MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS(on) = 200 V = 418 A Ω = 4.2 mΩ 1 N-Channel Enhancement Mode 11 10 Symbol Test Conditions 2 TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; R GS = 10 kΩ 200 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T K = 25°C 418 A I DM T K = 25°C, t P = 10 µs 1672 A PD TC = 25°C T K = 25°C 2450 1640 W W -40 ...+150 °C TJM 150 °C Tstg -40 ... +125 °C TJ 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 1 = Drain 10 = Kelvin Source V~ V~ Mounting torque (M6) Terminal connection torque (M5) Weight typical including screws Symbol Test Conditions 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 ● ● ● ● ● g 2 = Source 11 = Gate Features ● Md 10 2 1 VDSS VISOL 11 Maximum Ratings International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive Applications Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. ● ● VDSS VGS = 0 V, ID = 12 mA VGS(th) V DS = 20 V, ID = 120 mA I GSS VGS = ±20 V DC, VDS = 0 I DSS V DS = VDSS , VGS = 0 V V DS = 0.8 • VDSS, VGS = 0 V RDS(on) 200 3 V 6 ● V ● ±500 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers nA 2.5 mA 12 mA Advantages ● 4.2 mΩ ● ● ● Easy to mount Space and weight savings High power density Low losses IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMO 400-02F Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 • ID25 pulsed 380 S 53 nF 9.6 nF Crss 3.4 nF td(on) 210 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, V DS = 0.5 • VDSS , ID = 0.5 • ID25 500 ns td(off) RG = 1 Ω (External) 900 ns 350 ns 2300 nC 420 nC 1150 nC tf Qg VGS = 10 V, V DS = 0.5 • VDSS , ID = 0.5 • ID25 Qgs Qgd 0.051 K/W RthJC RthJK with 30 µm heat transfer paste Source-Drain Diode 0.076 K/W Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V I SM Repetitive; pulse width limited by TJM V SD IF = I S; VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.9 trr IF 600 = IS, -di/dt = 1200 A/µs, VDS = 100 V IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 418 A 1672 A 1.2 V ns Dimensions in mm (1 mm = 0.0394") VMO 400-02F 1250 ID 1250 ID VGS = 10 V A 9V 1000 VDS = 30 V A 1000 8V 7V 750 750 6V 500 500 250 250 5V T J = 125°C 0 TJ = 25°C 0 0 1 2 3 4 5 VDS V 6 0 Fig. 1 Typical output characteristics ID = f (VDS ) 2 4 VGS 6 V 8 Fig. 2 Typical transfer characteristics ID = f (VGS) 1,4 2,5 RDS(on) RDS(on) 1,3 norm. norm. 2,0 1,2 ID = 210 A VGS = 10 V 1,1 1,5 V GS = 15 V 1,0 1,0 0,9 0,8 0 200 400 600 800 1000 A ID 0,5 -50 1200 Fig. 3 Typical RDS(on) = f (ID), normalized 450 350 0 25 50 75 100 TJ 125 °C150 Fig. 4 RDS(on) = f (TJ), normalized 1,2 VDSS V GS(th)1,1 ID 400 A -25 V GS(th) norm. 300 VDSS 1,0 250 0,9 200 150 0,8 100 0,7 50 0 0 25 50 75 100 TS 125 °C 150 Fig. 5 Continuous drain current ID = f (TK) 0,6 -50 -25 0 25 50 75 100 TJ 125 °C150 Fig. 6 VDSS = f (TJ), VGS(th) = f (TJ), normalized IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMO 400-02F 15 V GS 10000 VDS = 100 V ID = 210 A IG = 12 mA V 12 ID A Limited by RDS(on) 1000 t = 1 ms 9 t = 10 ms 100 6 t = 100 ms 10 3 DC operation 0 T S = 25°C T J = 150°C non-repetitive 1 0 500 1000 1500 2000 2500 nC 3000 Qg 1 100 V 1000 VDS Fig. 7 Typical turn-on gate charge characteristics Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS ) 1000 1200 A nF 1000 IS C 10 800 100 Ciss 600 T J = 125°C Coss TJ = 25°C 400 10 Crss 200 1 0 5 10 15 20 VDS V 0 0.00 0 25 Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz A 900 0.75 1.00 1.25 V 1.50 VSD 0.1 TK = 80°C D= 0.1 K/W D = 0.5 800 700 0.50 Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) 1000 Id 0.25 ZthJK D= 0.2 D= 0.2 600 500 400 D= 0.3 D= 0.4 0.01 D= 0.1 D= 0.5 D=0.05 D= 0.7 300 D=0.02 200 D=0.01 100 D = single pulse 0 0.0001 0.001 0.01 0.1 s 1 0.001 0.001 Fig. 11 Drain current versus pulse width and duty cycle 0.01 0.1 1 s 10 tp tp Fig. 12 Transient thermal resistance ZthJK = f (tp) IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025