DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. ORDERING INFORMATION Ordering Name Package 2SD2161 Isolated TO-220 In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. (Isolated TO-220) FEATURES • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A) • Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO Collector current (DC) IC(DC) 7.0 ±5.0 A Collector current (pulse) IC(pulse) ±10 A Base current (DC) Symbol Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C V 0.5 A 20 W 2.0 W 150 −55 to +150 °C °C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14864EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2161 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector cutoff current ICBO DC current gain hFE1 hFE2 Conditions MIN. VCB = 100 V, IE = 0 A MAX. Unit 1.0 µA VCE = 2.0 V, IC = 2.0 A Note 2,000 VCE = 2.0 V, IC = 4.0 A Note 500 Note 1.5 V 2.0 V Collector saturation voltage VCE(sat) IC = 2.0 A, IB = 2.0 mA Base saturation voltage VBE(sat) IC = 2.0 A, IB = 2.0 mANote Gain bandwidth product fT 8,000 20,000 VCE = 5.0 V, IC = 0.5 A 30 MHz Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz 35 pF Turn-on time ton 1.0 µs Storage time tstg IC = 2.0 A, RL = 25 Ω, IB1 = −IB2 = 2.0 mA, VCC ≅ 50 V Refer to the test circuit. 3.5 µs 1.2 µs Collector capacitance Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 4,000 to 10,000 8,000 to 20,000 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 2 TYP. Data Sheet D14864EJ2V0DS 2SD2161 Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°°C) Case Temperature TC (°C) Case Temperature TC (°C) Collector Current IC (A) Single pulse Transient Thermal Resistance rth(t) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink Rth(j – a) With infinite heatsink Pulse Width PW (s) Data Sheet D14864EJ2V0DS 3 2SD2161 '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 3XOVHWHVW &ROOHFWRU&XUUHQW,&$ 3XOVHWHVW %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 &ROOHFWRUWR(PLWWHU9ROWDJH9&( 9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ 4 3XOVHWHVW Data Sheet D14864EJ2V0DS 2SD2161 PACKAGE DRAWING (UNIT: mm) %DVH &ROOHFWRU (PLWWHU Data Sheet D14864EJ2V0DS 5 2SD2161 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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