DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Auto-mounting possible in radial taping specifications • Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions • High hFE and low VCE(sat): VCE(sat) ≤ −0.3 V @IC = −3.0 A, IB = −0.15 A hFE ≥ 100 @VCE = −2.0 V, IC = −1.0 A • Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO −150 V Collector to emitter voltage VCEO −100 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A Collector current (pulse) IC(pulse) −10 A Base current (DC) IB(DC) −2.5 A 1.8 W PW ≤ 300 µs, duty cycle ≤ 2% Ta = 25°C Total power dissipation PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15592EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SA1845 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. MAX. Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −100 V, REB = 50 Ω Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −100 V, VBE(off) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −100 V, VBE(off) = 1.5 V Ta = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −1.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −3.0 A 60 Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.2 A −1.5 V Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 150 MHz 130 pF Collector capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz Turn-on time ton Storage time tstg IC = −3.0 A IB1 = −IB2 = −0.15 A RL = 16.7 Ω, VCC = −50 V Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE 100 to 200 150 to 300 200 to 400 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter 2 TYP. Data Sheet D15592EJ2V0DS − 400 − − 0.3 µs 1.4 µs 0.4 µs 2SA1845 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Ambient Temperature Ta (°C) Collector Current IC (A) Transient Thermal Resistance rth(j-a)(t) (°C/W) Ambient Temperature Ta (°C) Single pulse Collector to Emitter Voltage VCE (V) Collector Current IC (A) Base Saturation Voltage VBE(sat) (V) Pulse Width PW (s) Collector to Emitter Voltage VCE (V) Data Sheet D15592EJ2V0DS Pulse test Collector Current IC (A) 3 Pulse test Pulse test DC Current Gain hFE Collector Saturation Voltage VCE(sat) (V) 2SA1845 Collector Current IC (A) Collector Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Collector Current IC (A) Turn-On Time ton (µs) Storage Time tstg (µs) Fall Time tf (µs) Collector Current IC (A) Collector Current IC (A) 4 Data Sheet D15592EJ2V0DS Collector to Base Voltage VCB (V) 2SA1845 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform Data Sheet D15592EJ2V0DS 5 2SA1845 • The information in this document is current as of July, 2001. 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