SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. K Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. L L R J M ) CHARACTERISTIC D SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEB0 7 V D N 1 Collector Current IC 5 A Base Current IB 0.5 A Collector Power Dissipation (Tc=25 ) PC 25 W Junction Temperature Tj 150 Tstg -55 150 N 2 H 3 M N P Q R S 0.5 Typ G H J K L 1. BASE Q MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S 2. COLLECTOR 3. EMITTER Storage Temperature Range TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE ~ = 3KΩ ~ = 300Ω EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=100V, IE=0 - - 1 mA V(BR)CEO IC=10mA, IB=0 100 - - V hFE(1) VCE=2V, IC=3A 2000 6000 15000 hFE(2) VCE=2V, IC=5A 500 - - Collector Cut-off Current Collector-Emitter Breakdown Voltage ) DC Current Gain Saturation Collector-Emitter VCE(sat) IC=3A, IB=3mA - 0.9 1.5 Voltage Base-Emitter VBE(sat) IC=3A, IB=3mA - 1.6 2.0 Turn-on Time ton 20µS - 1.0 - - 3.5 - - 1.2 - Switching Time V Storage Time Fall Time 2007. 5. 22 Revision No : 1 tstg tf INPUT I B1 I B1 I B2 OUTPUT 16.7Ω I B2 I B1 =-I B2 =3mA DUTY CYCLE 1% VCC =50V S 1/2 KTD1413 I C - V CE DC CURRENT GAIN h FE 4 A COMMON EMITTER Tc=25 C 0. 7m 1.0mA COLLECTOR CURRENT I C (A) 5 h FE - I C 0.5mA 3 0.4mA 2 0.35mA 1 10000 COMMON EMITTER 5000 VCE =2V 3000 I B =0.3mA 1000 500 300 100 50 30 10 0 0 1 2 3 4 0.01 5 0.03 0.1 COMMON EMITTER I C /I B=1000 10 5 3 1 0.5 0.3 0.03 0.1 3 0.3 0.5 1 5 10 100 50 30 COMMON EMITTER IC /I B =1000 10 5 3 1 0.5 0.3 0.1 0.01 COLLECTOR CURRENT I C (A) I C MAX. (PULSED) µS 0.1 0.05 0.03 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.01 1 3 5 10 VCEO MAX. S m 00 *10mS 1.0 0.5 0.3 00 30 50 100 300 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 5. 22 Revision No : 1 COLLECTOR POWER DISSIPATION PC (W) µS 00 S *3 1m * mS *3 W *1 COLLECTOR CURRENT I C (A) *P =1 0.03 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 10 5.0 3.0 3 5 10 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 0.1 0.01 1 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 100 50 30 0.3 P C - Ta 40 Tc=Ta INFINITE HEAT SINK 30 20 10 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) 2/2