DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0±0.3 • Low On-Resistance 3.2±0.2 4.5±0.2 2.7±0.2 Drain to Source Voltage VDSS 900 Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±2.0 A Drain Current (pulse)* ID(pulse) ±8.0 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 W V Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg Single Avalanche Current** IAS 2.0 A Single Avalanche Energy** EAS 16.5 mJ * 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 13.5MIN. 3±0.1 15.0±0.3 • Low Ciss Ciss = 485 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package 12.0±0.2 RDS (on) = 7.5 Ω (VGS = 10 V, ID = 1.0 A) 1.3±0.2 1.5±0.2 2.54 0.7±0.1 2.54 1. Gate 2. Drain 3. Source –55 to +150 ˚C PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 2.5±0.1 0.65±0.1 1 2 3 MP-45F (ISOLATED TO-220) Drain Body Diode Gate Source Document No. D10270EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2478 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. Drain to Source On-Resistance RDS (on) Gate to Source Cutoff Voltage VGS (off) 2.5 Forward Transfer Admittance | yfs | 0.6 TYP. MAX. UNIT 7.5 Ω VGS = 10 V, ID = 1.0 A 3.5 V VDS = 10 V, ID = 1 mA S VDS = 20 V, ID = 1.0 A VDS = VDSS, VGS = 0 5.0 TEST CONDITIONS Drain Leakage Current IDSS 100 µA Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0 Input Capacitance Ciss 485 pF VDS = 10 V Output Capacitance Coss 75 pF VGS = 0 Reverse Transfer Capacitance Crss 10 pF f = 1 MHz Turn-On Delay Time td (on) 11 ns ID = 1.0 A Rise Time tr 3 ns VGS = 10 V Turn-Off Delay Time td (off) 35 ns VDD = 150 V Fall Time tf 8 ns RG = 150 Ω Total Gate Charge QG 17 nC ID = 2.0 A Gate to Source Charge QGS 3 nC VDD = 450 V Gate to Drain Charge QGD 8 nC VGS = 10 V Body Diode Forward Voltage VF (S-D) 1.0 V Reverse Recovery Time trr 580 ns IF = 2.0 A, VGS = 0 Reverse Recovery Charge Qrr 2.3 µC di/dt = 50 A/µs Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V IF = 2.0 A, VGS = 0 Test Circuit 2 Switching Time D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS (on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 VDS I D Wave Form t VDD 0 10 % 10 % td (on) tr ton Starting Tch td (off) tf toff t = 1us Duty Cycle ≤ 1 % Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2478 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Pulsed ID(pulse) PW ) d ite V (at = 1 10 w S(o er Di 10 ss RD ipa 0 tio n 0.1 TC = 25 ˚C Single Pulse 1 = 10 0 ID(DC) Po Lim n) 1 GS V 10 s m m s s m ID - Drain Current - A 10 µ ID - Drain Current - A 10 5 VGS = 20 V 10 V 8V 6V s Lim ite d 10 100 1000 VDS - Drain to Source Voltage - V 0 10 20 30 40 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 10 Pulsed VDS = 10 V TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2478 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5(˚C/W) 100 10 Rth(ch-c) = 4.17(˚C/W) 1 0.1 0.01 0.001 10 µ Single Pulse TA = 25 ˚C 100 µ 1m 10 m 100 m 1 10 100 1 000 | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 1.0 VDS = 20 V Pulsed TA= –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.1 0.01 0.01 0.1 1.0 10 RDS(on) - Drain to Source On-State Resistance - Ω PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 10 ID = 5 0 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 5 1.0 ID - Drain Current - A 4 30 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed VGS = 10 V 0.1 20 VGS - Gate to Source Voltage - V 10 VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - A 0 0.01 2A 1A 0.4 A VDS = 10 V ID = 1 mA 5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed ISD - Diode Forward Current - A 10 0 –50 0 50 100 100 10 VGS = 10 V VGS = 0 V 1 VGS = 10 V ID = 1 A 150 0 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz Ciss 100 Coss 10 Crss 1.0 1.0 10 100 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 1 000 1 000 100 tr td(off) tf td(on) 10 1.0 0.1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 1.0 10 ID - Drain Current - A 100 16 800 ID = 2 A VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 50 A/µs VGS = 0 1 000 1.0 0.1 VDD = 150 V VGS = 10 V RG = 10 Ω 10 100 1.0 VDS - Drain to Source Voltage - V 10 000 1.5 1.0 0.5 14 600 12 VDD = 450 V 300 V 150 V 10 VGS 8 400 6 200 4 2 VDS 0 6 12 0 18 Qg - Gate Charge - nC 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 2SK2478 2SK2478 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 10 IAS = 2 A EAS 1.0 VDD = 150 V VGS = 20 V → 0 RG = 25 Ω 100 µ 1m 6.5 mJ VDD = 150 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 2 A 140 120 100 80 60 40 20 10 m L - Inductive Load - H 6 =1 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 100 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 2SK2478 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 7 2SK2478 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8