NEC NE434S01

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
PACKAGE DIMENSIONS
(Unit: mm)
The NE434S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
2.0 ± 0.2
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
2.
0
1
±
•
0.
2
FEATURES
Super Low Noise Figure & High Associated Gain
E
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
Tape & reel 1000 pcs./reel
NE434S01-T1B
Tape & reel 4000 pcs./reel
1.
2.
3.
4.
3
E
0.65 TYP.
Source
Drain
Source
Gate
1.9 ± 0.2
1.6
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
ID
IDSS
mA
Drain Current
4
MARKING
NE434S01-T1
0.5 TYP.
2
Gate Width: Wg = 280 Pm
Total Power Dissipation
Ptot
300
mW
Channel Temperature
Tch
125
qC
Storage Temperature
Tstg
–65 to +125
qC
1.5 MAX.
•
2.0 ± 0.2
NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz
0.125 ± 0.05
0.4 MAX.
4.0 ± 0.2
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC
TYP.
MAX.
Unit
VDS
2
2.5
V
Drain Current
ID
15
20
mA
Input Power
Pin
0
dBm
Drain to Source Voltage
Document No. P11344EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
SYMBOL
MIN.
©
1996
NE434S01
ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qC)
PARAMETER
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
0.5
10
PA
VGS = ð3 V
VDS = 2 V, VGS = 0 V
Gate to Source Leak Current
ISGO
Saturated Drain Current
IDSS
20
80
150
mA
VGS(off)
ð0.2
ð0.9
ð2.5
V
VDS = 2 V, ID = 100 PA
Transconductance
gm
70
85
mS
VDS = 2 V, ID = 14 mA
Noise Figure
NF
dB
VDS = 2 V, ID = 15 mA,
Associated Gain
Ga
dB
f = 4 GHz
Gate to Source Cutoff Voltage
2
SYMBOL
0.35
13.0
15.5
0.45
NE434S01
TYPICAL CHARACTERISTICS (TA = 25 qC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
VGS = 0 V
400
ID - Drain Current - mA
Ptot - Total Power Dissipation - mW
100
300
200
–0.2 V
60
–0.4 V
40
–0.6 V
20
100
0
80
50
100
150
200
0
250
1
3
4
5
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
100
24
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
2
|S21S| - Forward Insertion Gain - dB
VDS = 2 V
80
ID - Drain Current - mA
2
60
40
20
0
–2.0
–1.0
VDS = 2 V
ID = 15 mA
20
16
VGS - Gate to Source Voltage - V
|S21S|2
MAG.
12
8
4
0
MSG.
1
2
4
6
8 10
14
20 30
f - Frequency - GHz
Gain Calculations
MSG. =
MAG. =
~S21~
~S12~
~S21~
2
(K r—K ð1)
~S12~
1 + ~'~ ð ~S11~ ð ~S22~
2
K=
2
2
2~S12~~S21~
' = S11˜S22 ð S21˜S12
3
NE434S01
S-PARAMETERS
VDS = 2 V, ID = 15 mA
START 2 Ghz, STOP 18 Ghz, STEP 500 Mhz
Marker
1: 4 GHz
2: 8 GHz
3: 12 GHz
4: 16 GHz
5: 18 GHz
S11
S12
1.0
+90˚
0.5
5
2.0
+135˚
+45˚
4
3
∞
0
1
2
±180˚
0
3
5
2
4
–0.5
–135˚
–2.0
–45˚
1
–1.0
–90˚
Rmax. = 1
S21
S22
+90˚
1.0
Rmax. = 0.25
0.5
+135˚
2.0
+45˚
5
1
4
2
±180˚
0
5
0
∞
3
3
4
2
1
–135˚
–45˚
–90˚
4
Rmax. = 1.0
–0.5
–2.0
–1.0
Rmax. = 1
NE434S01
S-Parameters
MAG. AND ANG.
VDS = 2 V, ID = 15 mA
FREQUENCY
MHz
S11
MAG.
S21
ANG.
MAG.
(deg.)
S12
ANG.
MAG.
(deg.)
S22
ANG.
MAG.
(deg.)
ANG.
(deg.)
