NEC 2SK2415

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2415 is N-Channel MOS Field Effect Transistor designed
+ 0.2
1.5 – 0.1
(in millimeters)
for high voltage switching applications.
6.5 ± 0.2
5.0 ± 0.2
FEATURES
RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
Ciss = 570 pF TYP.
1 2 3
1.3 MAX.
QUALITY GRADE
2.3 2.3
V
Drain Current (DC)
ID(DC)
±8.0
A
Drain Current (pulse)*
ID(pulse)
±32
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
20
W
Total Power Dissipation (Ta = 25 ˚C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
1.3 MAX.
1 2
3
2.3 2.3
IAS
8.0
A
Single Avalanche Energy**
EAS
6.4
mJ
0.9
0.8
MAX.
MAX.
0.8
1.
2.
3.
4.
–55 to +150 °C
Single Avalanche Current**
1.0 MIN.
1.5 TYP.
±20
5.5 ± 0.2
VGSS
0.5 ± 0.1
10.0 MAX.
Gate to Source Voltage
4
2.3 ± 0.2
MIN.
V
12.0
60
0.8 4.3 MAX.
5.0 ± 0.2
+ 0.2
1.5 – 0.1
6.5 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
VDSS
Gate
Drain
Source
Fin (Drain)
TO-251 (MP-3)
tions.
Drain to Source Voltage
1.
2.
3.
4.
0.75
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
*
0.6 ± 0.1
0.6 ± 0.1
Standard
0.5
• Low Ciss
7.0 MAX. 5.5 ± 0.2
13.7 MIN.
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A)
0.5 ± 0.1
4
1.6 ± 0.2
• Low On-Resistance
2.3 ± 0.2
Gate
Drain
Source
Fin (Drain)
TO-252 (MP-3Z)
Drain
PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13207EJ1V1DS00 (1st edition)
(Previous No. TC-2496)
Date Published December 1997 N CP(K)
Printed in Japan
©
1994
2SK2415, 2SK2415-Z
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-State Resistance
RDS(on)1
0.07
0.10
Ω
VGS = 10 V, ID = 4.0 A
Drain to Source On-State Resistance
RDS(on)2
0.10
0.15
Ω
VGS = 4 V, ID = 4.0 A
Gate to Source Cutoff Voltage
VGS(off)
1.0
1.6
2.0
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
5.0
8.4
S
VDS = 10 V, ID = 4.0 A
Drain Leakage Current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
µA
VGS = ±20 V, VDS = 0
Input Capacitance
Ciss
570
pF
VDS = 10 V
Output Capacitance
Coss
290
pF
VGS = 0
Reverse Transfer Capacitance
Crss
75
pF
f = 1 MHz
Turn-On Delay Time
td(on)
5
ns
ID = 4.0 A
Rise Time
tr
60
ns
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
75
ns
VDD = 30 V
Fall Time
tf
40
ns
RG = 10 Ω
Total Gate Charge
QG
21
nC
ID = 8.0 A
Gate to Source Charge
QGS
2.0
nC
VDD = 48 V
Gate to Drain Charge
QGD
6.5
nC
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.0
V
IF = 8.0 A, VGS = 0
Reverse Recovery Time
trr
85
ns
IF = 8.0 A, VGS = 0
Reverse Recovery Charge
Qrr
200
nC
di/dt = 100 A/µs
Test Circuit 1 Avalanche Capability
D.U.T.
RG = 25 Ω
PG
D.U.T.
L
50 Ω
VGS = 20 → 0 V
Test Circuit 2 Switching Time
RL
VDD
BVDSS
IAS
VDS
ID
RG
RG = 10 Ω
PG.
VGS
0
Starting Tch
Wave
Form
VGS (on)
10 %
0
90 %
90 %
ID
Wave
Form
t = 1 µs
Duty Cycle 1 %
VGS
VDD
ID
t
VDD
VGS
90 %
ID
10 %
0
10 %
td (on)
tr
ton
td (off)
tf
toff
Test Circuit 3 Gate Charge
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2415, 2SK2415-Z
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
24
80
60
40
20
0
20
40
60
80
100 120
140
12
8
4
0
20
40
60
80
100 120
140
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
PW
ID (pulse)
ID - Drain Current - A
16
Tc - Case Temperature - °C
100
d
ite )
im 0 V
L
ID (DC)
1
n)
(o S =
Po
G
DS
R tV
we
(a
r
10
160
20
Tc - Case Temperature - °C
1
40
=
10
10
1
m
0µ
µs
s
s
10
m
s
Di DC
ss
ipa
tio
n
Lim
ite
d
ID - Drain Current - A
dT - Percentage of Rated Power - %
100
160
Pulsed
VGS = 10 V
32
VGS = 6 V
24
VGS = 4 V
16
8
TC = 25 °C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
0
2
4
6
8
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
1000
Pulsed
VDS = 10 V
100
Ta = - 25 °C
25 °C
125 °C
10
1
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
3
2SK2415, 2SK2415-Z
rth(t) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-a) = 125 °C/W
100
10
Rth(ch-c) = 6.25 °C/W
1
0.1
Single Pulse
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
100
10
VDS = 10 V
Pulsed
Ta = - 25 °C
25 °C
75 °C
125 °C
1
1
RDS(on) - Drain to Source On-State Resistance - mΩ
0.1
10
100
80
ID = 4.0 A
60
40
20
0
5
10
15
25
20
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
140
120
VGS = 4 V
80
VGS = 10 V
60
40
20
1
10
ID - Drain Current - A
4
Pulsed
120
DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT
Pulsed
0
140
VGS - Gate to Source Voltage - V
160
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
ID - Drain Current - A
100
VGS(off) - Gate to Source Cutoff Voltage - V
IyfsI- Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - mΩ
PW - Pulse Width - s
2.0
VDS = 10 V
ID = 1 mA
1.5
1.0
0.5
0
- 50 - 25
0
25
50
75
100
125
Tch - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
180
100
160
ISD - Diode Forward Current - A
140
120
VGS = 4 V
100
VGS = 10 V
80
60
40
Pulsed
10
10 V
VGS = 0
1
20
ID = 4.0 A
0
0
- 50
0
50
100
1.0
150
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10 000
1 000
VGS = 0
f = 1 MHz
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
2.0
1 000
Ciss
Coss
100
Crss
100
td(off)
tf
tr
10
td(on)
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1.0
10
1
10
100
0.1
1.0
VDS - Drain to Source Voltage - V
10
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
80
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
100
di/dt = 50 A/µ s
VGS = 0
10
0.1
1.0
ID - Drain Current - A
100
ID = 8.0 A
VDD = 48 V
70
60
50
14
12
VGS
VDS
16
10
40
8
30
6
20
4
10
2
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - mΩ
2SK2415, 2SK2415-Z
0
10
0
10
20
30
40
Qg - Gate Charge - nC
5
2SK2415, 2SK2415-Z
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
10
100
IAS = 8.0 A
EAS
=6
.4 m
J
1.0
VDD = 30 V
VGS = 20 V → 0
0.1 RG = 25 Ω
10 µ
100 µ
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0
IAS 8.0 A
80
60
40
20
0
1m
L - Inductive Load - H
6
dt - Energy Derating Factor - %
IAS - Single Avalanche Energy - mJ
100
10 m
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
2SK2415, 2SK2415-Z
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
2SK2415, 2SK2415-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5