TI TPS5410MDREP

TPS5410-EP
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1-A WIDE INPUT RANGE STEP-DOWN SWIFT™ CONVERTER
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FEATURES
APPLICATIONS
•
•
•
•
•
•
1
2
•
•
•
•
•
•
•
•
•
Wide Input Voltage Range: 5.5 V to 36 V
Up to 1-A Continuous (1.2-A Peak) Output
Current
High Efficiency up to 95% Enabled by 110-mΩ
Integrated MOSFET Switch
Wide Output Voltage Range: Adjustable Down
to 1.22 V with 1.5% Initial Accuracy
Internal Compensation Minimizes External
Parts Count
Fixed 500-kHz Switching Frequency for Small
Filter Size
Improved Line Regulation and Transient
Response by Input Voltage Feed Forward
System Protected by Over Current Limiting,
Over Voltage Protection and Thermal
Shutdown
–55°C to 125°C Operating Junction
Temperature Range
Available in Small 8-Pin SOIC Package
For SWIFT Documentation, Application Notes
and Design Software, See the TI Website at
www.ti.com/swift
SUPPORTS DEFENSE, AEROSPACE,
AND MEDICAL APPLICATIONS
•
•
•
•
•
•
•
(1)
Controlled Baseline
One Assembly/Test Site
One Fabrication Site
Available in Military (–55°C/125°C)
Temperature Range (1)
Extended Product Life Cycle
Extended Product-Change Notification
Product Traceability
Consumer: Set-top Box, DVD, LCD Displays
Industrial and Car Audio Power Supplies
Battery Chargers, High Power LED Supply
12-V/24-V Distributed Power Systems
DESCRIPTION
As a member of the SWIFT™ family of DC/DC
regulators, the TPS5410 is a high-output-current
PWM converter that integrates a low resistance high
side N-channel MOSFET. Included on the substrate
with the listed features is a high performance voltage
error amplifier that provides tight voltage regulation
accuracy
under
transient
conditions;
an
undervoltage-lockout circuit to prevent start-up until
the input voltage reaches 5.5 V; an internally set
slow-start circuit to limit inrush currents; and a voltage
feed-forward circuit to improve the transient
response. Using the ENA pin, shutdown supply
current is reduced to 18 μA typically. Other features
include an active high enable, overcurrent limiting,
overvoltage protection and thermal shutdown. To
reduce design complexity and external component
count, the TPS5410 feedback loop is internally
compensated.
The TPS5410 device is available in an easy to use
8-pin SOIC package. TI provides evaluation modules
and software tools to aid in quickly achieving
high-performance power supply designs to meet
aggressive equipment development cycles.
Additional temperature ranges are available - contact factory
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SWIFT is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS5410-EP
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Efficiency vs Output Current
Simplified Schematic
100
VIN
VIN
VOUT
PH
TPS5410
95
Efficiency − %
BOOT
NC
NC
ENA VSENSE
90
85
VI = 20 V
VO = 12 V
fs = 500 kHz
o
TA = 25 C
GND
80
75
0
0.2
0.4 0.6 0.8
1
1.2
IO - Output Current - A
1.4
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
(1)
TJ
INPUT VOLTAGE
OUTPUT VOLTAGE
PACKAGE
–55°C to 125°C
5.5 V to 36 V
Adjustable to 1.22 V
SOIC (D)
(1)
PART NUMBER
TPS5410MDREP
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1) (2)
VALUE
BOOT
–0.3 to 50
PH (steady-state)
VI
Input voltage range
UNIT
–0.3 to 40 (3)
VIN
–0.6 to 40 (3)
EN
–0.3 to 7
VSENSE
–0.3 to 3
BOOT-PH
V
10
PH (transient < 10 ns)
–1.2
IO
Source current
PH
Ilkg
Leakage current
PH
10
μA
TJ
Operating virtual junction temperature range
–55 to 150
°C
Tstg
Storage temperature
–65 to 150
°C
(1)
(2)
(3)
2
Internally Limited
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
Approaching the absolute maximum rating for the VIN pin may cause the voltage on the PH pin to exceed the absolute maximum rating.
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DISSIPATION RATINGS (1)
(2)
THERMAL IMPEDANCE
JUNCTION-TO-AMBIENT
PACKAGE
8 Pin D
(1)
(2)
(3)
(3)
75°C/W
Maximum power dissipation may be limited by overcurrent protection.
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 125°C. This is the point where
distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or
below 125°C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more
information.
Test board conditions:
(a) 3 in x 3 in, 2 layers, thickness: 0.062 inch.
(b) 2 oz. copper traces located on the top and bottom of the PCB.
