NEC AA1A3Q

DATA SHEET
COMPOUND TRANSISTOR
AA1A3Q
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
• On-chip bias resistor
(R1 = 1.0 kΩ, R2 = 10 kΩ)
• Complementary transistor with AN1A3Q
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = 50 V, IE = 0
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
35
60
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
80
230
Collector saturation voltage
MAX.
Unit
100
nA
100
−
−
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.05
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100 µA
0.7
0.9
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
1.0
V
2.0
Input resistance
R1
0.7
1.0
1.3
kΩ
E-to-B resistance
R2
7
10
13
kΩ
Turn-on time
ton
VCC = 5 V, RL = 1 kΩ
0.2
µs
Storage time
tstg
VI = 5 V, PW = 2 µs
5.0
µs
toff
duty cycle≤2 %
6.0
µs
Turn-off time
** PW ≤ 350 µs, duty cycle ≤ 2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16159EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
AA1A3Q
TYPICAL CHARACTERISTICS (Ta = 25°°C)
2
Data Sheet D16159EJ1V0DS
AA1A3Q
Data Sheet D16159EJ1V0DS
3
AA1A3Q
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