DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. (@ 2 A) • Fast switching speed: tf ≤ 0.7 µs MAX. (@ 2 A) • Wide base reverse-bias SOA: VCEX(SUS) = 450 V MIN. (@ 2 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 8.0 V Collector current (DC) IC(DC) 5.0 A IC(pulse)* 10 A IB(DC) 2.5 A Total power dissipation PT (Tc = 25°C) 25 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) Electrode Connection 1. Base 2. Collector 3. Emitter * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16188EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC3570 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = 2.0 A, IB1 = 0.4 A, L = 1 mH 400 V Collector to emitter voltage VCEX(SUS)1 IC = 2.0 A, IB1 = −IB2 = 0.4 A, L = 180 µH, clamped 450 V Collector to emitter voltage VCEX(SUS)2 IC = 4.0 A, IB1 = 0.8 A, −IB2 = 0.4 A, L = 180 µH, clamped 400 V ICBO VCB = 400 V, IE = 0 10 µA Collector cutoff current ICER VCE = 400 V, RBE = 51 Ω, Ta = 125°C 1.0 mA Collector cutoff current ICEX1 VCE = 400 V, VBE(OFF) = −1.5 V 10 µA Collector cutoff current ICEX2 VCE = 400 V, VBE(OFF) = −1.5 V, Ta = 125°C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA DC current gain hFE1* VCE = 5.0 V, IC = 0.5 A 20 DC current gain hFE2* VCE = 5.0 V, IC = 2.0 A 10 Collector cutoff current 80 Collector saturation voltage VCE(sat)* IC = 2.0 A, IB = 0.4 A 1.0 V Base saturation voltage VBE(sat)* IC = 2.0 A, IB = 0.4 A 1.2 V IC = 2.0 A, RL = 75 Ω, IB1 = −IB2 = 0.4 A, VCC ≅ 150 V Refer to the test circuit. 1.0 µs 2.0 µs 0.7 µs Turn-on time ton Storage time tstg Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 20 to 40 30 to 60 40 to 80 Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) 2 Unit Collector to Emitter Voltage VCE (V) Data Sheet D16188EJ1V0DS ,&'HUDWLQJG7 7UDQVLHQW7KHUPDO5HVLVWDQFH5WKMF°&: 2SC3570 &DVH7HPSHUDWXUH7&°& ZLWKLQILQLWHKHDWVLQN &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ 3XOVH:LGWK3:V &ROOHFWRUWR(PLWWHU9ROWDJH9&( 9 '&&XUUHQW*DLQK)( &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRUWR(PLWWHU9ROWDJH9&( 9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ Data Sheet D16188EJ1V0DS 3 7XUQ2Q7LPHWRQµV 6WRUDJH7LPHWVWJµV )DOO7LPHWIµV 2SC3570 &ROOHFWRU&XUUHQW,&$ %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 4 Data Sheet D16188EJ1V0DS 2SC3570 [MEMO] Data Sheet D16188EJ1V0DS 5 2SC3570 • The information in this document is current as of July, 2001. 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