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
VI
Input voltage range, VIN
5.5
36
V
TJ
Operating junction temperature
–55
125
°C
TYP
MAX
UNIT
3
4.4
mA
18
50
μA
ELECTRICAL CHARACTERISTICS
TJ = –55°C to 125°C, VIN = 5.5 V to 36 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
SUPPLY VOLTAGE (VIN PIN)
IQ
Quiescent current
VSENSE = 2 V, Not switching, PH pin
open
Shutdown, ENA = 0 V
UNDERVOLTAGE LOCK OUT (UVLO)
Start threshold voltage, UVLO
5.3
V
Hysteresis voltage, UVLO
330
mV
VOLTAGE REFERENCE
Voltage reference accuracy
TJ = 25°C
1.202
1.221
1.239
IO = 0 A – 1 A
1.192
1.221
1.245
TJ = 25°C
400
500
600
TJ = Full range
380
V
OSCILLATOR
Internally set free-running frequency
Minimum controllable on time
600
150
Maximum duty cycle
87%
kHz
210
ns
1.3
V
89%
ENABLE (ENA PIN)
Start threshold voltage, ENA
Stop threshold voltage, ENA
0.5
Hysteresis voltage, ENA
V
450
Internal slow-start time (0 ~ 100%)
mV
5.35
8
10
1.2
1.5
1.8
ms
CURRENT LIMIT
Current limit
TJ = 25°C
TJ = Full range
Current limit hiccup time
0.45
4.6
22.5
A
13
16
ms
135
162
°C
14
°C
THERMAL SHUTDOWN
Thermal shutdown trip point
Thermal shutdown hysteresis
OUTPUT MOSFET
rDS(on)
High side power MOSFET switch
VIN = 5.5 V
150
VIN = 10 V - 36 V
110
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PIN ASSIGNMENTS
D PACKAGE
(TOP VIEW)
BOOT
1
8
PH
NC
2
7
VIN
NC
3
6
GND
VSENSE
4
5
ENA
TERMINAL FUNCTIONS
TERMINAL
NAME
DESCRIPTION
NO.
BOOT
1
NC
2, 3
Boost capacitor for the high-side FET gate driver. Connect 0.01 μF low ESR capacitor from BOOT pin to PH pin.
Not connected internally.
VSENSE
4
Feedback voltage for the regulator. Connect to output voltage divider.
ENA
5
On/off control. Below 0.5 V, the device stops switching. Float the pin to enable.
GND
6
Ground.
VIN
7
Input supply voltage. Bypass VIN pin to GND pin close to device package with a high quality, low ESR ceramic
capacitor.
PH
8
Source of the high side power MOSFET. Connected to external inductor and diode.
4
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TYPICAL CHARACTERISTICS
OSCILLATOR FREQUENCY
vs
JUNCTION TEMPERATURE
OPERATING QUIESCENT CURRENT
vs
JUNCTION TEMPERATURE
530
f − Oscillator Frequency − kHz
510
500
490
480
470
460
-50
180
VI = 12 V
170
Minimum Controllable On Time − ns
IQ − Operating Quiescent Current − mA
3.5
520
3.25
3
2.75
2.5
-25
0
50
25
75
100
-50
125
-25
0
25
50
75
100
160
150
140
130
120
-50
125
-25
0
50
25
o
TJ − Junction Temperature − C
o
TJ − Junction Temperature − C
75
100
Figure 2.
Figure 3.
VOLTAGE REFERENCE
vs
JUNCTION TEMPERATURE
ON STATE RESISTANCE
vs
JUNCTION TEMPERATURE
INTERNAL SLOW START TIME
vs
JUNCTION TEMPERATURE
180
9
VI = 12 V
1.22
1.215
tSS − Internal Slow Start Time − ms
rDS(on) − On-State Resistance − mW
170
1.225
125
o
TJ − Junction Temperature − C
Figure 1.
1.23
Vref − Voltage Reference − V
MINIMUM CONTROLLABLE ON TIME
vs
JUNCTION TEMPERATURE
160
150
140
130
120
110
100
8.5
8
7.5
90
1.21
-50
-25
0
50
25
75
100
125
80
-50
-25
o
TJ − Junction Temperature − C
0
25
50
75
-50
-25
0
50
25
75
100
125
o
TJ − Junction Temperature − C
Figure 5.
Figure 6.
SHUTDOWN QUIESCENT CURRENT
vs
INPUT VOLTAGE
MINIMUM CONTROLLABLE DUTY RATIO
vs
JUNCTION TEMPERATURE
8
ENA = 0 V
o
TJ = 125 C
20
Minimum Duty Ratio − %
ISD − Shutdown Current − mA
7
125
TJ − Junction Temperature − C
Figure 4.
25
100
o
TJ = 27oC
15
10
7.5
7.5
7.25
o
TJ = -40 C
5
7
0
5
10
15
20
25
30
35
40
-50
VI − Input Voltage − V
-25
0
25
50
75
100
125
o
TJ − Junction Temperature − C
Figure 7.
Figure 8.
