DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3306 Isolated TO-220 (MP-45F) a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. (Isolated TO-220) FEATURES • Low gate charge : ★ QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Avalanche capability ratings • Isolated TO-220(MP-45F) package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 500 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±30 V ID(DC) ±5 A ID(pulse) ±20 A Total Power Dissipation (TC = 25°C) PT 35 W Total Power Dissipation (TA = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Drain Current (DC) Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 5.0 A Single Avalanche Energy Note2 EAS 125 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14004EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 2SK3306 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS ★ SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Leakage Current IDSS 100 µA VDS = 500 V, VGS = 0 V Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0 V 3.5 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 2.5 A Ω VGS = 10 V, ID = 2.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Gate to Source Cut-off Voltage ★ Forward Transfer Admittance ★ Drain to Source On-state Resistance ★ VGS(off) 2.5 | yfs | 1.0 3.0 RDS(on) 1.35 Input Capacitance Ciss 700 pF Output Capacitance Coss 115 pF Reverse Transfer Capacitance Crss 6 pF Turn-on Delay Time td(on) 16 ns VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V, tr 3 ns RG = 10 Ω, RL = 60 Ω td(off) 33 ns tf 5.5 ns Rise Time Turn-off Delay Time Fall Time 1.5 ★ Total Gate Charge QG 13 nC ★ Gate to Source Charge QGS 4 nC ★ Gate to Drain Charge QGD 4.5 nC ★ Body Diode Forward Voltage VF(S-D) 1.0 V IF = 5.0 A, VGS = 0 V Reverse Recovery Time trr 0.7 µs IF = 5.0 A, VGS = 0 V, di/dt = 50 A / µs Reverse Recovery Charge Qrr 3.3 µC ★ TEST CIRCUIT 1 AVALANCHE CAPABILITY VDD = 400 V, VGS(on) = 10 V, ID = 5.0 A TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10 % 0 10 % Wave Form τ VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet D14004EJ2V0DS00 tr td(off) td(on) ton tf toff 2SK3306 TYPICAL CHARACTERISTICS(TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 80 60 100 120 140 160 40 30 20 10 0 Tc - Case Temperature - ˚C 20 40 60 80 100 120 140 160 Tc - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 100 S ID (pulse) PW S RD t VG (a 10 10 0 1m ID (DC) we rD 1 iss ip 1 io n Li µs µs 10 V VGS = 20 V 8 8.0 V 6 4 VGS = 6.0 V 2 m Tc = 25 ˚C Single Pulse 0.1 at 10 s 1 10 0 m s 0 m s Po = ID - Drain Current - A ID - Drain Current - A Pulsed 10 d ite ) im 0 V L ) 1 n (o = ite d 10 100 1000 VDS - Drain to Source Voltage - V 0 4 8 12 16 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 1000 Pulsed ID - Drain Current - A 100 10 1 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.1 0.01 0.001 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D14004EJ2V0DS00 3 2SK3306 rth(ch-C) (t) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 62.5 ˚C/W 10 Rth(ch-C) = 3.57 ˚C/W 1 0.1 Tc = 25 ˚C Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 10 1 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.1 VDS = 10 V Pulsed 0.01 0.01 3.0 0.1 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4.0 3.0 ID = 5.0 A 2.0 1.0 0.0 Pulsed 0 5 10 15 25 20 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 1.0 1 10 4.0 VDS = 10 V ID = 1 mA 3.0 2.0 1.0 0.0 ID - Drain Current - A 4 ID = 2.5 A ID - Drain Current - A Pulsed 0 0.1 100 10 VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω IyfsI - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - W PW - Pulse Width - s –50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14004EJ2V0DS00 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 3.0 100 ISD - Diode Forward Current - A ID = 5.0 A 2.0 ID = 2.5 A 1.0 VGS = 10 V 0.0 –50 0 50 100 Pulsed 10 1 VGS = 10 V VGS = 0 V 0.1 0.01 0.0 150 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1.0 MHz Ciss 1 000 Coss 100 10 Crss 1 100 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.1 1 10 100 tr td(off) td(on) tf 10 1 VDD = 150 V VGS = 10 V RG = 10 Ω 0.1 1000 0.1 1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 2000 800 di/dt = 100 A/µs VGS = 0 V ID = 5.0 A VDS - Drain to Source Voltage - V 1800 trr - Reverse Recovery Time - ns 1.5 1.0 1600 1400 1200 1000 800 600 400 200 14 700 VGS VDD = 400 V 250 V 125 V 600 500 12 10 400 8 300 6 4 200 VDS 2 100 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - W 2SK3306 0 0.1 1 10 100 2 4 6 8 10 12 14 Qg - Gate Charge - nC ID - Drain Current - A Data Sheet D14004EJ2V0DS00 5 2SK3306 SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE ID(peak) = IAS RG = 25 Ω VGS = 20 V → 0 V VDD = 150 V 125 EAS = 125 mJ 100 75 50 25 0 25 50 75 100 125 150 175 100 IAS - Single Avalanche Current - A EAS - Single Avalanche Energy - mJ 150 10 IAS = 5.0 A EAS = 12 5m J 1 0.1 1.00E–04 Starting Tch - Starting Channel Temperature - ˚C 6 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25 ˚C Data Sheet D14004EJ2V0DS00 1.00E–03 1.00E–02 L - Inductive Load - H 1.00E–01 2SK3306 PACKAGE DRAWING (Unit: mm) Isolated TO-220(MP-45F) 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 EQUIVALENT CIRCUIT 12.0±0.2 3±0.1 4±0.2 0.7±0.1 1.3±0.2 1.5±0.2 2.54 2.54 Body Diode Gate 13.5 MIN. 15.0±0.3 Drain Source 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source 1 2 3 ★ Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D14004EJ2V0DS00 7 2SK3306 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8