DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB 2SK3573-S TO-262 2SK3573-ZK TO-263 2SK3573-Z TO-220SMD Note designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Note TO-220SMD package is produced only in Japan. • 4.5 V drive available • Low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low gate charge QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A) • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±83 A ID(pulse) ±332 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 105 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16259EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 2002 2SK3573 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 42 A 27 RDS(on)1 VGS = 10 V, ID = 42 A 2.9 4.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 42 A 3.8 6.0 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 4000 pF Output Capacitance Coss VGS = 0 V 1550 pF Reverse Transfer Capacitance Crss f = 1 MHz 570 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 42 A 23 ns tr VGS = 10 V 23 ns td(off) RG = 10 Ω 110 ns 40 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 68 nC Gate to Source Charge QGS VGS = 10 V 12 nC Gate to Drain Charge QGD ID = 83 A 18 nC VF(S-D) IF = 83 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 77 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 115 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet D16259EJ2V0DS 2SK3573 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW = 10 µs ID(pulse) 100 100 µs ID(DC) DC 1 ms 10 10 ms Power Dissipation Lim ited 1 T C = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A R DS(on) Lim ited Rth(ch-A) = 83.3°C/W Single pulse 10 Rth(ch-C) = 1.19°C/W 1 0.1 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16259EJ2V0DS 3 2SK3573 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 350 V DS = 10 V Pulsed Pulsed ID - Drain Current - A ID - Drain Current - A VGS = 10 V 300 250 4.5 V 200 150 100 100 10 T ch = 150°C 75°C 25°C −55°C 1 0.1 50 0.01 0 0 0.5 1 3 4 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 -50 0 50 100 | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 VDS = 10 V Pulsed T ch = −55°C 25°C 75°C 150°C 10 1 0.1 150 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 8 VGS = 4.5 V 6 4 10 V 2 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 2 VGS - Gate to Source Voltage - V 0 10 ID - Drain Current - A 4 1 VDS - Drain to Source Voltage - V 3 RDS(on) - Drain to Source On-state Resistance - mΩ 0 1.5 Pulsed 8 6 4 ID = 42 A 2 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D16259EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 7 ID = 42 A Pulsed 6 5 Ciss, Coss, Crss - Capacitance - pF VGS = 4.5 V 4 3 10 V 2 1 0 C iss 1000 C oss C rss V GS = 0 V f = 1 MHz 100 -50 0 50 100 0.1 150 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 10 20 V DD = 10 V V GS = 10 V R G = 10 Ω td(off) 100 tf td(on) tr 10 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V V DD = 16 V 10 V 16 8 6 12 V GS 8 4 4 2 V DS ID = 83 A 0 0 1 0.1 1 10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3573 0 100 20 40 60 80 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Pulsed 100 V GS = 10 V 0V 10 1 0.1 100 10 di/dt = 100 A/µs V GS = 0 V 1 0.01 0 0.5 1 1.5 0.1 1 10 100 ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D16259EJ2V0DS 5 2SK3573 ★ PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 3.0±0.3 φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 10 TYP. 1.3±0.2 4 4 2 1 3 0.5±0.2 0.75±0.1 2.54 TYP. 12.7 MIN. 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 2.8±0.2 1.3±0.2 8.5±0.2 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 0.5±0.2 0.75±0.3 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 4) TO-220SMD (MP-25Z) 1.35±0.3 3) TO-263 (MP-25ZK) 10.0±0.2 0.4 8.4 TYP. 4 4.45±0.2 Note 4.8 MAX. 10 TYP. 1.3±0.2 1.3±0.2 0.2 0 to 2.54 0.75±0.3 2.54 TYP. 8.5±0.2 3 P. . TY R TYP 5 . 0 R .8 2.54 TYP. 0 3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.8±0.2 2.5 2 0.5±0.2 8o 0.25 1 3.0±0.5 1.4±0.2 2 1.1±0.4 1 0.5± 0.7±0.15 1.0±0.5 0.025 to 0.25 2.45±0.25 9.15±0.2 15.25±0.5 4 8.0 TYP. No plating 2.8±0.2 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain (D) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device Gate (G) Body Diode operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Source (S) 6 Data Sheet D16259EJ2V0DS 2SK3573 [MEMO] Data Sheet D16259EJ2V0DS 7 2SK3573 • The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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