DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING (UNIT: mm) collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 5 A) VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A) • On-chip C to E damper diode • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±15 A IC(pulse)* ±22 A IB(DC) 4.0 A Total power dissipation PT (Tc = 25°C) 35 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) Electrode Connection 1. Base 2. Collector 3. Emitter EQUIVALENT CIRCUIT * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15600EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4554 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 17 mA DC current gain hFE1 VCE = 2.0 V, IC = 5.0 A 450 DC current gain hFE2 VCE = 2.0 V, IC = 10 A 150 Collector saturation voltage VCE(sat)1 IC = 5.0 A, IB = 100 mA Collector saturation voltage VCE(sat)2 IC = 5.0 A, IB = 50 mA Collector saturation voltage VCE(sat)3 Collector saturation voltage 800 2,000 0.25 V 0.3 V IC = 10 A, IB = 200 mA 0.4 V VCE(sat)4 IC = 10 A, IB = 100 mA 0.75 V Base saturation voltage VBE(sat) IC = 10 A, IB = 100 mA 1.2 V Gain bandwidth product fT VCE = 5.0 V, IC = 1.0 A 100 MHz 0.12 Collector capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 210 pF Turn-on time ton 0.5 µs Storage time tstg IC = 8.0 A, RL = 2.0 Ω, IB1 = −IB2 = 80 mA, VCC ≅ 16 V 2.0 µs 0.5 µs 1.6 V Refer to the test circuit. Fall time Diode forward voltage tf VDF IDF = 10 A SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 MAX. Data Sheet D15600EJ2V0DS 2SC4554 IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Case Temperature TC (°C) Collector Current IC (A) Case Temperature TC (°C) Single pulse Transient Thermal Resistance r(t) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D15600EJ2V0DS 3 DC Current Gain hFE Collector Current IC (A) 2SC4554 Collector Current IC (A) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Collector Current IC (A) 4 Collector Current IC (A) Data Sheet D15600EJ2V0DS 2SC4554 [MEMO] Data Sheet D15600EJ2V0DS 5 2SC4554 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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