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APPLICATION INFORMATION
FUNCTIONAL BLOCK DIAGRAM
VIN
VIN
1.221 V Bandgap
Reference
UVLO
VREF
SHDN
Slow Start
Boot
Regulator
BOOT
HICCUP
5 µA
ENABLE
ENA
SHDN
SHDN
VSENSE
Z1
Thermal
Protection
NC
SHDN
VIN
Ramp
Generator
NC
SHDN
VSENSE
PWM
Comparator
HICCUP
Overcurrent
Protection
Oscillator
OVP
Z2
Feed Forward
Gain = 25
SHDN
GND
Error
Amplifier
SHDN
SHDN
Gate Drive
Control
112.5% VREF
Gate
Driver
SHDN
BOOT
PH
VOUT
DETAILED DESCRIPTION
Oscillator Frequency
The internal free running oscillator sets the PWM switching frequency at 500 kHz. The 500-kHz switching
frequency allows less output inductance for the same output ripple requirement resulting in a smaller output
inductor.
Voltage Reference
The voltage reference system produces a precision reference signal by scaling the output of a temperature
stable bandgap circuit. The bandgap and scaling circuits are trimmed during production testing to an output of
1.221 V at room temperature.
Enable (ENA) and Internal Slow Start
The ENA pin provides electrical on/off control of the regulator. Once the ENA pin voltage exceeds the threshold
voltage, the regulator starts operation and the internal slow start begins to ramp. If the ENA pin voltage is pulled
below the threshold voltage, the regulator stops switching and the internal slow start resets. Connecting the pin
to ground or to any voltage less than 0.5 V disables the regulator and activate the shutdown mode. The
quiescent current of the TPS5410 in shutdown mode is typically 18 μA.
6
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The ENA pin has an internal pullup current source, allowing the user to float the ENA pin. If an application
requires controlling the ENA pin, use open drain or open collector output logic to interface with the pin. To limit
the start-up inrush current, an internal slow start circuit is used to ramp up the reference voltage from 0 V to its
final value linearly. The internal slow start time is 8 ms typically.
Undervoltage Lockout (UVLO)
The TPS5410 incorporates an undervoltage lockout circuit to keep the device disabled when VIN (the input
voltage) is below the UVLO start voltage threshold. During power up, internal circuits are held inactive and the
internal slow start is grouded until VIN exceeds the UVLO start threshold voltage. Once the UVLO start threshold
voltage is reached, the internal slow start is released and device start-up begins. The device operates until VIN
falls below the UVLO stop threshold voltage. The typical hysteresis in the UVLO comparator is 330 mV.
Boost Capacitor (BOOT)
Connect a 0.01-μF low-ESR ceramic capacitor between the BOOT pin and PH pin. This capacitor provides the
gate drive voltage for the high-side MOSFET. X7R or X5R grade dielectrics are recommended due to their stable
values over temperature.
Output Feedback (VSENSE)
The output voltage of the regulator is set by feeding back the center point voltage of an external resistor divider
network to the VSENSE pin. In steady-state operation, the VSENSE pin voltage should be equal to the voltage
reference 1.221 V.
Internal Compensation
The TPS5410 implements internal compensation to simplify the regulator design. Since the TPS5410 uses
voltage mode control, a type 3 compensation network has been designed on chip to provide a high crossover
frequency and a high phase margin for good stability. See the Internal Compensation Network in the applications
section for more details.
Voltage Feed Forward
The internal voltage feed forward provides a constant DC power stage gain despite any variations with the input
voltage. This greatly simplifies the stability analysis and improves the transient response. Voltage feed forward
varies the peak ramp voltage inversely with the input voltage so that the modulator and power stage gain are
constant at the feed forward gain, i.e.
VIN
Feed Forward Gain =
Ramppk-pk
(1)
The typical feed forward gain of TPS5410 is 25.
Pulse-Width-Modulation (PWM) Control
The regulator employs a fixed frequency pulse-width-modulator (PWM) control method. First, the feedback
voltage (VSENSE pin voltage) is compared to the constant voltage reference by the high gain error amplifier and
compensation network to produce a error voltage. Then, the error voltage is compared to the ramp voltage by the
PWM comparator. In this way, the error voltage magnitude is converted to a pulse width which is the duty cycle.
Finally, the PWM output is fed into the gate drive circuit to control the on-time of the high-side MOSFET.
Overcurrent Liming
Overcurrent limiting is implemented by sensing the drain-to-source voltage across the high-side MOSFET. The
drain to source voltage is then compared to a voltage level representing the overcurrent threshold limit. If the
drain-to-source voltage exceeds the overcurrent threshold limit, the overcurrent indicator is set true. The system
will ignore the overcurrent indicator for the leading edge blanking time at the beginning of each cycle to avoid any
turn-on noise glitches.
Once overcurrent indicator is set true, overcurrent limiting is triggered. The high-side MOSFET is turned off for
the rest of the cycle after a propagation delay. The overcurrent limiting scheme is called cycle-by-cycle current
limiting.
