact for easy drive
Applications
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.
typ. max.
●
●
VDSS
VGS = 0 V, ID = 12 mA
VGS(th)
V DS = 20 V, ID = 120 mA
I GSS
VGS = ±20 V DC, VDS = 0
I DSS
V DS = VDSS ,
VGS = 0 V
V DS = 0.8 • VDSS, VGS = 0 V
RDS(on)
200
3
V
6
●
V
●
±500
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
AC motor speed control for electric
vehicles
DC servo and robot drives
Switched-mode and resonant-mode
power supplies
DC choppers in fork lift trucks
nA
2,5 mA
12 mA
Advantages
●
4.6 mΩ
●
●
●
Easy to mount
Space and weight savings
High power density
Low losses
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
VMO 380-02 F
Symbol
Test
Conditions
(TJ
ID=0.5•ID25
Characteristic
Values
unless otherwise specified)
min. typ. m a x .
25°C,
TBD
S
48
nF
8.8
nF
Crss
3.1
nF
t d(on)
210
ns
500
ns
900
ns
350
2090
ns
nC
385
nC
1045
nC
g fs
V D S =10V;
=
pulsed
C iss
Coss
VGS
=0V,
tr
VGS=10V,
t d(off)
RG = 1
VDS=25V,
f=1
MHz
VDS=0.5•VDSS,
Ω
ID=0.5•ID25
(External)
tf
Qg
Qgs
VGS=10V,
VDS=0.5•VDSS,
ID=0.5•ID25
Q gd
R thJC
R thJK
0.056 K / W
µm
with 30
Source-Drain
heat
paste
Diode
(TJ
Conditions
Symbol
Test
IS
V GS =0
I SM
Repetitive;
VSD
IF=I S;
Pulse
VGS=0V,
test, t≤300µs,
IF
IS ,
t rr
transfer
=
pulse
-di/dt
=
width
=
25°C,
limited
0.083 K / W
Characteristic
Values
unless otherwise specified)
min. typ. m a x .
by
TJM
385
A
1540
A
1.2
V
0.9
duty
1200
cycle
d≤2%
A/
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Dimensions in mm (1 mm = 0.0394")
VMO 380-02 F
1200
ID
1200
ID
A
VGS = 10 V
9V
8V
1000
800
VDS = 30 V
A
1000
800
7V
600
600
6V
400
400
200
200
5V
T J = 125°C
0
TJ = 25°C
0
0
1
2
3
4
VDS
5
V
6
0
Fig. 1 Typical output characteristics ID = f (VDS)
2
4
VGS
6
V
8
Fig. 2 Typical transfer characteristics ID = f (VGS)
1.4
2.5
RDS(on)
RDS(on)
norm.
1.3
norm.
2.0
1.2
ID = 190 A
VGS = 10 V
1.1
1.5
V GS = 15 V
1.0
1.0
0.9
0.8
0
200
400
600
800
1000
A
ID
0.5
-50
1200
Fig. 3 Typical RDS(on) = f (ID), normalized
450
-25
350
25
50
75
100
TJ
125 °C150
Fig. 4 RDS(on) = f (TJ), normalized
1.2
VDSS
V GS(th)1.1
ID 400
A
0
VGS(th)
norm.
300
VDSS
1.0
250
0.9
200
150
0.8
100
0.7
50
0
0
25
50
75
100
TS
125 °C 150
Fig. 5 Continuous drain current ID = f (TK)
0.6
-50
-25
0
25
50
75
100
TJ
125 °C150
Fig. 6 VDSS = f (TJ), VGS(th) = f (TJ), normalized
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
VMO 380-02 F
15
V GS
10000
VDS = 100 V
ID = 190 A
IG = 11 mA
V
12
ID
T S = 25°C
T J = 150°C
non-repetitive
A
Limited by RDS(on)
1000
t = 1 ms
9
6
100
t = 10 ms
3
t = 100 ms
0
10
0
500
1000
1500
2000
2500
nC
3000
Qg
1
100
V
1000
VDS
Fig. 7 Typical turn-on gate charge characteristics
Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS )
1000
1200
A
nF
1000
IS
C
10
800
100
Ciss
600
T J = 125°C
Coss
TJ = 25°C
400
10
Crss
200
1
0
5
10
15
20
VDS
0
0.00
0
25
V
Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz
Id
0.50
0.75
1.00
1.25 V 1.50
VSD
Fig. 10 Typical forward characteristics of reverse
diode, IS = f (VSD )
0.1
1000
900
0.25
TK = 80°C
D= 0.1
K/W
D = 0.5
800
700
600
D= 0.2
D= 0.3
500
D= 0.4
400
D= 0.5
300
ZthJK
D= 0.2
0.01
D= 0.1
D=0.05
D= 0.7
D=0.02
200
D=0.01
100
D = single pulse
0
0.0001
0.001
0.01
s 1
0.1
0.001
0.001
Fig. 11 Drain current versus pulse width and
duty cycle
0.01
0.1
1
s
10
tp
tp
Fig. 12 Transient thermal resistance ZthJK = f (tp)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025