DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. (@ 0.7 A) • Fast switching speed: tf ≤ 1.0 µs MAX. (@ 0.7 A) • Wide base reverse-bias SOA: VCEX(SUS) = 450 V MIN. (@ 0.5 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Electrode Connection Emitter to base voltage VEBO 7.0 V 2. Collector Collector current (DC) IC(DC) 2.0 A IC(pulse)* 4.0 A IB(DC) 1.0 A Total power dissipation PT (Tc = 25°C) 15 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1. Base 3. Emitter Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16187EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC3569 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = 0.5 A, IB1 = 0.1 A, L = 1 mH 400 V Collector to emitter voltage VCEX(SUS)1 IC = 0.5 A, IB1 = −IB2 = 0.1 A, L = 180 µH, clamped 450 V Collector to emitter voltage VCEX(SUS)2 IC = 1.0 A, IB1 = 0.2 A, −IB2 = 0.1 A, L = 180 µH, clamped 400 V ICBO VCB = 400 V, IE = 0 10 µA Collector cutoff current ICER VCE = 400 V, RBE = 51 Ω, Ta = 125°C 1.0 mA Collector cutoff current ICEX1 VCE = 400 V, VBE(OFF) = −1.5 V 10 µA Collector cutoff current ICEX2 VCE = 400 V, VBE(OFF) = −1.5 V, Ta = 125°C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA DC current gain hFE1* VCE = 5.0 V, IC = 0.2 A 20 DC current gain hFE2* VCE = 5.0 V, IC = 0.5 A 10 Collector cutoff current 80 Collector saturation voltage VCE(sat)* IC = 0.7 A, IB = 0.14 A 1.0 V Base saturation voltage VBE(sat)* IC = 0.7 A, IB = 0.14 A 1.2 V IC = 0.7 A, RL = 214 Ω, IB1 = −IB2 = 0.14 A, VCC ≅ 150 V Refer to the test circuit. 1.0 µs 2.5 µs 1.0 µs Turn-on time ton Storage time tstg Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K HFE1 20 to 40 30 to 60 40 to 80 Collector Current IC (mA) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) 2 Unit Data Sheet D16187EJ1V0DS Collector to Emitter Voltage VCE (V) IC Derating dT (%) Transient Thermal Resistance Rth(j-c) (°C/W) 2SC3569 Case Temperature TC (°C) Ta = 25°C (without heatsink) (with infinite heatsink) Collector Current IC (A) Collector Current IC (A) Pulse Width PW (s) Collector to Emitter Voltage VCE (V) DC Current Gain hFE Collector Saturation Voltage VCE(sat) (V) Base Saturation Voltage VBE(sat) (V) Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Collector Current IC (mA) Data Sheet D16187EJ1V0DS 3 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) 2SC3569 Collector Current IC (A) Base current waveform Collector current waveform 4 Data Sheet D16187EJ1V0DS 2SC3569 [MEMO] Data Sheet D16187EJ1V0DS 5 2SC3569 • The information in this document is current as of July, 2001. 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