2000
.998
–41.7
7.162
140.1
.042
68.4
.415
–27.5
2500
.927
–47.5
6.856
133.6
.050
65.9
.479
–35.8
3000
.860
–61.3
6.603
122.0
.057
57.5
.423
–43.0
3500
.829
–69.9
6.305
114.4
.064
54.1
.429
–47.9
4000
.802
–79.2
6.033
106.8
.071
49.6
.426
–51.7
4500
.716
–87.5
5.687
98.5
.075
45.8
.406
–56.2
5000
.659
–93.9
5.415
91.6
.081
41.1
.394
–59.7
5500
.601
–99.7
5.184
84.7
.085
38.9
.374
–63.3
6000
.592
–108.5
5.050
77.6
.091
35.2
.340
–68.1
6500
.550
–118.5
4.912
70.5
.096
30.8
.311
–73.0
7000
.514
–130.2
4.774
63.0
.102
27.3
.279
–79.1
7500
.488
–144.5
4.600
55.4
.107
22.0
.232
–87.5
8000
.464
–158.9
4.401
47.9
.109
18.6
.189
–97.7
8500
.463
–171.7
4.187
41.0
.113
14.9
.155
–109.3
9000
.468
176.6
3.997
34.1
.114
11.5
.134
–126.9
9500
.472
166.4
3.812
27.7
.118
7.7
.121
–142.8
10000
.472
156.2
3.628
21.5
.119
4.7
.111
–156.2
10500
.476
147.0
3.477
15.6
.122
1.0
.103
–170.1
11000
.476
137.8
3.351
9.6
.124
–2.5
.098
174.4
11500
.488
127.7
3.251
3.5
.125
–5.8
.093
157.9
12000
.518
118.1
3.150
–2.9
.128
–9.2
.105
137.6
12500
.552
109.6
3.036
–9.7
.130
–12.9
.131
121.0
13000
.593
101.9
2.875
–16.4
.131
–16.7
.177
107.0
13500
.635
95.2
2.714
–22.7
.129
–21.2
.223
97.8
14000
.661
90.1
2.546
–28.1
.126
–22.5
.259
91.0
14500
.688
86.1
2.418
–32.6
.124
–24.9
.284
87.0
15000
.707
82.2
2.327
–37.0
.127
–27.4
.316
86.0
15500
.719
79.7
2.240
–41.8
.126
–28.8
.332
83.3
16000
.730
76.1
2.168
–46.8
.129
–31.6
.352
81.7
16500
.752
71.3
2.100
–52.7
.131
–33.2
.380
77.4
17000
.771
65.5
2.021
–58.4
.130
–38.5
.398
72.4
17500
.803
60.4
1.930
–65.1
.134
–42.2
.422
66.5
18000
.817
55.7
1.814
–70.5
.128
–44.3
.445
62.9
5
NE434S01
AMP. PARAMETERS
VDS = 2 V, ID = 15 mA
FREQUENCY
6
|S21|
2
GUmax
GAmax
MHz
dB
dB
dB
dB
2000
41.82
17.10
2500
26.36
3000
23.09
3500
4000
2
K
Delay
Mason’s U
ns
dB
–27.61
.10
.036
23.90
.82
16.72
–26.05
.23
.036
8.50
1.13
16.39
–24.82
.39
.064
5.83
.86
21.91
15.99
–23.94
.42
.042
5.04
.88
20.95
15.61
–22.95
.45
.042
4.47
.87
4500
19.00
15.10
–22.49
.60
.046
3.12
.78
5000
17.88
14.67
–21.87
.69
.038
27.689
2.47
.73
5500
16.89
14.29
–21.41
.78
.038
25.567
1.94
.65
6000
16.47
14.07
–20.78
.79
.039
27.520
1.87
.54
6500
15.83
13.83
–20.36
.84
.040
25.660
1.56
.44
7000
15.26
13.58
–19.85
.87
.041
25.850
1.33
.35
7500
14.68
13.25
–19.40
.91
.043
24.669
1.18
.24
8000
14.08
12.87
–19.24
.96
.041
23.510
1.05
.16
8500
13.59
12.44
–18.94
.98
.039
23.291
1.05
.11
9000
13.19
12.03
–18.84
1.00
.038
23.059
1.08
.08
15.01
|S12|
G1
G2
dB
dB
9500
12.78
14.21
11.62
–18.57
1.02
.036
22.736
1.09
.06
10000
12.34
13.37
11.19
–18.48
1.06
.034
21.540
1.09
.05
10500
11.99
12.86
10.82
–18.28
1.08
.033
20.889
1.12
.05
11000
11.66
12.36
10.50
–18.14
1.10
.033
19.984
1.12
.04
11500
11.46
12.06
10.24
–18.05
1.12
.034
19.642
1.18
.04
12000
11.37
11.98
9.97
–17.83
1.10
.035
20.331
1.36
.05
12500
11.30
11.92
9.65
–17.73
1.08
.038
20.980
1.58
.08
13000
11.19
11.79
9.17
–17.63
1.07
.037
21.543
1.88
.14
13500
11.14
11.70
8.67
–17.81
1.06
.035
21.748
2.25
.22
14000
10.92
11.29
8.12
–17.97
1.08
.030
20.156
2.50
.30
14500
10.82
11.17
7.67
–18.12
1.08
.025
19.965
2.79
.37
15000
10.80
11.30
7.33
–17.94
1.05
.025
21.257
3.00
.46
15500
10.67
11.20
7.01
–17.99
1.04
.027
20.523
3.15
.51
16000
10.60
11.55
6.72
–17.76
1.01
.028
21.974
3.30
.58
16500
10.74
6.45
–17.68
.98
.033
22.748
3.62
.68
25.818
17000
10.78
6.11
–17.72
.96
.032
17500
11.05
5.71
–17.46
.89
.037
18000
10.92
5.17
–17.88
.91
.030
27.860
3.92
.75
4.49
.85
4.78
.96
NE434S01
Noise Parameters
<Noise Parameters>
VDS = 2 V, ID = 15 mA
Freq (GHz)
NFmin (dB)
*opt.
Ga (dB)
MAG.
ANG. (deg.)
Rn/50
2.0
0.32
16.5
0.77
15
0.19
4.0
0.35
15.5
0.58
43
0.18
6.0
0.40
14.2
0.43
82
0.13
8.0
0.46
13.1
0.32
127
0.08
10.0
0.56
12.0
0.27
175
0.07
12.0
0.67
10.9
0.27
–139
0.10
14.0
0.80
9.9
0.34
–100
0.17
16.0
0.94
8.9
0.48
–70
0.29
18.0
1.10
8.0
0.69
–56
0.46
7
NE434S01
TYPICAL MOUNT PAD LAYOUT
2.4 mm TYP.
2.4 mm TYP.
8
NE434S01
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different
conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E)
Soldering process
Soldering conditions
Infrared ray reflow
Peak package’s surface temperature: 230 qC or below, Reflow time: 30
seconds or below (210 qC or higher), Number of reflow process: 1,
Exposure limit*: None
Partial heating method
Terminal temperature: 230 qC or below, Flow time: 10 seconds or below,
Exposure limit*: None
*:
Symbol
IR30-00
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 qC and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION:
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor
with shottky barrier gate.
9
NE434S01
[MEMO]
10
NE434S01
[MEMO]
11
NE434S01
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5