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Sometimes under serious overload conditions such as short-circuit, the overcurrent runaway may still happen
when using cycle-by-cycle current limiting. A second mode of current limiting is used, i.e. hiccup mode
overcurrent limiting. During hiccup mode overcurrent limiting, the voltage reference is grounded and the high-side
MOSFET is turned off for the hiccup time. Once the hiccup time duration is complete, the regulator restarts under
control of the slow start circuit.
Overvoltage Protection
The TPS5410 has an overvoltage protection (OVP) circuit to minimize voltage overshoot when recovering from
output fault conditions. The OVP circuit includes an overvoltage comparator to compare the VSENSE pin voltage
and a threshold of 112.5% x VREF. Once the VSENSE pin voltage is higher than the threshold, the high-side
MOSFET will be forced off. When the VSENSE pin voltage drops lower than the threshold, the high-side
MOSFET will be enabled again.
Thermal Shutdown
The TPS5410 protects itself from overheating with an internal thermal shutdown circuit. If the junction
temperature exceeds the thermal shutdown trip point, the voltage reference is grounded and the high-side
MOSFET is turned off. The part is restarted under control of the slow start circuit automatically when the junction
temperature drops 14°C below the thermal shutdown trip point.
PCB Layout
Connect a low ESR ceramic bypass capacitor to the VIN pin. Care should be taken to minimize the loop area
formed by the bypass capacitor connections, the VIN pin, and the TPS5410 ground pin. The best way to do this
is to extend the top side ground area from under the device adjacent to the VIN trace, and place the bypass
capacitor as close as possible to the VIN pin. The minimum recommended bypass capacitance is 4.7 μF ceramic
with a X5R or X7R dielectric.
There should be a ground area on the top layer directly underneath the IC to connect the GND pin of the device
and the anode of the catch diode. The GND pin should be tied to the PCB ground by connecting it to the ground
area under the device as shown in Figure 9.
The PH pin should be routed to the output inductor, catch diode and boot capacitor. Since the PH connection is
the switching node, the inductor should be located close to the PH pin, and the area of the PCB conductor
minimized to prevent excessive capacitive coupling. The catch diode should also be placed close to the device to
minimize the output current loop area. Connect the boot capacitor between the phase node and the BOOT pin as
shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. The component
placements and connections shown work well, but other connection routings may also be effective.
Connect the output filter capacitor(s) as shown between the VOUT trace and GND. It is important to keep the
loop formed by the PH pin, Lout, Cout and GND as small as is practical.
Connect the VOUT trace to the VSENSE pin using the resistor divider network to set the output voltage. Do not
route this trace too close to the PH trace. Due to the size of the IC package and the device pinout, the trace may
need to be routed under the output capacitor. The routing may be done on an alternate layer if a trace under the
output capacitor is not desired.
If the grounding scheme shown is used via a connection to a different layer to route to the ENA pin.
8
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PH
BOOT
CAPACITOR
OUTPUT
INDUCTOR
RESISTOR
DIVIDER
VOUT
BOOT
PH
NC
VIN
NC
GND
VSENSE
ENA
OUTPUT
FILTER
CAPACITOR
Route feedback
trace under the output
filter capacitor or on
the other layer.
CATCH
DIODE
INPUT
INPUT
BULK
BYPASS
CAPACITOR FILTER
Vin
TOPSIDE GROUND AREA
VIA to Ground Plane
Signal VIA
Figure 9. Design Layout
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0.026
0.220
0.080
All dimensions in inches
Figure 10. TPS5410 Land Pattern
Application Circuits
Figure 11 shows the schematic for a typical TPS5410 application. The TPS5410 can provide up to 1-A output
current at a nominal output voltage of 12 V.
U1
TPS5410D
14.5 V - 36 V
7
VIN
ENA
C1
4.7 mF
VIN
5 ENA
2 NC
3 NC
6 GND
BOOT
L1
68 mH
C2
0.01 mF
12 V
1
VOUT
PH 8
VSNS 4
+
D1
B340A
C3
47 mF
(See Note A)
R1
10 kW
R2
1.13 kW
A.
C3 = Tantalum AVX TPSE476M020R0150
Figure 11. Application Circuit, 14.5-V — 36 V to 12-V
10
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Design Procedure
The following design procedure can be used to select component values for the TPS5410. Alternately, see the TI
Web site at www.ti.com/swift for any available software tools to aid in the design process. This section presents a
simplified discussion of the design process.
To
•
•
•
•
•
•
begin the design process, a few parameters must be determined. The designer must know the following:
Input voltage range
Output voltage
Input ripple voltage
Output ripple voltage
Output current rating
Operating frequency
Design Parameters
For this design example, use the following as the input parameters:
DESIGN PARAMETER
(1)
EXAMPLE VALUE
Input voltage range
(1)
14.5 V to 36 V
Output voltage
12 V
Input ripple voltage
300 mV
Output ripple voltage
50 mV
Output current rating
1A
Operating frequency
500 kHz
As an additional constraint, the design is set up to be small size and low component height.
