DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed (in millimeter) 3.0 ±0.3 for high speed switching applications. 10.6 MAX. 5.9 MIN. RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) 4 1 2 3 6.0 MAX. • Low Ciss Ciss = 1500 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 1.3 ±0.2 10.0 • Low On-Resistance RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4.8 MAX. 3.6 ±0.2 1.3 ±0.2 12.7 MIN. 15.5 MAX. FEATURES 0.5 ±0.2 2.8 ±0.2 0.75 ±0.1 2.54 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applica- MP-25 (TO-220) 4.8 MAX. (10.0) tions. 1.3 ±0.2 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±30 A Drain Current (pulse)* ID(pulse) ±120 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current** IAS 30 A Single Avalanche Energy** EAS 90 mJ * 1.4 ±0.2 1.0 ±0.3 (2.54) (2.54) 1 2 3 8.5 ±0.2 60 1.1 ±0.4 3.0 ±0.5 VDSS R) .5 ) (0 .8R (0 0.5 ±0.2 2.8 ±0.2 Drain to Source Voltage 1.5 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 1.0 ±0.5 4 MP-25Z(SURFACE MOUNT TYPE) Drain PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Gate Body Diode Gate Protection Diode Source The information in this document is subject to change without notice. Document No. D13398EJ1V0DS00 (1st edition) (Previous No. TC-2492) Date Published March 1998 N CP(K) Printed in Japan © 1994 2SK2411, 2SK2411-Z ELECTRICAL CHARACTERISTICS (TA = 25 °C) TYP. MAX. UNIT Drain to Source On-Resistance CHARACTERISTIC SYMBOL RDS(on)1 MIN. 31 40 mΩ VGS = 10 V, ID = 15 A Drain to Source On-Resistance RDS(on)2 40 60 mΩ VGS = 4 V, ID = 15 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 15 A 10 µA VDS = 60 V, VGS = 0 ±10 µA VGS = ±20 V, VDS = 0 Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 Forward Transfer Admittance | yfs | 15 27 Drain Leakage Current IDSS TEST CONDITIONS Gate to Source Leakage Current IGSS Input Capacitance Ciss 1500 pF VDS = 10 V Output Capacitance Coss 720 pF VGS = 0 Reverse Transfer Capacitance Crss 190 pF f = 1 MHz Turn-On Delay Time td(on) 20 ns ID = 15 A Rise Time tr 260 ns VGS(on) = 10 V Turn-Off Delay Time td(off) 130 ns VDD = 30 V Fall Time tf 150 ns RG = 10 Ω Total Gate Charge QG 50 nC ID = 30 A Gate to Source Charge QGS 5.0 nC VDD = 48 V Gate to Drain Charge QGD 15 nC VGS = 10 V Body Diode Forward Voltage VF(S-D) 1.1 V Reverse Recovery Time trr 110 ns IF = 30 A, VGS = 0 Reverse Recovery Charge Qrr 320 nC di/dt = 100 A/µs Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. D.U.T. RG = 25 Ω PG IF = 30 A, VGS = 0 RL L PG. 50 Ω VDD RG RG = 10 Ω VGS Wave Form VDD VGS 0 BVDSS ID VDS VDD ID Wave Form VGS (on) 10 % 0 90 % 90 % ID VGS = 20 V → 0 IAS VGS 90 % ID 10 % 0 10 % td (on) tr td (off) tf t t = 1 µs Duty Cycle ≤ 1 % ton toff Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2411, 2SK2411-Z TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 100 120 140 80 60 40 20 0 160 40 60 80 100 120 Tc - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 PW = ID (pulse) 10 0 Di m s 10 ss m DC s ip at io n Pulsed VGS = 10 V 80 VGS = 6 V 70 60 50 VGS = 4 V 40 30 10 ite d 1 160 20 Li m Tc = 25 °C Single Pulse 1 0.1 s µ 1 er 10 s µ d ite ) m 0V i L 1 n) ID (DC) (o S = G DS Po V R t w (a 10 ID - Drain Current - A 90 100 140 Tc - Case Temperature - °C 1000 ID - Drain Current - A 20 10 100 VDS - Drain to Source Voltage - V 0 2 4 6 8 10 12 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed VDS = 10 V 100 TA = –25 °C 25 °C 125 °C 10 1 0 5 10 VGS - Gate to Source Voltage - V 3 2SK2411, 2SK2411-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (t) - Transient Thermal Resistance - °C/W 1000 100 Rth (ch-a) = 83.3 °C/W 10 Rth (ch-c) = 1.67 °C/W 1 0.1 0.01 10 µ 100 µ 1m 10 m 100 m 1 Single Pulse 100 1000 10 1000 TA = –25 °C 25 °C 75 °C 125 °C 100 10 1 1 RDS (on) - Drain to Source On-State Resistance - mΩ VDS = 10 V Pulsed 10 100 Pulsed 50 40 30 ID = 15 A 20 10 0 0 5 10 15 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 50 40 VGS = 4 V 30 VGS = 10 V 20 10 1 10 ID - Drain Current - A 4 60 VGS - Gate to Source Voltage - V 60 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 100 VGS (off) - Gate to Source Cutoff Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS (on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s 2.0 VDS = 10 V ID = 1 mA 1.5 1.0 0.5 0 –50 0 50 100 Tch - Channel Temperature - °C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 80 ISD - Diode Forward Current - A 70 60 VGS = 4 V 50 40 VGS = 10 V 30 20 10 0 –50 –25 ID = 15 A 0 25 50 75 Pulsed 100 10 V VGS = 0 10 1 100 125 150 0 1.0 Tch - Channel Temperature - °C Ciss 1000 Coss Crss 100 10 10 1000 td (on), tr, td (off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz 1 td (off) 100 tf tr 10 td (on) VDD = 30 V VGS = 10 V RG = 10 Ω 1.0 100 0.1 1.0 VDS - Drain to Source Voltage - V 80 di/dt = 50 A/µ s VGS = 0 VDS - Drain to Source Voltage - V trr - Reverse Recovery Diode - ns 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 10 0.1 10 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 3.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 2.0 16 ID = 30 A 70 VDD = 48 V 60 14 12 50 10 VGS 40 8 VDS 30 6 20 4 10 2 VGS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - mΩ 2SK2411, 2SK2411-Z 0 1.0 10 ID - Drain Current - A 100 0 10 20 30 40 50 60 70 80 Qg - Gate Charge - nC 5 2SK2411, 2SK2411-Z SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS = 30 A EA S =9 0m 10 J VDD = 30 V VGS = 20 V → 0 RG = 25 Ω 1.0 10 µ 100 µ 1m L - Inductive Load - H 6 dt - Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 100 10 m VDD = 30 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 30 A 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C 2SK2411, 2SK2411-Z REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. C11745E Quality grade on NEC semiconductor devices. C11531E Semiconductor device mounting technology manual. C10535E IC package manual. C10943X Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. X10679E Power MOS FET features and application switching power supply. D12971E Application circuits using Power MOS FET. D12972E Safe operating area of Power MOS FET. D13085E The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2411, 2SK2411-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5