DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −1 A) VCE(sat) ≤ 0.3 V (IC = −3 A, IB = −0.15 A) • Full-mold package that does not require an insulating board or bushing when mounting. Electrode Connection 1. Base 2. Collector 3. Emitter . ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A IC(pulse)* −10 A IB(DC) −2.5 A Total power dissipation PT (Tc = 25°C) 25 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16125EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1741 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions Collector to emitter voltage VCEO(SUS) IC = −3.0 A, IB = −0.3 A, L = 1 mH Collector to emitter voltage VCEX(SUS) IC = −3.0 A, IB1 = −IB2 = −0.3 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped MIN. TYP. MAX. V −60 V Collector cutoff current ICBO VCB = −60 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, Ta = 125 °C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −1.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −3.0 A 60 Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.2 A −1.5 V Collector capacitance Cob 400 VCB = −10 V, IE = 0, f = 1.0 MHz 130 pF 80 MHz Gain bandwidth product fT VCE = −10 V, IC = −0.5 A Turn-on time ton Storage time tstg IC = −3.0 A, RL = 17 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −50 V Refer to the test circuit. Fall time tf 0.3 µs 1.5 µs 0.3 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Case Temperature TC (°C) 2 Unit −60 Data Sheet D16125EJ1V0DS 2SA1741 Collector Current IC (A) Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance Rth Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Collector Current IC (A) Collector Current IC (A) Pulse Width (s) Collector to Emitter Voltage VCE (V) Data Sheet D16125EJ1V0DS Collector to Emitter Voltage VCE (V) 3 2SA1741 Pulse test DC Current Gain hFE Collector Current IC (A) Pulse test Single pulse Collector Current IC (A) Base to Emitter Voltage VBE (V) DC Current Gain hFE Pulse test Collector Saturation Voltage VCE(sat) (V) Pulse test Collector Current IC (A) Base Saturation Voltage VBE(sat) (V) Pulse test Gain Bandwidth Product fT (MHz) Collector Current IC (A) Collector Current IC (A) 4 Pulse test Collector Current IC (A) Data Sheet D16125EJ1V0DS 2SA1741 6WRUDJH7LPHWVWJµV )DOO7LPHWIµV &ROOHFWRU&DSDFLWDQFH&RES) 5HIHUWRWKHWHVWFLUFXLW &ROOHFWRUWR%DVH9ROWDJH9&%9 &ROOHFWRU&XUUHQW,&$ SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform Data Sheet D16125EJ1V0DS 5 2SA1741 • The information in this document is current as of July, 2001. 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