Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS(on) 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 TC = 25°C 12 A I DM TC = 25°C, pulse width limited by TJM 48 A PD TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain °C 300 Features ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) V DS = VGS, ID = 250 µA 2 I GSS VGS = ±20 VDC, VDS = 0 I DSS V DS = 0.8 • VDSS VGS = 0 V RDS(on) Applications ● ● ● TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 V 4 V ±100 nA 200 1 µA mA 0.40 Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times ● Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages ● ● ● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91541E(5/96) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 12N50A IXTM 12N50A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 • ID25, pulse test 7.5 9 S 2800 pF 300 pF Crss 70 pF td(on) 18 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 27 40 ns td(off) RG = 4.7 Ω, (External) 76 100 ns 32 60 ns 110 120 nC 15 25 nC 40 50 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 0.70 RthCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A I SM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 600 TO-247 AD (IXTH) Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-204AA (IXTM) Outline ns Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅b .97 1.09 ∅D 22.22 e 10.67 11.17 e1 5.21 5.71 L 7.93 ∅p 3.84 4.19 ∅p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 IXTH 12N50A IXTM 12N50A Fig. 1 Output Characteristics 25 Fig. 2 Input Admittance 25 7V VGS = 10V TJ = 25°C 20 20 ID - Amperes ID - Amperes 6V 15 10 5V 15 TJ = 25°C 10 5 5 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 5 6 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 2.50 T J = 25°C 2.25 RDS(on) - Normalized 1.3 1.2 1.1 VGS = 10V 1.0 V GS = 15V 0.9 2.00 1.75 ID = 6A 1.50 1.25 1.00 0.75 0.8 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 25 50 75 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 15.0 1.2 12.5 1.1 BV/VG(th) - Normalized VGS(th) 12N50A 10.0 7.5 5.0 2.5 BVDSS 1.0 0.9 0.8 0.7 0.6 0.0 -50 100 125 150 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 7 VGS - Volts Fig. 3 RDS(on) vs. Drain Current RDS(on) - Normalized 4 -25 0 25 50 75 100 125 150 TC - Degrees C 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 12N50A IXTM 12N50A Fig.7 Gate Charge Characteristic Curve 10 100 VDS = 250V 9 ID = 6.5A 8 10µs IG = 10mA ID - Amperes 7 VGS - Volts Fig.8 Forward Bias Safe Operating Area 6 5 4 3 10 Limited by RDS(on) 100µs 1ms 1 10ms 2 100ms 1 0 0.1 0 25 50 75 100 1 10 Gate Charge - nCoulombs 100 VDS - Volts Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 4000 25 20 3000 Ciss IS - Amperes Capacitance - pF 3500 2500 2000 1500 15 T J = 125°C 10 TJ = 25°C 1000 5 Coss 500 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.50 0.75 1.00 1.25 1.50 VSD - Volt Fig.11 Transient Thermal Impedance Thermal Response - K/W 1.00 D = 0.5 D = 0.2 0.10 D = 0.1 D = 0.05 D=0.02 D=0.01 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 Time - Seconds IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 0.1 1 10