NEC 2SD415

DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
PACKAGE DRAWING (UNIT: mm)
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
2SB548/
2SD414
2SB549/
2SD415
−100/120
−80/80
Unit
V
−100/100
V
Emitter to base voltage
VEBO
−5.0/5.0
Collector current
IC(DC)
−0.8/0.8
A
Collector current
−1.5/1.5
A
Total power dissipation
IC(pulse)*
PT (Ta = 25°C)
1.0
W
Total power dissipation
PT (Tc = 25°C)
10
Junction temperature
Tj
W
°C
Storage temperature
Tstg
150
−55 to +150
V
Electrode Connection
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
MAX.
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = −80/80 V, IE = 0
−1.0/1.0
µA
Emitter cutoff current
IEBO
VEB = −3.0/3.0 V, IC = 0
−1.0/1.0
µA
DC current gain
hFE1
VCE = −5.0/5.0 V, IC = −2.0/2.0 mA*
20
MIN.
TYP.
40
V
hFE2
VCE = −5.0/5.0 V, IC = −200/200 mA*
VCE(sat)
IC = −500/500 mA, IB = −50/50 mA*
90
−0.4/0.3
320
−2.0/2.0
Base saturation voltage
VBE(sat)
IC = −500/500 mA, IB = −50/50 mA*
−0.9/0.9
−1.5/1.5
Gain bandwidth product
fT
VCE = −5.0/5.0 V, IC = −100/100 mA
70/45
MHz
Cob
VCB = −10/10 V, IE = 0, f = 1.0 MHz
25/15
pF
DC current gain
Collector saturation voltage
Collector capacitance
*
Conditions
V
Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking
S
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
160 to 320
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Note
Derating dT (%)
Total Power Dissipation PT (W)
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Case Temperature Tc (°C)
Collector Current IC (A)
Collector Current IC (A)
Temperature T (°C)
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by case
temperature.
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Transient Thermal Resistance ∆Rth (°C/W)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
2
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by
Data Sheet D16141EJ2V0DS
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2SB548, 549/2SD414, 415
• The information in this document is current as of July, 2001. The information is subject to change
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M8E 00. 4