Switching Frequency
The switching frequency for the TPS5410 is internally set to 500 kHz. It is not possible to adjust the switching
frequency.
Input Capacitors
The TPS5410 requires an input decoupling capacitor and, depending on the application, a bulk input capacitor.
The minimum recommended value for the decoupling capacitor is 4.7 μF. A high quality ceramic type X5R or
X7R is required. For some applications, a smaller value decoupling capacitor may be used, if the input voltage
and current ripple ratings are not exceeded. The voltage rating must be greater than the maximum input voltage,
including ripple. For this design, a 4.7-μF capacitor, C1 issued to allow for smaller 1812 case size to be used
while maintaining a 50 V rating.
This input ripple voltage can be approximated by Equation 2 :
IOUT(MAX) x 0.25
+ IOUT(MAX) x ESRMAX
DVIN =
CBULK x ƒSW
(
)
(2)
Where IOUT(MAX) is the maximum load current, f SW is the switching frequency, CI is the input capacitor value and
ESRMAX is the maximum series resistance of the input capacitor.
The maximum RMS ripple current also needs to be checked. For worst case conditions, this is approximated by
Equation 3:
I
OUT(MAX)
I
+
CIN
2
(3)
In this example, the calculated input ripple voltage is 137 mV, and the RMS ripple current is 0.5 A. The maximum
voltage across the input capacitors would be VIN max plus delta VIN/2. The chosen input decoupling capacitors
are rated for 50 V, and the ripple current capacity for each is 3 A at 500 kHz, providing ample margin. The actual
measured input ripple voltage may be larger than the calculated value due to the output impedance of the input
voltage source, decrease in actual capacitance due to bias voltage and parasitics associated with the layout.
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The maximum ratings for voltage and current are not to be exceeded under any
circumstance.
Additionally, some bulk capacitance may be needed, especially if the TPS5410 circuit is not located within
approximately 2 inches from the input voltage source. The value for this capacitor is not critical but it should be
rated to handle the maximum input voltage including ripple voltage and should filter the output so that input ripple
voltage is acceptable.
Output Filter Components
Two components need to be selected for the output filter, L1 and C3. Since the TPS5410 is an internally
compensated device, a limited range of filter component types and values can be supported.
Inductor Selection
To calculate the minimum value of the output inductor, use Equation 4:
LMIN =
(
VOUT x VIN(MAX) - VOUT
)
VIN(max) x KIND x IOUT x FSW x 0.8
(4)
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
Three things need to be considered when determining the amount of ripple current in the inductor: the peak to
peak ripple current affects the output ripple voltage amplitude, the ripple current affects the peak switch current,
and the amount of ripple current determines at what point the circuit becomes discontinuous. For designs using
the TPS5410, KIND of 0.2 to 0.3 yields good results. Low output ripple voltages is obtained when paired with the
proper output capacitor, the peak switch current is below the current limit set point, and low load currents can be
sourced before discontinuous operation.
For this design example, use KIND = 0.3, and the minimum inductor value is 66 μH. The next highest standard
value used in this design is 68 μH.
For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded.
The RMS inductor current can be found from Equation 5:
I
L(RMS)
+
Ǹ
I2
1
)
OUT(MAX) 12
ǒ
V
V
OUT
ǒVIN(MAX) * VOUTǓ
L
IN(MAX)
OUT
F
SW
0.8
Ǔ
2
(5)
and the peak inductor current can be determined using Equation 6:
(
)
VOUT x VIN(MAX) - VOUT
IL(PK) = IOUT(MAX) +
1.6 x VIN(MAX) x LOUT x FSW
(6)
For this design, the RMS inductor current is 1.004 A, and the peak inductor current is 1.147 A. The chosen
inductor is a Coilcraft MSS1260-683 type. The nominal inductance is 68 μH. It has a saturation current rating of
2.3 A and a RMS current rating of 2.3 A, which meets the requirements. Inductor values for use with the
TPS5410 are in the range of 10 μH to 100 μH.
Capacitor Selection
The important design factors for the output capacitor are dc voltage rating, ripple current rating, and equivalent
series resistance (ESR). The dc voltage and ripple current ratings cannot be exceeded. The ESR is important
because along with the inductor ripple current it determines the amount of output ripple voltage. The actual value
of the output capacitor is not critical, but some practical limits do exist. Consider the relationship between the
desired closed loop crossover frequency of the design and LC corner frequency of the output filter. Due to the
design of the internal compensation, it is recommended to keep the closed loop crossover frequency in the range
3 kHz to 30 kHz as this frequency range has adequate phase boost to allow for stable operation. For this design
example, the intended closed loop crossover frequency is between 2590 Hz and 24 kHz, and below the ESR
zero of the output capacitor. Under these conditions, the closed loop crossover frequency is related to the LC
corner frequency as:
12
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f CO +
f LC
2
85 VOUT
(7)
and the desired output capacitor value for the output filter to:
1
C OUT +
3357 L OUT f CO V OUT
(8)
For a desired crossover of 10 kHz and a 68-μH inductor, the calculated value for the output capacitor is 36.5 μF.
