NEC UPA1520B

DATA SHEET
Compound Field Effect Power Transistor
µPA1520B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1520B is N-channel Power MOS FET Array that
PACKAGE DIMENSIONS
built in 4 circuits designed for solenoid, motor and lamp
in millimeters
driver.
4.0
26.8 MAX.
• 4 V driving is possible
2.5
• Large Current and Low On-state Resistance
10 MIN.
10
FEATURES
ID (DC) = ±2.0 A
RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A)
1.4
0.5±0.1
2.54
RDS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)
1.4 0.6±0.1
• Low Input Capacitance Ciss = 220 pF TYP.
1 2 3 4 5 6 7 8 9 10
ORDERING INFORMATION
Type Number
µPA1520BH
CONNECTION DIAGRAM
Package
10 Pin SIP
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
2
Drain to Source Voltage
VDSSNote 1
30
V
Gate to Source Voltage
VGSSNote 2
±20
V
Drain Current (DC)
ID(DC)
±2.0
A/unit
Drain Current (pulse)
ID(pulse)Note 3
±8.0
A/unit
Total Power Dissipation
PT1Note 4
28
W
Total Power Dissipation
PT2Note 5
3.5
W
Channel Temperature
TCH
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. VGS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
5
4
7
6
9
8
1
10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
2. VDS = 0
4. 4 circuits, TC = 25 °C
3. 4 circuits, TA = 25 °C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995
µPA1520B
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0
10
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0
±10
µA
Gate Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1.0 mA
1.0
2.0
V
Forward Transfer Admittance
| Yfs |
VDS = 10 V, ID = 1.0 A
1.0
Drain to Source On-State Resistance
RDS(on)1
VGS = 10 V, ID = 1.0 A
0.10
0.17
Ω
RDS(on)2
VGS = 4.0 V, ID = 1.0 A
0.13
0.25
Ω
Input Capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1.0 MHz
220
pF
Output Capacitance
Coss
220
pF
Reverse Transfer Capacitance
Crss
90
pF
27
ns
125
ns
. 15 V,
=
.
S
Turn-on Delay Time
td(on)
ID = 1.0 A, VGS = 10 V, VDD
Rise Time
tr
RL = 15 Ω
Turn-off Delay Time
td(off)
590
ns
Fall Time
tr
500
ns
Total Gate Charge
QG
14
nC
Gate to Source Charge
QGS
2
nC
Gate to Drain Charge
QGD
5.5
nC
Body Diode Forward Voltage
VF(S-D)
IF = 2.0 A, VGS = 0
1.0
V
Reverse Recovery Time
trr
IF = 2.0 A, VGS = 0, di/dt = 50 A/µs
640
ns
Reverse Recovery Charge
Qrr
3.4
µC
Test Circuit 1
VGS = 10 V, ID = 2.0 A, VDD = 24 V
Switching Time
D.U.T.
VGS
RL
VGS
RG
RG = 10 Ω
PG.
Wave Form
0
VGS (on)
10 %
90 %
VDD
90 %
ID
90 %
ID
VGS
ID
Wave Form
0
0
t = 1 µs
Duty Cycle ≤ 1 %
Test Circuit 2
10 %
tr
ton
Gate Charge
D.U.T.
IG = 2 mA
PG.
10 %
td (on)
t
2
MIN.
50 Ω
RL
VDD
td (off)
tf
toff
µPA1520B
CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
6
4
PT - Total Power Dissipation - W
Laed
Print
Circuit
Boad
5
,,,
,,
,
PT - Total Power Dissipation - W
µ PA1520BH
30
Under same
dissipation in
each circuit
NEC
4 Circuits operation
3 Circuits operation
2 Circuits operation
1 Circuit operation
3
2
1
0
50
100
150
Under same
dissipation in
each circuit
4 Circuits operation
3 Circuits operation
20
2 Circuits operation
1 Circuit operation
10
TC is grease
Temperature on back surface
0
50
100
150
TA - Ambient Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
ID(Pulse)
V)
s
m
s
s
m
ID(DC)
10
Lim
m
ite
n)
S(o
1
G
d (V
RD
dT - Percentage of Rated Power - %
10
=
S=
PW
10
50
0
10
1
s
m
ID - Drain Current - A
100
DC
TC = 25 °C
Single Pulse
0.1
0.1
1
10
100
80
60
40
20
0
100
60
80
100
120 140 160
TC - Case Temperature - °C
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
Pulsed
VDS = 10 V
ID - Drain Current - A
8
ID - Drain Current - A
40
VDS - Drain to Source Voltage - V
100
10
TA = 125 °C
75 °C
25 °C
-25 °C
1.0
Pulsed
VGS = 20 V
10 V
VGS = 4 V
6
4
2
0.1
0
20
2
4
VGS- Gate to Source Voltage - V
6
0
0.5
1.0
1.5
2.0
VDS - Drain to Source Voltage - V
3
µPA1520B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1 000 Single Pulse.
For each Circuit
Rth(CH-A) 4Circuits
3Circuits
2Circuits
1Circuit
100
Rth(CH-C)
10
1.0
0.1
100µ
1m
10 m
100 m
1
10
100
1 000
100
10
VDS = 10 V
Pulsed
TA = -25 °C
25 °C
75 °C
125 °C
1.0
0.1
0.1
10
1.0
RDS(on) - Drain to Source On-State Resistance - mΩ
ID- Drain Current - A
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
Pulsed
100
0
200
VGS = 4 V
100
0
VGS = 10 V
1.0
ID - Drain Current - A
20
10
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
300
ID = 0.4 A
1A
2A
200
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
VGS(off) - Gate to Source Cutoff Voltage - V
yfs - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - mΩ
PW - Pulse Width - sec
VDS = 10 V
ID = 1 mA
2
1
0
- 50
0
50
100
TCH - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
200
VGS = 4 V
150
VGS =10 V
100
50
ISD - Diode Forward Current - A
ID = 1 A
0
- 50
0
100
50
10
VGS = 10 V
1.0
VGS = 0
0.1
0.01
150
0
SWITCHING CHARACTERISTICS
VGS = 0
f = 1 MHz
Coss
Ciss
Crss
100
10
0.1
1
10
1 000
td(on), tr, td(off), tf - Switching Time - ns
1 000
100
td(off)
tf
tr
100
10
0.01
0.1
10
D
=
6
15 V
V
24
V
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
ID = 2 A
VGS
10
20
10
1.0
ID - Drain Current - A
10
6
4
2
VDS
0
0.1
8
VD
di/dt = 50 A/µ s
VGS = 0
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
1.0
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
0.01
VDD 15 V
VGS = 10 V
RG =10 Ω
td(on)
VDS - Drain to Source Voltage - V
10 000
1.5
1.0
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
0.5
TCH - Channel Temperature - °C
0
2
6
10
0
14
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - mΩ
µPA1520B
Qg - Gate Charge - nC
5
µPA1520B
REFERENCE
Document Name
6
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
IEI-1207
Semiconductor device package manual
IEI-1213
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
MF-1134
Power MOS FET features and application switching power supply
TEA-1034
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
µPA1520B
[MEMO]
7
µPA1520B
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8