DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Low VCE(sat): VCE(sat) ≤ 0.3 V • High hFE: @IC = 1.5 A, IB = 10 mA hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A • On-chip dumper-diode • Auto-mounting possible in radial taping specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±2.5 A Collector current (pulse) IC(pulse) ±5.0 A Base current (DC) IB(DC) 1.0 A 1.8 W PW ≤ 300 µs, duty cycle ≤ 10% Ta = 25°C Total power dissipation PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15604EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4814 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 120 V, IE = 0 50 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 50 µA DC current gain hFE1* VCE = 2 V, IC = 1.0 A 300 700 1,200 − DC current gain hFE2* VCE = 2 V, IC = 1.5 A 250 600 Collector saturation voltage VCE(sat)* IC = 1.5 A, IB = 10 mA 0.3 V Base saturation voltage VBE(sat)* IC = 1.5 A, IB = 10 mA 1.3 V Gain bandwidth product fT VCE = 10 V, IC = 1.0 A 60 MHz − Collector capacitance Cob VCE = 10 V, IE = 0 , f = 1 MHz 40 pF Turn-on time ton 0.5 µs Storage time tstg IC = 1.5 A, IB1 = −IB2 = 10 mA RL = 8.0 Ω, VCC = 12 V 2.0 µs 0.5 µs Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION 0.7 MAX. Electrode Connection 1. Base 2. Collector 3. Emitter EQUIVALENT CIRCUIT 2 Data Sheet D15604EJ2V0DS 2SC4814 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Ambient Temperature Ta (°C) Collector Current IC (A) Transient Thermal Resistance Rth(j-a) (°C/W) Ambient Temperature Ta (°C) Single pulse Collector to Emitter Voltage VCE (V) Single pulse Pulse Width PW (s) DC Current Gain hFE Collector Current IC (A) Pulse test Collector to Emitter Voltage VCE (V) Collector Current IC (A) Data Sheet D15604EJ2V0DS 3 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) 4 Collector Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Collector Saturation Voltage VCE(sat) (V) Pulse test Base Saturation Voltage VBE(sat) (V) 2SC4814 Collector Current IC (A) Collector Current IC (A) Pulse test Collector Current IC (A) Data Sheet D15604EJ2V0DS Pulse test Collector Current IC (A) Collector to Base Voltage VCB (V) 2SC4814 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform Data Sheet D15604EJ2V0DS 5 2SC4814 • The information in this document is current as of July, 2001. 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