DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors PACKAGE DRAWING (Unit: mm) developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A) • Fast switching speed: tf ≤ 0.3 µs MAX. (IC = 3 A) • High DC current gain ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 60 V Base to Emitter Voltage VEBO 7.0 V Collector Current (DC) IC(DC) 5.0 A 10 A 2.5 A Collector Current (pulse) IC(pulse) Base Current (DC) Note1 IB(DC) Total Power Dissipation Total Power Dissipation PT (TC = 25°C) PT (TA = 25°C) 15 Note2 1.0 W Note3 , 2.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, duty cycle ≤ 50% 2. Printing borard mounted 2 3. 7.5 mm x 0.7 mm, ceramic board mounted Electrode Connection 1. Base 2. Collector 3. Emitter 4. Fin (collector) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16430EJ1V0DS00 (1st edition) Date Published October 2002 NS CP(K) Printed in Japan © 2002 2SC4332, 2SC4332-Z ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Conditions MIN. Collector to Emitter Voltage VCEO(SUS) IC = 3.0 A, IB = 0.3 A, L = 1 mH 60 V Collector to Emitter Voltage VCEX(SUS) IC = 3.0 A, IB1 = −IB2 = 0.3 A, VBE(OFF) = −1.5 V, L = 180 µH, clamped 60 V MAX. Unit Collector Cut-off Current ICBO VCE = 60 V, IE = 0 10 µA Collector Cut-off Current ICER VCE = 60 V, RBE = 51 Ω, TA = 125°C 1.0 mA Collector Cut-off Current ICEX1 VCE = 60 V, VBE(OFF) = −1.5 V 10 µA Collector Cut-off Current ICEX2 VCE = 60 V, VBE(OFF) = −1.5 V, TA = 125°C 1.0 mA Emitter Cut-off Current IEBO VEB = 5.0 V, IC = 0 10 µA DC Current Gain Note VCE = 2.0 V, IC = 0.5 A 100 Note VCE = 2.0 V, IC = 1.0 A 100 Note VCE = 2.0 V, IC = 3.0 A 60 hFE1 DC Current Gain hFE2 DC Current Gain hFE3 Note 400 Collector Saturation Voltage VCE(sat)1 IC = 3.0 A, IB = 0.15 A 0.3 V Collector Saturation Voltage VCE(sat)2Note IC = 4.0 A, IB = 0.2 A 0.5 V Base Saturation Voltage VBE(sat)1Note IC = 3.0 A, IB = 0.15 A 1.2 V Base Saturation Voltage Note IC = 4.0 A, IB = 0.2 A 1.5 V Collector Capacitance VBE(sat)2 Cob VCB = 10 V, IE = 0, f = 1.0 MHz 130 pF 150 MHz Gain Bandwidth Product fT VCE = 10 V, IE = −0.5 A Turn-on Time ton Storage Time tstg IC = 3.0 A, RL = 16.7 Ω, IB1 = −IB2 = 0.15 A, VCC 50 V Refer to the test circuit. Fall Time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D16430EJ1V0DS 0.3 µs 1.5 µs 0.3 µs 2SC4332, 2SC4332-Z [MEMO] Data Sheet D16430EJ1V0DS 3 2SC4332, 2SC4332-Z • The information in this document is current as of October, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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