DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA) ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Symbol Ratings Unit Collector to base voltage Parameter VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 15 V Collector current (DC) IC(DC) 2.0 A Collector current (pulse) IC(pulse)* 3.0 A Total power dissipation PT 1.0 Junction temperature Tj Storage temperature Tstg 150 −55 to +150 W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol Conditions MIN. ICBO VCB = 30 V, IE = 0 Emitter cutoff current IEBO VEB = 10 V, IC = 0 DC current gain hFE1 VCE = 5.0 V, IC = 500 mA DC current gain hFE2 VCE = 5.0 V, IC = 2.0 mA * 400 DC base voltage VBE VCE = 5.0 V, IC = 300 mA * 600 * 800 TYP. MAX. Unit 100 nA 100 1500 3200 nA − 660 700 mV V − Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 10 mA * 0.18 0.30 Base saturation voltage VBE(sat) IC = 1.0 A, IB = 10 mA * 0.83 1.2 V 26 35 pF Output capacitance Gain bandwidth product Cob fT VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IE = −500 mA 150 350 MHz ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed hFE1/hFE CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16197EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD1581 TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet D16197EJ1V0DS 2SD1581 Data Sheet D16197EJ1V0DS 3 2SD1581 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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