The capacitor type should be chosen so that the ESR zero is above the loop crossover. The maximum ESR is:
1
ESR MAX +
2p C OUT f CO
(9)
The maximum ESR of the output capacitor also determines the amount of output ripple as specified in the initial
design parameters. The output ripple voltage is the inductor ripple current times the ESR of the output filter.
Check that the maximum specified ESR as listed in the capacitor data sheet results in an acceptable output
ripple voltage:
VPP(MAX) =
(
)
ESRMAX x VOUT x VIN(MAX) - VOUT
NC x VIN(MAX) x LOUT x FSW x 0.8
(10)
Where:
ΔVPP is the desired peak-to-peak output ripple.
NC is the number of parallel output capacitors.
FSW is the switching frequency.
The minimum ESR of the output capacitor should also be considered. For a good phase margin, if the ESR is
zero when the ESR is at its minimum, it should not be above the internal compensation poles at 24 kHz and
54 kHz.
The selected output capacitor must also be rated for a voltage greater than the desired output voltage plus one
half the ripple voltage. Any derating amount must also be included. The maximum RMS ripple current in the
output capacitor is given by Equation 11:
ICOUT(RMS) =
1
Ö12
x
[
(
VOUT x VIN(MAX) - VOUT
)
VIN(MAX) x LOUT - FSW x 0.8 x NC
]
(11)
Where:
NC is the number of output capacitors in parallel.
FSW is the switching frequency.
For this design example, a single 47-μF output capacitor is chosen for C3. This value is close to the calculated
value of 36.5 μF and yields an actual closed loop cross over frequency of 10.05 kHz. The calculated RMS ripple
current is 84.9 mA and the maximum ESR required is 339 mΩ. A capacitor that meets these requirements is a
AVX TPSE476M020R0150, rated at 20 V with a maximum ESR of 150 mΩ and a ripple current rating of 1.369 A.
This capacitor results in a peak-to-peak output ripple of 44 mV using equation 10. An additional small 0.1-μF
ceramic bypass capacitor may also used, but is not included in this design.
Other capacitor types can be used with the TPS5410, depending on the needs of the application.
Output Voltage Setpoint
The output voltage of the TPS5410 is set by a resistor divider (R1 and R2) from the output to the VSENSE pin.
Calculate the R2 resistor value for the output voltage of 12 V using Equation 12:
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R2 +
R1
V
OUT
1.221
* 1.221
(12)
For any TPS5410 design, start with an R1 value of 10 kΩ. R2 is then 1.13 kΩ.
Boot Capacitor
The boot capacitor should be 0.01 μF.
Catch Diode
The TPS5410 is designed to operate using an external catch diode between PH and GND. The selected diode
must meet the absolute maximum ratings for the application: Reverse voltage must be higher than the maximum
voltage at the PH pin, which is VINMAX + 0.5 V. Peak current must be greater than IOUTMAX plus on half the
peak-to-peak inductor current. Forward voltage drop should be small for higher efficiencies. It is important to note
that the catch diode conduction time is typically longer than the high-side FET on time; therefore, the diode
parameters improve the overall efficiency. Additionally, check that the device chosen is capable of dissipating the
power losses. For this design, a Diodes, Inc. B340A is chosen, with a reverse voltage of 40 V, forward current of
3 A, and a forward voltage drop of 0.5 V.
Additional Circuits
Figure 12 shows an application circuit using all ceramic capacitors for the input and output filters. The design
procedure is similar to those given for the design example, except for the selection of the output filter capacitor
values and the design of the additional compensation components required to stabilize the circuit.
U1
TPS5410D
7 V - 36 V
VIN
7
ENA
C1
4.7 mF
C2
0.01 mF
VIN
5 ENA
2 NC
3 NC
6 GND
BOOT
L1
68 mH
5V
1
VOUT
PH 8
VSNS 4
D1
B340A
C3
47 mF
C4
47 mF
(Note A)
(Note A)
R1
10 kW
C6
2700 pF
R3
1.78 kW
C5
150 pF
A.
