DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost reduction. FEATURES • High hFE and low VCE(sat): VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 0.15 A hFE ≥ 100 @VCE = 2.0 V, IC = 1.0 A • Available for auto mount in radial taping specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 5.0 A IC(pulse)* 10 A IB(DC) 2.5 A Total power dissipation PT 1.8 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15605EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4815 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector to emitter voltage VCEO(SUS) IC = 5.0 A, IB = 0.5 A, L = 1 mH 60 V Collector to emitter voltage VCEX(SUS) IC = 2.5 A, IB1 = −IB2 = 0.25 A VBE(OFF) = −1.5 V, L = 180 µH, Clamped 60 V Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 10 µA DC current gain hFE1* VCE = 2.0 V, IC = 0.5 A 100 DC current gain hFE2* VCE = 2.0 V, IC = 1.0 A 100 DC current gain hFE3* VCE = 2.0 V, IC = 3.0 A 60 Collector saturation voltage VCE(sat)1* Collector saturation voltage 200 400 IC = 3.0 A, IB = 0.15 A 0.15 0.3 V VCE(sat)2* IC = 4.0 A, IB = 0.2 A 0.3 0.5 V Base saturation voltage VBE(sat)1* IC = 3.0 A, IB = 0.15 A 0.9 1.2 V Base saturation voltage VBE(sat)2* IC = 4.0 A, IB = 0.2 A 1.2 1.5 V VCB = 10 V, IE = 0 , f = 1.0 MHz 70 pF Collector capacitance Cob Gain bandwidth product fT VCE = 10 V, IC = 0.5 A 150 MHz Turn-on time ton 0.1 µs Storage time tstg IC = 3.0 A, RL = 17 Ω, IB1 = −IB2 = 0.15 A, VCC ≅ 50 V 1.0 µs 0.25 µs Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION (OHFWURGH&RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU 2 or less Data Sheet D15605EJ3V0DS 2SC4815 ,&'HUDWLQJG7 7RWDO3RZHU'LVVLSDWLRQ37: TYPICAL CHARACTERISTICS (Ta = 25°°C) $PELHQW7HPSHUDWXUH7D°& &ROOHFWRU&XUUHQW,&$ 7UDQVLHQW7KHUPDO5HVLVWDQFH5WKMD°&: &DVH7HPSHUDWXUH7F°& 6LQJOHSXOVH 3XOVH:LGWK3:V &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 3XOVHWHVW &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 Data Sheet D15605EJ3V0DS &ROOHFWRU&XUUHQW,&$ 3 %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 2SC4815 3XOVHWHVW &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&DSDFLWDQFH&RES) *DLQ%DQGZLGWK3URGXFWI70+] &ROOHFWRU&XUUHQW,&$ 6ZLWFKLQJ7LPHWVZµV &ROOHFWRUWR%DVH9ROWDJH9&%9 &ROOHFWRU&XUUHQW,&$ 4 3XOVHWHVW Data Sheet D15605EJ3V0DS &ROOHFWRU&XUUHQW,&$ 2SC4815 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP Data Sheet D15605EJ3V0DS 5 2SC4815 • The information in this document is current as of July, 2001. 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