DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1706TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 1 0.8 ±0.2 0.05 ±0.05 0.10 S 1.27 TYP. 0.40 +0.10 –0.05 4 2.0 ±0.2 2.9 MAX. PACKAGE Power HSOP8 0.12 M 1.1 ±0.2 ORDERING INFORMATION µPA1706TP 4.4 ±0.15 0.15 S 1 PART NUMBER 6.0 ±0.3 4 5.2 +0.17 –0.2 +0.10 –0.05 1.49 ±0.21 1.44 TYP. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) 9 4.1 MAX. 8 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC)1 ±28 A Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (TC = 25°C) Total Power Dissipation Note1 ID(DC)2 ±17 A ID(pulse) ±100 A PT1 39 W PT2 3 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C IAS 19 A EAS 36.1 mJ Single Avalanche Current Note3 Single Avalanche Energy Note3 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15850EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 µPA1706TP ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 7.0 A 10 22 RDS(on)1 VGS = 10 V, ID = 7.0 A 5.8 7.8 mΩ RDS(on)2 VGS = 4.5 V, ID = 7.0 A 7.0 10.0 mΩ RDS(on)3 VGS = 4.0 V, ID = 7.0 A 8.0 12.0 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 3000 pF Output Capacitance Coss VGS = 0 V 950 pF Reverse Transfer Capacitance Crss f = 1 MHz 380 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 13 A 20 ns tr VGS = 10 V 20 ns td(off) RG = 10 Ω 80 ns 30 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 56 nC Gate to Source Charge QGS VGS = 10 V 9 nC Gate to Drain Charge QGD ID = 13 A 14 nC VF(S-D) IF = 13 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 13 A, VGS = 0 V 43 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 50 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet G15850EJ1V0DS td(on) tr ton td(off) tf toff µPA1706TP TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 40 30 20 10 0 100 120 140 160 20 TC - Case Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 PW ID(DC) d ite ) im 0 V )L 1 on S = ( S RD t VG (a 10 = 1 m s 10 m P Li ow m e ite r D d is s sip at io n 1 TC = 25˚C Single Pulse 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) 100 10 Rth(ch-C) = 3.21˚C/W 1 0.1 Single Pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15850EJ1V0DS 3 µPA1706TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed Pulsed 4.5 V VGS = 10 V 50 ID - Drain Current - A ID - Drain Current - A 4.0 V TA = 125˚C 75˚C 25˚C −25˚C 10 1 40 30 20 0.1 0.01 10 VDS = 10 V 1 0 3 2 4 0 100 TA = −25˚C 25˚C 75˚C 125˚C 10 1 10 1 0.1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 15 10 VGS = 4.0 V 4.5 V 5 0 0.1 10 V 1 10 100 Pulsed 40 30 20 10 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 0.8 0.6 ID = 7.0 A 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V 1000 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S VDS =10 V Pulsed RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 0.4 0.2 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.6 VDS = 10 V ID = 1 mA 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 −40 −20 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G15850EJ1V0DS RDS(on) - Drain to Source On-state Resistance - mΩ µPA1706TP SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 14 VGS = 4.0 V 4.5 V 12 10 V 10 8 6 4 2 0 -40 -20 IF - Diode Forward Current - A 16 1000 ID = 7.0 A 0 Pulsed 100 0V VGS =10 V 10 1 0.1 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 1.0 0.8 1.2 1.4 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns 1000 Ciss 1000 Coss Crss 100 1 10 td(off) 100 tf tr td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 100 1 VDS - Drain to Source Voltage - V di/dt = 100 A/µ s VGS = 0 V 100 10 1 0.1 1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 10 100 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 13 A 30 VDD = 24 V 15 V 6V 12 10 VGS 20 8 6 4 10 2 VDS 100 0 20 40 60 80 VGS - Gate to Source Voltage - V 10 0.1 trr - Reverse Recovery Diode - ns Ciss, Coss, Crss - Capacitance - pF 10000 0 100 QG - Gate Charge - nC Data Sheet G15850EJ1V0DS 5 µPA1706TP [MEMO] 6 Data Sheet G15850EJ1V0DS µPA1706TP [MEMO] Data Sheet G15850EJ1V0DS 7 µPA1706TP • The information in this document is current as of May, 2002. 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