DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V IC(DC) – +5.0 A IC(pulse)* – +8.0 A IB(DC) −0.5 A Total power dissipation PT (Ta = 25°C) 1.5 W Total power dissipation PT (Tc = 25°C) 30 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current Collector current Base current (/(&752'( &211(&7,21 * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16131EJ3V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SB601 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) Collector to emitter voltage VCEX(SUS)1 IC = −3 A, IB1 = −IB2 = −3 mA, VBE(OFF) = 5.0 V, L = 180 µH, clamped −100 V Collector to emitter voltage VCEX(SUS)2 IC = −6 A, IB1 = −12 mA, IB2 = 3 mA, VBE(OFF) = 5.0 V, L = 180 µH, clamped −100 V −100 V ICBO VCB = −100 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −100 V, RBE = 51 Ω, Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −100 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −100 V, VBE(OFF) = 1.5 V, Ta = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −3.0 mA DC current gain hFE1* VCE = −2.0 V, IC = −3.0 A 2,000 DC current gain hFE2* VCE = −2.0 V, IC = −5.0 A 500 Collector saturation voltage VCE(sat)* IC = −3.0 A, IB = −3.0 mA −1.5 V Base saturation voltage VBE(sat)* IC = −3.0 A, IB = −3.0 mA −2.0 V Collector cutoff current Turn-on time ton Storage time tstg Fall time IC = −3.0 A, RL = 17 Ω, IB1 = −IB2 = −3.0 mA, VCC ≅ −50 V Refer to the test circuit. tf 15,000 0.5 µs 1.0 µs 1.0 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% h)( CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 3,000 to 7,000 5,000 to 15,000 &ROOHFWRU&XUUHQW,&$ 7RWDO3RZHU'LVVLSDWLRQ37: TYPICAL CHARACTERISTICS (Ta = 25°°C) &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &DVH7HPSHUDWXUH7&°& 2 Unit IC = −3 A, IB1 = −3 mA, L = 1 mH Data Sheet D16131EJ3V0DS ,&'HUDWLQJG7 7UDQVLHQW7KHUPDO5HVLVWDQFHθWKMF°&: 2SB601 &ROOHFWRU&XUUHQW,&$ 3XOVH:LGWK3:PV &ROOHFWRU&XUUHQW,&$ &DVH7HPSHUDWXUH7&°& :LWKLQILQLWHKHDWVLQN &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 '&&XUUHQW*DLQK)( &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 :LWKRXWKHDWVLQN &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ Data Sheet D16131EJ3V0DS 3 2SB601 SWITCHING TIME (tRQ, tVWJ, tI) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 4 Data Sheet D16131EJ3V0DS 2SB601 [MEMO] Data Sheet D16131EJ3V0DS 5 2SB601 • The information in this document is current as of July, 2001. 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