R2
3.24 kW
C7
0.056 mF
C3, C4 = Ceramic TDKC4532X5R1A476MT
Figure 12. 7-V — 36-V Input to 5-V Output Application Circuit with Ceramic Capacitors
Output Filter Capacitor Selection
When using ceramic output filer capacitors, the recommended LC resonant frequency should be no more than 7
kHz. Since the output inductor is already selected at 68 μH, this limits the minimum output capacitor value to:
1
CO (MIN) ³
2
(2p x 7000) x LO
(13)
The minimum capacitor value is calculated to be 7.6 μF. For this circuit a larger value of capacitor will yield better
transient response. Two output capacitors are used for C3 and C4 with a value of 47 uF each. It is important to
note that the actual capacitance of ceramic capacitors decreases with applied voltage. In this case the effective
value used for the calculations is approximately 70 % of the rated value or 70 μF.
14
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External Compensation Network
When using ceramic output capacitors, additional circuitry is required to stabilize the closed loop system. For this
circuit the external components are R3, C5, C6 and C7. To determine the value of these components, first
calculate the LC resonant frequency of the output filter:
1
FLC =
2p Ö LO x CO (EFF)
(14)
For this example the effective resonant frequency is calculated as 2306 Hz
The network composed of R1, R2, R3, C5, C6 and C7 has two poles and two zeros that are used to tailor the
overall response of the feedback network to accommodate the use of the ceramic output capacitors. The pole
and zero locations are given by the following equations:
VO
Fp1 = 500000 x
FLC
(15)
Fz1 = 0.7 x FLC
(16)
Fz2 = 2.5 x FLC
(17)
The final pole is located at a frequency too high to be of concern. The values for R1 and R2 are fixed by the 5-V
output voltage as calculated using Equation 12. Now the values of R3, C5, C6 and C7 are determined using
Equation 18, Equation 19, and Equation 20:
1
C7 =
2p x Fp1 x (R1 || R2)
(18)
1
2p x Fz1 x C7
1
C6 =
2p x Fz2 x R1
R3 =
(19)
(20)
For this design, using the closest standard values, C7 is 0.056 μF, R3 is 1.76 kΩ and C6 is 2700 pF. C5 is
added to improve load regulation performance. It is effectively in parallel with C6 in the location of the second
pole frequency, so it should be small in relationship to C6. C5 should be less the 1/10 the value of C6. For this
example, 150 pF works well.
For additional information on external compensation of the TPS5410 or other wide voltage range SWIFT devices,
see SLVA237 Using TPS5410/20/30/31 With Aluminum/Ceramic Output Capacitors.
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ADVANCED INFORMATION
Output Voltage Limitations
Due to the internal design of the TPS5410, there are both upper and lower output voltage limits for any given
input voltage. The upper limit of the output voltage set point is constrained by the maximum duty cycle of 87%
and is given by:
V OUTMAX + 0.87
ǒǒVINMIN * I OMAX
Ǔ
Ǔ ǒ
0.230 ) VD * I OMAX
Ǔ
RL * VD
(21)
Where:
VINMIN = minimum input voltage
IOMAX = maximum load current
VD = catch diode forward voltage.
RL= output inductor series resistance.
This equation assumes maximum on resistance for the internal high side FET.
The lower limit is constrained by the minimum controllable on time which may be as high as 200 ns. The
approximate minimum output voltage for a given input voltage and minimum load current is given by:
V OUTMIN + 0.12
ǒǒVINMAX * I OMIN
Ǔ
Ǔ ǒ
0.110 ) VD * I OMIN
Ǔ
RL * VD
(22)
Where:
VINMAX = maximum input voltage
IOMIN = minimum load current
VD = catch diode forward voltage.
RL= output inductor series resistance.
This equation assumes nominal on resistance for the high side FET and accounts for worst case variation of
operating frequency set point. Any design operating near the operational limits of the device should be
checked to assure proper functionality.
Internal Compensation Network
The design equations given in the example circuit can be used to generate circuits using the TPS5410. These
designs are based on certain assumptions, and always select output capacitors within a limited range of ESR
values. If a different capacitor type is desired, it may be possible to fit one to the internal compensation of the
TPS5410. Equation 23 gives the nominal frequency response of the internal voltage-mode type III compensation
network:
s
s
1)
1)
2p Fz1
2p Fz2
H(s) +
s
s
s
s
1)
1)
1)
2p Fp1
2p Fp2
2p Fp3
2p Fp0
(23)
ǒ
ǒ
Ǔ ǒ
Ǔ ǒ
Ǔ ǒ
Ǔ
Ǔ ǒ
Ǔ
Where
Fp0 = 2165 Hz, Fz1 = 2170 Hz, Fz2 = 2590 Hz
Fp1 = 24 kHz, Fp2 = 54 kHz, Fp3 = 440 kHz
Fp3 represents the non-ideal parasitics effect.
Using this information along with the desired output voltage, feed forward gain and output filter characteristics,
the closed loop transfer function can be derived.
16
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Thermal Calculations
The following formulas show how to estimate the device power dissipation under continuous conduction mode
operations. They should not be used if the device is working at light loads in the discontinuous conduction mode.
