DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT: mm) • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension: PT: 0.75 W • Complementary transistor with 2SC3478 and 2SC3478A ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) 2SA1376/2SA1376A Parameter Symbol Ratings Collector to base voltage VCBO −200 Unit V Collector to emitter voltage VCEO −180/−200 V Emitter to base voltage VEBO −5 V Collector current (DC) IC(DC) −100 mA Collector current (pulse) IC(pulse)* −200 mA Total power dissipation PT 0.75 Junction temperature Tj Storage temperature Tstg 150 −55 to +150 W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol Conditions 2SA1376/2SA1376A MAX. Unit ICBO VCB = −200 V, IE = 0 MIN. TYP. −100 nA IEBO VEB = −5 V, IC = 0 −100 DC current gain hFE1 ** VCE = −10 V, IC = −10 mA 135 300/200 600/400 nA − DC current gain hFE2 ** VCE = −10 V, IC = −100 mA DC base voltage VBE ** VCE = −10 V, IC = −10 mA 81 −600 −650 −700 mV V Emitter cutoff current − Collector saturation voltage VCE(sat) ** IC = −50 mA, IB = −5 mA −0.2 −0.3 Base saturation voltage VBE(sat) ** IC = −50 mA, IB = −5 mA −0.8 −1.2 V VCB = −30 V, IE = 0, f = 1.0 MHz 3.5 4.0 pF Output capacitance Cob fT VCE = −10 V, IE = 10 mA Turn-on time ton Turn-off time toff IC = −10 mA, IB1 = −IB2 = −1 mA, VCC = –10 V Gain bandwidth product 80 120 0.16 MHz µs 1.5 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16194EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SA1376, 1376A hFE CLASSIFICATION Marking L K U hFE1 135 to 270 200 to 400 300 to 600 (The U rank is not available for the 2SA1376A.) 2 Data Sheet D16194EJ1V0DS 2SA1376, 1376A TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16194EJ1V0DS 3 2SA1376, 1376A 4 Data Sheet D16194EJ1V0DS 2SA1376, 1376A [MEMO|] Data Sheet D16194EJ1V0DS 5 2SA1376, 1376A • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4