SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.) K Complementary to KTD1413. L L R J M D CHARACTERISTIC D ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEB0 -5 V IC -5 DC Collector Current N 1 N 2 H 3 S 0.5 Typ G H J K L 1. BASE Q MAXIMUM RATING (Ta=25 M N P Q R MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S 2. COLLECTOR 3. EMITTER A Pules ICP -8 IB -0.12 A PC 30 W Tj 150 Tstg -55 150 TO-220IS Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT C B R2 R1 ∼ 8kΩ = ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ∼ 120Ω = E ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -1 mA Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -2 mA V(BR)CEO IC=-10mA, IB=0 -120 - - V hFE(1) VCE=-3V, IC=-0.5A 1000 - - hFE(2) VCE=-3V, IC=-3A 1000 - - VCE(sat) 1 IC=-3A, IB=-12mA - - -2 VCE(sat) 2 IC=-5A, IB=-20mA - - -4 Base-Emitter Voltage VBE VCE=-3V, IC=-3A - - -2.5 V Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 300 pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage 2007. 5. 21 Revision No : 2 V 1/2 KTB1423 h FE - I C V CE(sat) , V BE(sat), - I C 10k -3.5 5k SATURATION VOLTAGE VCE(sat) , V BE(sat) (V) DC CURRENT GAIN h FE VCE =-3V 3k 1k 500 300 100 -0.1 -0.3 -1 -3 I C /I B =250 -3.0 -2.5 -2.0 -1.5 VBE(sat) -1.0 VCE(sat) -0.5 -0.1 -10 -0.3 COLLECTOR CURRENT I C (A) -1 -10 -3 -20 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA C ob , C ib - V CB , V EB -20 500 300 100 C ib C ob 50 30 10 -0.1 -1 -0.3 -10 -3 -100 -30 100µS * -5 -3 I C MAX. DC OPERATION Tc=25 C -0.5 -0.3 -0.1 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.05 -0.03 -0.01 -1 -3 -10 10 2 3 1 0.3 -2 10 -1 10 0 10 PULSE WIDTH t w (S) 2007. 5. 21 COLLECTOR POWER DISSIPATION P C (W) TRANSIENT THERMAL RESISTANCE R th(t) ( C/W) 1 30 -3 -100 -300 Pc - Ta 1 Ta=25 C NO HEAT SINK 2 Tc=25 C INFINITE HEAT SINK 10 -30 COLLECTOR-EMITTER VOLTAGE VCE (V) R th(t) - t w 0.1 1mS * 10mS * (CONTINUOUS) -1 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 100 * VCEO MAX. f=1MHz COLLECTOR CURRENT I C (A) CAPACITANCE C ob(pF) , C ib(pF) I C MAX.(PULSED) -10 1k Revision No : 2 1 10 2 10 35 Tc=Ta INFINITE HEAT SINK 2 NO HEAT SINK 1 1 30 25 20 15 10 5 2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2