DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Low VCE(sat): VCE(sat) ≤ 0.3 V • High hFE: @IC = 3.0 A, IB = 30 mA hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A • On-chip dumper-diode • Auto-mounting possible in radial taping specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±7.5 A Collector current (pulse) IC(pulse) ±10 A Base current (DC) IB(DC) 2.0 A Total power dissipation PT PW ≤ 10 ms, duty cycle ≤ 2% Ta = 25°C 1.8 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15603EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4813 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 17 mA DC current gain hFE1* VCE = 2.0 V, IC = 3.0 A 450 2,000 − DC current gain hFE2* VCE = 2.0 V, IC = 5.0 A 150 Collector saturation voltage VCE(sat)1* IC = 3.0 A, IB = 60 mA 0.1 0.2 V Collector saturation voltage VCE(sat)2* IC = 3.0 A, IB = 30 mA 0.15 0.3 V Collector saturation voltage VCE(sat)3* IC = 5.0 A, IB = 100 mA 0.4 V Collector saturation voltage VCE(sat)4* IC = 5.0 A, IB = 50 mA 0.55 V Base saturation voltage VBE(sat)* IC = 5.0 A, IB = 50 mA 1.2 V Gain bandwidth product fT VCE = 5.0 V, IC = 1.0 A 150 MHz − Collector capacitance Cob VCB = 10 V, IE = 0 , f = 1 MHz 110 pF Turn-on time ton 0.5 µs Storage time tstg IC = 5.0 A, IB1 = −IB2 = 100 mA RL = 3.0 Ω, VCC ≅ 16 V 2.0 µs 0.5 µs 1.4 V Fall time Diode order voltage tf VDF IDF = 5.0 A * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter 0.7 MAX. EQUIVALENT CIRCUIT 2 Data Sheet D15603EJ2V0DS 2SC4813 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Ambient Temperature Ta (°C) Collector Current IC (A) Transient Thermal Resistance rth(j-a)(t) (°C/W) Ambient Temperature Ta (°C) Single pulse Pulse Width PW (s) Collector to Emitter Voltage VCE (V) DC Current Gain hFE Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Data Sheet D15603EJ2V0DS Collector Current IC (A) 3 4 Switching Time tsw (s) Gain Bandwidth Product fT (MHz) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SC4813 Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Data Sheet D15603EJ2V0DS 2SC4813 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform Data Sheet D15603EJ2V0DS 5 2SC4813 • The information in this document is current as of July, 2001. 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