Conduction Loss: Pcon = IOUT 2 x Rds(on) x VOUT / VIN
Switching Loss: Psw = VIN x IOUT x 0.01
Quiescent Current Loss: Pq = VIN x 0.01
Total Loss: Ptot = Pcon + Psw + Pq
Given TA => Estimated Junction Temperature: TJ = TA + Rth x Ptot
Given TJMAX = 125°C => Estimated Maximum Ambient Temperature: TAMAX = TJMAX – Rth x Ptot
PERFORMANCE GRAPHS
The performance graphs in Figure 13 - Figure 20 are applicable to the circuit in Figure 11. TA = 25 °C. unless
otherwise specified.
0.03
100
VI = 14.5 V
VI = 20 V
0.03
VI = 14.5 V
0.02
0.02
90
VI = 30 V
VI = 35 V
85
VI = 25 V
80
VI = 20 V
0.01
Output Voltage Regulation - %
Output Voltage Regulation - %
Efficiency - %
95
VI = 25 V
0
VI = 30 V
-0.01
VI = 36 V
0
0.2
0.4
0.6
0.8
1
IO - Output Current - A
1.2
1.4
Figure 13. Efficiency vs. Output
Current
VIN = 100 mV/div (AC Coupled)
AC Coupled
20 MHz BWL
-0.03
0
IO = 0 A
0
-0.01
IO = 1 A
-0.02
-0.02
75
IO = 0.5 A
0.01
0.2
0.4
0.6
0.8
1
1.2
-0.03
14 16
18
Figure 14. Output Voltage
Regulation % vs. Output Current
VIN = 20 mV/div (AC Coupled)
20 22
24
26
28
30
32
34
36
VI - Input Voltage - V
IO - Output Current - A
Figure 15. Output Voltage
Regulation % vs. Input Voltage
AC Coupled
20 MHz BWL
AC Coupled
20 MHz BWL
VO = 100 mV/div
V(PH) = 10 V/div
V(PH) = 10 V/div
IO = 500 mA/div
t - Time - 1 ms / Div
Figure 16. Input Voltage Ripple
and PH Node, IO = 1 A
t - Time - 1 ms / Div
Figure 17. Output Voltage Ripple
and PH Node, IO = 1 A
t - Time - 200 ms / Div
Figure 18. Transient Response, IO
Step 0.25 to 0.75 A
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VI = 10 V/div
ENA = 2 V/div
VO = 5 V/div
VO = 5 V/div
t - Time - 5 ms / Div
t - Time - 5 ms / Div
Figure 19. Startup Waveform, VI and VO
Figure 20. Startup Waveform, ENA and VO
PERFORMANCE GRAPHS
The performance graphs in Figure 21 - Figure 26 are applicable to the circuit in Figure 12. TA = 25 °C. unless
otherwise specified.
0.1
100
0.08
VI = 15 V
Efficiency - %
95
90
85
VI = 30 V
80
VI = 35 V
0.2
0.4
0.6
0.8
1
IO - Output Current - A
1.2
1.4
Figure 21. Efficiency vs. Output
Current
18
0.04
VI = 7 V
0.02
0
-0.02
VI = 25 V
-0.04
VI = 30 V
VI = 36 V
-0.06
IO = 0.5 A
0.01
IO = 0 A
0
-0.01
IO = 1 A
-0.02
-0.08
VI = 20 V
0
0.02
VI = 15 V
0.06
VI = 20 V
VI = 25 V
75
0.03
VI = 10 V
Output Voltage Regulation - %
VI = 10 V
Output Voltage Regulation - %
VI = 7 V
-0.1
0
0.2
0.4
0.6
0.8
1
1.2
IO - Output Current - A
Figure 22. Output Voltage
Regulation % vs. Output Current
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-0.03
14 16
18
20 22
24
26
28
30
32
34
36
VI - Input Voltage - V
Figure 23. Output Voltage
Regulation % vs. Input Voltage
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VIN = 100 mV/div (AC Coupled)
AC Coupled
20 MHz BWL
VIN = 20 mV/div (AC Coupled)
AC Coupled
20 MHz BWL
AC Coupled
20 MHz BWL
VO = 100 mV/div
V(PH) = 10 V/div
V(PH) = 10 V/div
IO = 500 mA/div
t - Time - 1 ms / Div
Figure 24. Input Voltage Ripple
and PH Node, IO = 1 A
t - Time - 1 ms / Div
Figure 25. Output Voltage Ripple
and PH Node, IO = 1 A
t - Time - 200 ms / Div
Figure 26. Transient Response, IO
Step 0.25 to 0.75 A
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Oct-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS5410MDREP
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
V62/09645-01XE
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS5410-EP :
• Catalog: TPS5410
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Sep-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS5410MDREP
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Sep-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS5410MDREP
SOIC
D
8
2500
346.0
346.0
29.0
Pack Materials-Page 2
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