NEC 2SB1669

DATA SHEET
SILICON POWER TRANSISTOR
2SB1669
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SB1669 is a power transistor that can be directly driven from
the output of an IC. This transistor is ideal for OA and FA equipment
such as motor and solenoid drivers.
FEATURES
ORDERING INFORMATION
Part No.
Package
2SB1669
TO-220AB
2SB1669-S
TO-262
2SB1669-Z
TO-220SMD
• High DC current amplifier rate
hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A)
• Z type available for surface mounting supported prodcuts
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
Ratings
Unit
Collector to base voltage
Parameter
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−3.0
A
Collector current (pulse)
IC(pulse)
−6.0
A
Base current (DC)
Symbol
Conditions
PW ≤ 10 ms,
duty cycle ≤ 50%
IB(DC)
(TC = 25°C)
−1.0
A
25
W
Total power dissipation
PT
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
(TA = 25°C)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15410EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
©
2002
1998
2SB1669
ELECTRICAL CHARACTERISTICS (TA = 25°°C)
Parameter
Collector cutoff current
DC current gain
Symbol
Conditions
ICBO
VCB = −60 V, IE = 0 A
hFE1
VCE = −5.0 V, IC = −0.5 A
hFE2
VCE = −5 V, IC = −3 ANote
MIN.
Note
Collector saturation voltage
VCE(sat)
IC = −3.0 A, IB = −300 mANote
Base saturation voltage
VBE(sat)
IC = −3.0 A, IB = −300 mANote
Gain bandwidth product
fT
100
MAX.
Unit
−10
µA
400
−
−1.0
V
−
20
−2.0
VCE = −5.0 V, IC = −0.5 A
V
5
MHz
Collector capacitance
Cob
VCB = −10 V, IE = 0 A, f = 10 MHz
80
pF
Turn-on time
ton
0.4
µs
Storage time
tstg
IC = −2.0 A, RL = 15 Ω,
IB1 = −IB2 = −200 mA, VCC ≅ −30 V
Refer to the test circuit.
1.7
µs
0.5
µs
Fall time
tf
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
TYP.
Data Sheet D15410EJ2V0DS
2SB1669
TYPICAL CHARACTERISTICS (TA = 25°°C)
Data Sheet D15410EJ2V0DS
3
2SB1669
4
Data Sheet D15410EJ2V0DS
2SB1669
PACKAGE DRAWING (UNIT: mm)
1. Base
2. Collector
3. Emitter
4. Fin (collector)
1. Base
2. Collector
3. Emitter
4. Fin (collector)
1. Base
2. Collector
3. Emitter
4. Fin (collector)
Data Sheet D15410EJ2V0DS
5
2SB1669
• The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4