DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700TP which has a heat spreader is N-Channel 8 5 MOS Field Effect Transistor designed for DC/DC converter 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 1 0.8 ±0.2 0.05 ±0.05 +0.10 –0.05 2.9 MAX. Power HSOP8 0.12 M 1.1 ±0.2 4 2.0 ±0.2 µPA2700TP 0.10 S 1.27 TYP. 0.40 ORDERING INFORMATION PACKAGE 4.4 ±0.15 0.15 S 1 PART NUMBER 6.0 ±0.3 4 5.2 +0.17 –0.2 +0.10 –0.05 1.49 ±0.21 FEATURES • Low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) 1.44 TYP. and power management application of notebook computer. 9 4.1 MAX. 8 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) ★ Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC)1 ±42 A ID(DC)2 ±20 A ID(pulse) ±120 A PT1 37 W PT2 3 W Tch 150 °C Tstg –55 to + 150 °C IAS 22 A EAS 48.4 mJ Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Note1 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15851EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 2002 µPA2700TP ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance MIN. TYP. MAX. UNIT 10 µA ±100 nA 2.5 V VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 9.0 A 11 21.5 RDS(on)1 VGS = 10 V, ID = 9.0 A 4.2 5.3 mΩ RDS(on)2 VGS = 4.5 V, ID = 9.0 A 5.5 7.3 mΩ RDS(on)3 VGS = 4.0 V, ID = 9.0 A 6.3 8.4 mΩ S Input Capacitance Ciss VDS = 10 V 2600 pF Output Capacitance Coss VGS = 0 V 1000 pF Reverse Transfer Capacitance Crss f = 1 MHz 340 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 9.0 A 20 ns tr VGS = 10 V 24 ns td(off) RG = 10 Ω 75 ns 22 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 26 nC Gate to Source Charge QGS VGS = 5 V 7 nC Gate to Drain Charge QGD ID = 17 A 11 nC VF(S-D) IF = 17 A, VGS = 0 V 0.8 Reverse Recovery Time trr IF = 17 A, VGS = 0 V 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 51 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω 1.2 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE 2 10% 0 10% Wave Form VDD PG. 90% VDS VGS 0 D.U.T. IG = 2 mA RL 50 Ω VDD Data Sheet G15851EJ2V0DS td(on) tr ton td(off) tf toff µPA2700TP TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 100 120 140 35 30 25 20 15 10 5 0 160 0 TC - Case Temperature - ˚C 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 10 PW d ite ) im 0 V )L 1 n o S( S = RD (VG PW ID(DC) = 42 A = 10 = 1 m s m s Power Dissipation Limited 1 PW = 100 ms TC = 25˚C Single Pulse 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/ W ID - Drain Current - A ID(pulse) = 120 A 100 Single Pulse Rth(ch-A) = 89.3˚C/W 100 10 Rth(ch-C) = 3.13˚C/W 1 0.1 Remark 0.01 0.0001 0.001 0.01 Rth(ch-A) : Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), TA = 25˚C Rth(ch-C) : TC = 25˚C 0.1 1 PW - Pulse Width - s Data Sheet G15851EJ2V0DS 10 100 1000 3 100 VDS = 10 V Pulsed TA = −25˚C 25˚C 75˚C 150˚C 10 1 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15 10 5 ID = 9.0 A 0 0 VGS = 4.0 V 15 4.5 V 10 10 V 5 0 0.1 1 10 100 15 20 1000 3 VDS = 10 V ID = 1 mA 2 1 0 −50 −25 ID - Drain Current - A 0 25 50 75 100 125 150 Tch - Channel Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 10 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 20 Pulsed 5 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ µPA2700TP 80 Pulsed Pulsed 70 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 10 TA = 150˚C 75˚C 25˚C −25˚C 1 0.1 60 50 40 4.5 V 4.0 V 30 20 10 0.01 0 1 2 3 VDS = 10 V 4 5 0 0.0 VGS - Gate to Source Voltage - V 4 Data Sheet G15851EJ2V0DS 0.6 0.2 0.4 VDS - Drain to Source Voltage - V µPA2700TP SOURCE TO DRAIN DIODE FORWARD VOLTAGE 20 100 ISD - Diode Forward Current - A Pulsed 15 10 VGS = 4 V 4.5 V 10 V 5 0 −50 Pulsed VGS = 0 V 10 1 0.1 0.01 −25 0 25 50 75 100 125 0 150 0.2 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0.8 1.2 1.0 1.4 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 10 0.1 1 10 td(off) 100 tr tf td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 VDS - Drain to Source Voltage - V di/dt = 100 A/ µ s VGS = 0 V 100 10 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 10 1 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 0.6 1000 10000 Ciss, Coss, Crss - Capacitance - pF 0.4 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 100 8 35 7 VGS VDD = 24 V 15 V 6V 30 25 6 5 20 4 15 3 10 2 VDS 5 1 ID = 17 A 0 0 ID - Drain Current - A 4 8 12 16 20 24 28 32 36 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 40 QG - Gate Charge - nC Data Sheet G15851EJ2V0DS 5 µPA2700TP [MEMO] 6 Data Sheet G15851EJ2V0DS µPA2700TP [MEMO] Data Sheet G15851EJ2V0DS 7 µPA2700TP • The information in this document is current as of May, 2002. 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