DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT: mm) • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO 2SB548/ 2SD414 2SB549/ 2SD415 −100/120 −80/80 Unit V −100/100 V Emitter to base voltage VEBO −5.0/5.0 Collector current IC(DC) −0.8/0.8 A Collector current −1.5/1.5 A Total power dissipation IC(pulse)* PT (Ta = 25°C) 1.0 W Total power dissipation PT (Tc = 25°C) 10 Junction temperature Tj W °C Storage temperature Tstg 150 −55 to +150 V Electrode Connection °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) MAX. Unit Collector cutoff current Parameter Symbol ICBO VCB = −80/80 V, IE = 0 −1.0/1.0 µA Emitter cutoff current IEBO VEB = −3.0/3.0 V, IC = 0 −1.0/1.0 µA DC current gain hFE1 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* 20 MIN. TYP. 40 V hFE2 VCE = −5.0/5.0 V, IC = −200/200 mA* VCE(sat) IC = −500/500 mA, IB = −50/50 mA* 90 −0.4/0.3 320 −2.0/2.0 Base saturation voltage VBE(sat) IC = −500/500 mA, IB = −50/50 mA* −0.9/0.9 −1.5/1.5 Gain bandwidth product fT VCE = −5.0/5.0 V, IC = −100/100 mA 70/45 MHz Cob VCB = −10/10 V, IE = 0, f = 1.0 MHz 25/15 pF DC current gain Collector saturation voltage Collector capacitance * Conditions V Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE2 CLASSIFICATION Marking S R Q P hFE2 40 to 80 60 to 120 100 to 200 160 to 320 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16141EJ2V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SB548, 549/2SD414, 415 TYPICAL CHARACTERISTICS (Ta = 25°°C) Note Derating dT (%) Total Power Dissipation PT (W) Note 1. 1 mm aluminum board for heatsink 2. No insulating board 3. Silicon grease coating 4. Horizontal level With infinite heatsink Without te heatsink Case Temperature Tc (°C) Collector Current IC (A) Collector Current IC (A) Temperature T (°C) Note 1. Tc = 25 °C 2. Derate the dissipation limited area by case temperature and duty cycle. 3. S/b limited area is a single pulse. Derate this area by case temperature. Collector to Emitter Voltage VCE (V) Collector Current IC (A) Transient Thermal Resistance ∆Rth (°C/W) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Pulse Width PW (ms) 2 Note 1. Tc = 25 °C 2. Derate the dissipation limited area by case temperature and duty cycle. 3. S/b limited area is a single pulse. Derate this area by Data Sheet D16141EJ2V0DS '&%DVH9ROWDJH9%(9 '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 2SB548, 549/2SD414, 415 &ROOHFWRU&XUUHQW,&$ *DLQ%DQGZLGWK3URGXFWI70+] %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&DSDFLWDQFH&RES) &ROOHFWRU&XUUHQW,&$ :LWKKHDWVLQN IRUFHGDLU FRROLQJ &ROOHFWRUWR%DVH9ROWDJH9&%9 Data Sheet D16141EJ2V0DS 3 2SB548, 549/2SD414, 415 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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