DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 1.5 A) VCE(sat) ≤ 0.3 V (IC = 4 A, IB = 0.2 A) • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Electrode Connection Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A IC(pulse)* 14 A IB(DC) 3.5 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) 1. Base 2. Collector 3. Emitter * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15596EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4550 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = 4.0 A, IB = 0.4 A, L = 1 mH 60 V Collector to emitter voltage VCEX(SUS) IC = 4.0 A, IB1 = −IB2 = 0.4 A, VBE(OFF) = −1.5 V, L = 180 µH, clamped 60 V Collector cutoff current ICBO VCB = 60 V, IE = 0 10 µA Collector cutoff current ICER VCE = 60 V, RBE = 50 Ω, Ta = 125°C 1.0 mA Collector cutoff current ICEX1 VCE = 60 V, VBE(OFF) = −1.5 V 10 µA Collector cutoff current ICEX2 VCE = 60 V, VBE(OFF) = −1.5 V, Ta = 125°C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA DC current gain hFE1* VCE = 2.0 V, IC = 0.7 A 100 DC current gain hFE2* VCE = 2.0 V, IC = 1.5 A 100 DC current gain hFE3* VCE = 2.0 V, IC = 4.0 A 60 200 400 Collector saturation voltage VCE(sat)1* IC = 4.0 A, IB = 0.2 A 0.3 V Collector saturation voltage VCE(sat)2* IC = 6.0 A, IB = 0.3 A 0.5 V Base saturation voltage VBE(sat)1* IC = 4.0 A, IB = 0.2 A 1.2 V Base saturation voltage VBE(sat)2* IC = 6.0 A, IB = 0.3 A 1.5 V Collector capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 100 pF MHz Gain bandwidth product fT VCE = 10 V, IC = 1.0 A 150 Turn-on time ton 0.1 0.3 µs Storage time tstg IC = 4.0 A, RL = 12.5 Ω, IB1 = −IB2 = 0.2 A, VCC ≅ 50 V 1.0 1.5 µs 0.1 0.3 µs Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Unit Data Sheet D15596EJ2V0DS 2SC4550 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Case Temperature TC (°C) Collector Current IC (A) Collector Current IC (A) 6LQJOHSXOVH Collector to Emitter Voltage VCE (V) Transient Thermal Resistance Rth(j−c) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D15596EJ2V0DS 3 4 )DOO7LPHWIµV 6WRUDJH7LPHWVWJµV 7XUQ2Q7LPHWRQµV &ROOHFWRU&DSDFLWDQFH&RES) %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 3XOVHWHVW *DLQ%DQGZLGWK3URGXFWI70+] '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 2SC4550 3XOVHWHVW &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &ROOHFWRUWR%DVH9ROWDJH9&%9 Data Sheet D15596EJ2V0DS &ROOHFWRU&XUUHQW,&$ 2SC4550 [MEMO] Data Sheet D15596EJ2V0DS 5 2SC4550 • The information in this document is current as of July, 2001. 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