DATA SHEET COMPOUND TRANSISTOR AA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC(DC) 100 mA Collector current (Pulse) IC(pulse) * 200 mA Total power dissipation PT 250 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 50 V, IE = 0 DC current gain hFE1 ** VCE = 5.0 V, IC = 5.0 mA 35 60 DC current gain hFE2 ** VCE = 5.0 V, IC = 50 mA 80 230 Collector saturation voltage MAX. Unit 100 nA 100 − − VCE(sat) ** IC = 5.0 mA, IB = 0.25 mA 0.05 0.2 V Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.7 0.9 V High level input voltage VIH ** VCE = 0.2 V, IC = 5.0 mA 1.0 V 2.0 Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 7 10 13 kΩ Turn-on time ton VCC = 5 V, RL = 1 kΩ 0.2 µs Storage time tstg VI = 5 V, PW = 2 µs 5.0 µs toff duty cycle≤2 % 6.0 µs Turn-off time ** PW ≤ 350 µs, duty cycle ≤ 2 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16159EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AA1A3Q TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet D16159EJ1V0DS AA1A3Q Data Sheet D16159EJ1V0DS 3 AA1A3Q • The information in this document is current as of July, 2001. 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