SEMICONDUCTOR KTD1414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. K L L ) R M J MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 4 A Base Current IB 0.5 A Collector Power Dissipation (Tc=25 ) PC 25 W Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range D D N 1 N 2 H 3 M N P Q R S 0.5 Typ G H J K L 1. BASE Q CHARACTERISTIC MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S 2. COLLECTOR 3. EMITTER TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE _ 300Ω ~ _ 4.5KΩ ~ EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 20 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2.5 mA V(BR)CEO IC=10mA, IB=0 80 - - V hFE(1) VCE=2V, IC=1A 2000 - - hFE(2) VCE=2V, IC=3A 1000 - - Collector-Emitter VCE(sat) IC=3A, IB=6mA - - 1.5 Base-Emitter VBE(sat) IC=3A, IB=6mA - - 2.0 Turn-on Time ton - 0.2 - Storage Time tstg - 1.5 - - 0.6 - Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage Switching Time V Fall Time 2007. 5. 22 Revision No : 2 tf 20µsec INPUT I B1 I B1 0 I B2 OUTPUT 10Ω I B2 I B1 =-I B2 =6mA DUTY CYCLE 1% VCC =30V S 1/2 KTD1414 I C - V CE I C - V CE 4 COLLECTOR CURRENT I C (A) COMMON EMITTER 500 450 400 Tc=25 C 3 350 2 300 250 1 I B =200µA 0 0 0 1 2 3 4 Tc=100 C 3 300 250 2 200 175 1 150 I B =125µA 0 0 5 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V CE VCE(sat) - I C 4 COLLECTOR CURRENT I C (A) COMMON EMITTER COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT I C (A) 4 COMMON EMITTER Tc=-55 C 3 800 700 2 600 500 1 I B =400µA 3 Tc=100 C 1 Tc=25 C Tc=-55 C 0.5 COMMON EMITTER IC /I B =500 0.3 0.5 0.2 1 3 5 0 0 0 1 2 3 4 COLLECTOR CURRENT I C (A) 5 COLLECTOR-EMITTER VOLTAGE V CE (V) SAFE OPERATING AREA 10 I C MAX.(PULSED) 5k 3k C 0 10 = Tc C 5 =2 Tc 5 C 5 =- Tc 1k 500 300 0.1 1 0.5 0.3 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 COMMON EMITTER VCE =2V 0.05 0.3 0.5 1 3 COLLECTOR CURRENT I C (A) 2007. 5. 22 I C MAX. (CONTINUOUS) 3 VCEO MAX. DC CURRENT GAIN h FE 10k * 5 S * 1m N S * IO AT 10m ER C OP =25 DC Tc COLLECTOR CURRENT I C (A) h FE - I C Revision No : 2 5 10 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/2