DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3297 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3297 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power PART NUMBER PACKAGE 2SK3297 Isolated TO-220 supply, AC adapter. (Isolated TO-220) FEATURES •Low gate charge QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A) •Gate voltage rating ±30 V •Low on-state resistance RDS(ON) = 1.6 Ω MAX. (VGS = 10 V, I D = 2.5 V) •Avalanche capability ratings •Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (T A = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current(DC) (TC = 25°C) ID(DC) ±5.0 A ID(pulse) ±20 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W Channel Temperature Tch 150 °C Drain Current(pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 5.0 A Single Avalanche Energy Note2 EAS 16.7 mJ Storage Temperature Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 →0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14058EJ1V0DS00 (1st edition) Date Published November 2000 NS CP (K) Printed in Japan © 1999, 2000 2SK3297 ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2.5 A 1.5 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 2.5 A 1.3 Input Capacitance Ciss VDS = 10 V 750 pF Output Capacitance Coss VGS = 0 V 130 pF Reverse Transfer Capacitance Crss f = 1 MHz 9.7 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 2.5 A 17 ns Rise Time tr VGS(on) = 10 V 3 ns Turn-off Delay Time td(off) RG = 10 Ω 37 ns Fall Time tf 10 ns Total Gate Charge QG VDD = 450 V 18 nC Gate to Source Charge QGS VGS = 10 V 4 nC Gate to Drain Charge QGD ID = 5.0 A 7 nC Body Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 1.4 µs Reverse Recovery Charge Qrr di/dt = 50 A/µs 5.3 µC S Ω 1.6 TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% Data Sheet D14058EJ1V0DS tr td(off) td(on) ton tf toff 2SK3297 TYPICAL CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 12 VGS =10 V 8.0 V ID - Drain Current - A ID - Drain Current - A 10 Pulsed VDS = 10 V 6.0 V 8 6 4 10 Tch = −25˚C 25˚C 75˚C 125˚C 1 0.1 2 0 Pulsed 10 0 20 30 0.01 0 40 VDS - Drain to Source Voltage - V 3 2 1 0 50 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA 0 −50 150 10 1 Tch = −25˚C 25˚C 75˚C 125˚C 0.1 0.1 4 Pulsed 3 ID = 5.0 A 2.5 A 1 0 5 10 15 20 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 VDS = 10 V Pulsed 10 1 Tch - Channel Temperature - ˚C 2 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4 10 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 Pulsed 3 VGS = 10 V 20 V 2 1 0 0.1 VGS - Gate to Source Voltage - V 1 10 100 ID - Drain Current - A Data Sheet D14058EJ1V0DS 3 2SK3297 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 10 V Pulsed ISD - Diode Forward Current - A 3 ID = 5.0 A 2.5 A 2 1 0 −50 0 50 1 VGS = 10 V 0V 0.1 0.01 0 150 0.5 1 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 Ciss 100 Coss 10 1 0.1 10 Tch - Channel Temperature - ˚C 10000 Ciss, Coss, Crss - Capacitance - pF 100 Pulsed Crss 1 10 100 100 td(off) td(on) tf 10 tr VDD = 150 V VGS = 10 V RG = 10 Ω 1 0.1 1000 10 1 VDS - Drain to Source Voltage - V ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 10000 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 16 1000 100 0.1 di/dt = 50 A/µs VGS = 0 V 1 10 ID = 5.0 A 14 600 10 8 400 VGS 6 200 4 VDS 2 0 0 8 16 24 QG - Gate Charge - nC ISD - Diode Forward Current - A 4 12 VDD = 450 V 300 V 150 V Data Sheet D14058EJ1V0DS 0 32 VGS - Gate to Source Voltage - V 4 td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK3297 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 40 100 80 60 40 20 0 0 20 40 60 80 120 140 100 30 20 10 0 0 160 20 Tch - Channel Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID(pulse) P W d ite im 0 V) )L (on =1 10 S RD VGS (@ 0.1 Di ss ipa tio n Lim ite d 30 ms 100 ms TC = 25˚C Single Pulse 1 =1 0µ s 10 0µ s 1m 3m s s 10 m s ID(DC) Po we r 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 62.5˚C/W rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 10 Rth(ch-C) = 3.57˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14058EJ1V0DS 5 2SK3297 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 IAS = 5.0 A EAS =1 6.7 mJ 1 VDD = 150 V VGS = 20 → 0 V RG = 25 Ω 0.1 Starting Tch = 25°C 0.01 0.1 1 10 80 60 40 20 0 25 50 75 100 125 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - mH 6 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 5.0 A 100 Data Sheet D14058EJ1V0DS 150 2SK3297 PACKAGE DRAWING(Unit: mm) Isolated TO-220 (MP-45F) 10.0±0.3 φ 3.2±0.2 4.5±0.2 2.7±0.2 0.7±0.1 2.54 TYP. 12.0±0.2 Drain 1.3±0.2 1.5±0.2 2.54 TYP. Body Diode Gate 13.5 MIN. 4±0.2 3±0.1 15.0±0.3 EQUIVALENT CIRCUIT Source 2.5±0.1 0.65±0.1 1.Gate 2.Drain 3.Source 1 2 3 Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D14058EJ1V0DS 7 2SK3297 • The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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