MICRO-ELECTRONICS 2SD1616A

ELECTRONICS
MICRO
DESCRIPTION
2SD1616A is NPN silicon planar
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.
2SD1616A
NPN
SILICON
TRANSISTOR
4.68
(0.18)
TO-92B
4.6
(0.18)
12.7
(0.5)
min.
3.58
B CE
(0.14)
10
0.51
(0.02)
0.4
(0.016)
2.54
(0.1)
Bottom view
Unit: mm(inch)
0.45
(0.018)
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Power Dissipation @ Ta=25oC
Operating & Storage Junction Temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj,Tstg
60V
120V
6V
1A
0.65W
-55 to +150oC
ELECTRICAL CHARACTERISTICS (Ta=25 oC)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain
D.C. Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
ICBO
IEBO
HFE *
HFE *
VBE *
VCE(sat) *
VBE(sat) *
Cob
Output Capacitance
fT
Gain Bandwidth Product
Turn-On Time
ton
tstg
Storage Time
tf
Fall Time
* Pulse test PW ≦ 350µs, duty cycle ≦ 2%.
MIN
170
45
600
19
100
0.07
0.95
0.07
MAX
100
100
350
700
0.5
1.2
TYP.
TYP.
TYP.
TYP.
UNIT
CONDITIONS
nA VCB=60V IE=0
nA VEB=6V
IC=0
VCE=2V
IC=100mA
VCE=2V
IC=1A
mV VCE=2V
IC=50mA
V
IC=1A
IB=50mA
V
IC=1A
IB=50mA
pF VCB=10V IE=0
IC=100mA
MHz VCE=2V
µs Vcc=10V IC=100mA
µs IB1=-IB2=10mA
µs VBE(off)=-2 to 3V
MICRO ELECTRONICS LTD.
G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.
Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321
HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: [email protected]