DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE(sat). This transistor is ideal Part No. Package for use as a driver in DC/DC converters and actuators. 2SA1742 Isolated TO-220 In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. (Isolated TO-220) FEATURES • High hFE and low VCE(sat): hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A • Full-mold package that does not require an insulating board or bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −7.0 A Collector current (pulse) IC(pulse) −14 A Base current (DC) PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C −3.5 A 30 W 2.0 W 150 −55 to +150 °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14858EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1742 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector to emitter voltage VCEO(SUS) IC = −4.0 V, IB = −0.4 A, L = 1 mH −60 V VCEX(SUS) IC = −4.0 A, IB1 = −IB2 = −0.4 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped −60 V Collector cutoff current Emitter cutoff current DC current gain Collector saturation voltage Base saturation voltage Collector capacitance Conditions MAX. Unit VCB = −60 V, IE = 0 A −10 µA ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 mA µA ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125°C −1.0 mA IEBO VEB = −5.0 V, IC = 0 A −10 µA hFE1 VCE = −2.0 V, IC = −0.7 ANote 100 hFE2 VCE = −2.0 V, IC = −1.5 ANote 100 hFE3 VCE = −2.0 V, IC = −4.0 ANote 60 400 VCE(sat)1 IC = −4.0 A, IB = −0.2 ANote −0.3 V VCE(sat)2 IC = −6.0 A, IB = −0.3 ANote −0.5 V VBE(sat)1 IC = −4.0 A, IB = −0.2 ANote −1.2 V VBE(sat)2 IC = −6.0 A, IB = −0.3 ANote −1.5 VCB = −10 V, IE = 0 A, f = 1.0 MHz 180 40 Gain bandwidth product fT VCB = −10 V, IC = −1.0 A Turn-on time ton Storage time tstg IC = −4.0 A, RL = 12.5 Ω, IB1 = −IB2 = −0.2 A, VCC ≅ −50 V Refer to the test circuit. tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. ICBO Cob Fall time MIN. Data Sheet D14858EJ2V0DS V pF 0.3 MHz µs 1.5 µs 0.3 µs 2SA1742 Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) Case Temperature TC (°C) Collector Current IC (A) Collector current IC (A) Collector to Emitter Voltage VCE (V) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance rth(t) (°C/W) Collector Current IC (A) Case Temperature TC (°C) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D14858EJ2V0DS 3 4 Fall Time tf (µs) StorageTime tstg (µs) Turn-On Time ton (µs) Collector Capacitance Cob (pF) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Pulse test Gain Bandwidth Product fT (MHz) DC Current Gain hFE Collector Current IC (A) 2SA1742 Pulse test Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Collector to Base Voltage VCB (V) Data Sheet D14858EJ2V0DS Collector Current IC (A) 2SA1742 PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base 2. Collector 3. Emitter Data Sheet D14858EJ2V0DS 5 2SA1742 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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