DATA SHEET SILICON POWER TRANSISTOR 2SC2334 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220AB FEATURES • Low collector saturation voltage (TO-220AB) • Fast switching speed • Complementary transistor: 2SA1010 ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Collector current (pulse) IC(pulse) 15 A Base current (DC) Symbol Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C 3.5 A 40 W 1.5 W 150 −55 to +150 °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14902EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC2334 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector to emitter voltage VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 Collector cutoff current ICBO Conditions MIN. IC = 5.0 A, IB1 = 0.5 A, L = 1 mH IC = 5.0 A, IB1 = −IB2 = 0.5 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped IC = 10 A, IB1 = 1.0 A, IB2 = −0.5 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped ICER VCB = 100 V, IE = 0 A VCE = 100 V, RBE = 51 Ω, TA = 125°C MAX. Unit V 100 V 100 V 10 µA 1.0 ICEX1 VCE = 100 V, VBE(OFF) = −1.5 V 10 mA µA ICEX2 VCE = 100 V, VBE(OFF) = −1.5 V, TA = 125°C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 A 10 µA DC current gain hFE1 VCE = 5.0 V, IC = 0.5 ANote 40 hFE2 VCE = 5.0 V, IC = 3.0 ANote 40 Note 20 200 hFE3 VCE = 5.0 V, IC = 5.0 A Collector saturation voltage VCE(sat) IC = 5.0 A, IB = 0.5 ANote 0.6 V Base saturation voltage VBE(sat) IC = 5.0 A, IB = 0.5 ANote IC = 5.0 A, RL = 10 Ω, IB1 = −IB2 = −0.5 A, VCC ≅ 50 V Refer to the test circuit. 1.5 0.5 V µs 1.5 µs 0.5 µs Turn-on time ton Storage time tstg Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 40 to 80 60 to 120 100 to 200 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. 100 Data Sheet D14902EJ2V0DS 2SC2334 TYPICAL CHARACTERISTICS (TA = 25°°C) Derating dT (%) Total Power Dissipation PT (W) 2 mm aluminum board, no insulating board, grease coating, natural air cooling With infinite heatsink Ambient Temperature TA (°C) Collector Current IC (A) Case Temperature TC (°C) 6LQJOHSXOVH Transient Thermal Resistance rth(j-c) (°C/W) Collector to Emitter Voltage VCE (V) Pulse Width PW (ms) Data Sheet D14902EJ2V0DS 3 7XUQ2Q7LPHWRQµV 6WRUDJH7LPHWVWJµV )DOO7LPHWIµV 3XOVHWHVW 4 %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ 2SC2334 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ Data Sheet D14902EJ2V0DS 3XOVHWHVW &ROOHFWRU&XUUHQW,&$ 2SC2334 PACKAGE DRAWING (UNIT: mm) %DVH &ROOHFWRU (PLWWHU )LQFROOHFWRU Data Sheet D14902EJ2V0DS 5 2SC2334 • The information in this document is current as of July, 2001. 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