SEMICONDUCTOR KDR732 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. E M B M DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + Fast reverse recovery time (trr max=10nS) D E 0.3+0.10/-0.05 _ 0.20 2.10 + Low switching noise. G H 0.65 0.15+0.1/-0.06 Low leakage current and high reliablility due to J K FEATURES D Ultrasmall-sized package permtting KDR732 H L C Highly reliable planar structure. N applied sets to be made small and slim. 3 1 G Low Forward Voltage : VF max=0.55V J A 2 K N 1.30 0.00-0.10 0.70 _ 0.10 0.42 + L M N 0.10 MIN 3 1. ANODE 1 2. ANODE 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC 3. CATHODE ) 2 SYMBOL RATING UNIT VRRM 30 V VRSM 35 V IO 70 mA Surge Forward Current IFSM 2 A Junction Temperature Tj 125 Tstg -55 125 Repetitive (Peak) Reverse Voltage Non-Repetitive (Peak) Reverse Surge Voltage Average Forward Current Storage Temperature Range 1 USM Marking UZ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=20 A 30 - - V Forward Voltage VF IF=70mA - - 0.55 V Reverse Current IR VR=15V - - 5 A Total Capacitance CT VR=10V, f=1MHz - 3.0 - pF Reverse Recovery Time trr IR=IF=10mA - - 10 nS 2003. 2. 25 Revision No : 2 1/2 KDR732 I R - VR I F - VF REVERSE CURRENT I R (µA) 50 30 Ta= 125 C Ta= 25 C FORWARD CURRENT I F (mA) 200 100 10 5 3 Ta=125 C 100 Ta=100 C 10 Ta=75 C Ta=50 C 1 Ta=25 C 0.1 1 0.01 0.5 0.2 0.6 0.4 0.8 1.0 5 10 15 20 25 30 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C - VR IS - t 20 f=1MHz 10 5 3 1 0.5 0 1 3 5 10 30 50 SURGE FORWARD CURRENT I S(peak) (A) 0 INTERTERMINAL CAPACITANCE C (pF) 1K 35 2.8 Current waveform 2.4 50Hz sine wave 1s 2.0 20ms t 1.6 1.2 0.8 0.4 0 0.01 0.03 0.1 REVERSE VOLTAGE VR (V) 0.3 1 3 TIME t (S) t rr TEST CIRCUIT 5V 2003. 2. 25 1mA 10mA 10µs 10mA 10Ω 100Ω 50Ω Duty < = 10% Revision No : 2 t rr 2/2