KEC KTB1423_07

SEMICONDUCTOR
KTB1423
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
A
C
P
FEATURES
B
E
G
High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A.
High Collector Breakdown Voltage : VCEO=-120V (Min.)
K
Complementary to KTD1413.
L
L
R
J
M
D
CHARACTERISTIC
D
)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEB0
-5
V
IC
-5
DC
Collector Current
N
1
N
2
H
3
S
0.5 Typ
G
H
J
K
L
1. BASE
Q
MAXIMUM RATING (Ta=25
M
N
P
Q
R
MILLIMETERS
_ 0.3
10.0 +
_ 0.3
15.0 +
_ 0.3
2.70 +
0.76+0.09/-0.05
_ 0.2
Φ3.2 +
_ 0.3
3.0 +
_ 0.3
12.0 +
0.5+0.1/-0.05
_ 0.5
13.6 +
_ 0.2
3.7 +
1.2+0.25/-0.1
1.5+0.25/-0.1
_ 0.1
2.54 +
_ 0.1
6.8 +
_ 0.2
4.5 +
_ 0.2
2.6 +
DIM
A
B
C
D
E
F
F
S
2. COLLECTOR
3. EMITTER
A
Pules
ICP
-8
IB
-0.12
A
PC
30
W
Tj
150
Tstg
-55 150
TO-220IS
Base Current
Collector Power Dissipation
(Tc=25
)
Junction Temperature
Storage Temperature Range
EQUIVALENT CIRCUIT
C
B
R2
R1
∼ 8kΩ
=
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
∼ 120Ω
=
E
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-100V, IE=0
-
-
-1
mA
Emitter Cut-off Current
IEBO
VBE=-5V, IC=0
-
-
-2
mA
V(BR)CEO
IC=-10mA, IB=0
-120
-
-
V
hFE(1)
VCE=-3V, IC=-0.5A
1000
-
-
hFE(2)
VCE=-3V, IC=-3A
1000
-
-
VCE(sat) 1
IC=-3A, IB=-12mA
-
-
-2
VCE(sat) 2
IC=-5A, IB=-20mA
-
-
-4
Base-Emitter Voltage
VBE
VCE=-3V, IC=-3A
-
-
-2.5
V
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
-
300
pF
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
2007. 5. 21
Revision No : 2
V
1/2
KTB1423
h FE - I C
V CE(sat) , V BE(sat), - I C
10k
-3.5
5k
SATURATION VOLTAGE
VCE(sat) , V BE(sat) (V)
DC CURRENT GAIN h FE
VCE =-3V
3k
1k
500
300
100
-0.1
-0.3
-1
-3
I C /I B =250
-3.0
-2.5
-2.0
-1.5
VBE(sat)
-1.0
VCE(sat)
-0.5
-0.1
-10
-0.3
COLLECTOR CURRENT I C (A)
-1
-10
-3
-20
COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
C ob , C ib - V CB , V EB
-20
500
300
100
C ib
C ob
50
30
10
-0.1
-1
-0.3
-10
-3
-100
-30
100µS *
-5
-3
I C MAX.
DC OPERATION
Tc=25 C
-0.5
-0.3
-0.1
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
-0.05
-0.03
-0.01
-1
-3
-10
10
2
3
1
0.3
-2
10
-1
10
0
10
PULSE WIDTH t w (S)
2007. 5. 21
COLLECTOR POWER DISSIPATION
P C (W)
TRANSIENT THERMAL RESISTANCE
R th(t) ( C/W)
1
30
-3
-100
-300
Pc - Ta
1 Ta=25 C NO HEAT SINK
2 Tc=25 C INFINITE HEAT SINK
10
-30
COLLECTOR-EMITTER VOLTAGE VCE (V)
R th(t) - t w
0.1
1mS *
10mS *
(CONTINUOUS)
-1
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
100
*
VCEO MAX.
f=1MHz
COLLECTOR CURRENT I C (A)
CAPACITANCE C ob(pF) , C ib(pF)
I C MAX.(PULSED)
-10
1k
Revision No : 2
1
10
2
10
35
Tc=Ta
INFINITE HEAT SINK
2 NO HEAT SINK
1
1
30
25
20
15
10
5
2
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2/2