DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 19.0 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 2290 pF TYP. • Built-in gate protection diode ORDERING INFORMATION (TO-251) PART NUMBER PACKAGE 2SK2982 TO-251 2SK2982-Z TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±30 A ID(pulse) ±120 A Total Power Dissipation (TA = 25°C) PT 1.0 W Total Power Dissipation (TC = 25°C) PT 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (Pulse) Note (TO-252) Note PW ≤ 10 µs, Duty cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12354EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998 2SK2982 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 15 A 9.8 12.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 15 A 13.2 16.5 mΩ RDS(on)3 VGS = 4.0 V, ID = 15 A 15.0 19.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 15 A 13 27 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 2290 pF Output Capacitance Coss VGS = 0 V 940 pF Reverse Transfer Capacitance Crss f = 1 MHz 440 pF Turn-on Delay Time Td(on) ID = 15 A 40 ns VGS(on) = 10 V 427 ns td(off) VDD = 15 V 174 ns Fall Time Tf RG = 10 Ω 226 ns Total Gate Charge QG ID = 30 A 53 nC Gate to Source Charge QGS VDD = 24 V 6.3 nC Gate to Drain Charge QGD VGS = 10 V 16 nC VF(S-D) IF = 30 A, VGS = 0 V 0.8 V Reverse Recovery Time Trr IF= 30A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = 100A/µs 50 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Body Diode forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. VDD ID 90% 90% 10% 0 10% Wave Form τ = 1 µs Duty Cycle ≤ 1% tr td(off) td(on) ton IG = 2 mA RL 50 Ω VDD 90% ID τ 2 VGS(on) 10% ID VGS 0 S tf toff Data Sheet D12354EJ3V0DS 2SK2982 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 0 ★ 20 40 60 80 60 50 40 30 20 10 0 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 200 ID(pulse) 100 PW d ite ) Lim 0 V n) (o =1 DS S R VG ID(DC) t (a 1 10 Po we rD 10 0 ip 50 m 0 µs s m s 10 iss = m s at io n Li m ite TC = 25˚C 120 4.5 V VGS =10 V 80 4.0 V 40 d 1 Single Pulse 0.1 160 DC 1 10 100 0 0 0.5 1.0 1.5 2.0 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed Tch = −25˚C 25˚C 125˚C 100 10 1 0 VDS = 10 V 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet D12354EJ3V0DS 3 2SK2982 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 4.17 ˚C/W 1 0.1 0.01 0.001 Single Pulse TC = 25˚C 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C 10 1 1 100 10 1000 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A 4 30 Pulsed 20 VGS = 4.0 V 0 0.2 4.5 V 10 V 10 1 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ID = 15 A 10 0 0 5 10 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S 1000 RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 −50 0 50 100 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D12354EJ3V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.5 V VGS = 4.0 V 15 10 V 10 5 ID = 15 A 0 −50 50 0 100 100 VGS = 0 V 10 1 0.1 150 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns Coss Crss 100 1 10 100 tf td(off) 100 td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 10 1 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/µs VGS = 0 V 100 10 1 0.1 tr VDS - Drain to Source Voltage - V 1 10 100 40 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 1000 1000 trr - Reverse Recovery Time - ns 1000 VGS = 0 V f = 1 MHz Ciss 10 0.1 1.5 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 10000 Pulsed 0.02 0 ID = 30 A 14 30 12 VGS 20 VDD = 24 V 15 V 6V 10 8 6 4 10 2 VDS 00 20 40 60 80 VGS - Gate to Source Voltage - V 20 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK2982 0 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D12354EJ3V0DS 5 2SK2982 PACKAGE DRAWINGS (Unit: mm) 1.1±0.2 1.1±0.2 +0.2 0.5-0.1 +0.2 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 1.5-0.1 0.5±0.1 1.0 MIN. 1.5 TYP. 4 2.3±0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.5 3 13.7 MIN. 2 5.5±0.2 1 7.0 MAX. 1.6±0.2 4 5.5±0.2 10.0 MAX. +0.2 0.5±0.1 0.8 4.3 MAX. 5.0±0.2 6.5±0.2 5.0±0.2 2.3±0.2 1.5-0.1 6.5±0.2 +0.2 TO-252(MP-3Z) 2.0 MIN. TO-251(MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D12354EJ3V0DS 2SK2982 [MEMO] Data Sheet D12354EJ3V0DS 7 2SK2982 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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