DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1725 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) This µPA1725 is N-Channel MOS Field Effect Transistor 8 5 designed for power management applications of 1, 2,3 4 5,6,7,8 notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 0.8 +0.10 –0.05 5.37 MAX. 0.15 RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) • Low Ciss : Ciss = 950 pF TYP. 1.44 RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) Non connection Source Gate Drain 6.0 ±0.3 4 0.05 MIN. • 1 RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) 1.8 MAX. • • ; ; ; ; 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1725G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID(DC) ±7 A ID(pulse) ±28 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source 2. Mounted on ceramic substrate of 1200 mm x 2.2mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14049EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1999, 2000 µ PA1725 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TYP. MAX. UNIT VGS = 4.5 V, ID = 3.5 A 16.5 21.0 mΩ RDS(on)2 VGS = 4.0 V, ID = 3.5 A 17.0 22.0 mΩ RDS(on)3 VGS = 2.5 V, ID = 3.5 A 22.0 30.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 0.5 1.0 1.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 5.0 11.0 Drain Leakage Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 950 pF Output Capacitance Coss VGS = 0 V 310 pF Reverse Transfer Capacitance Crss f = 1 MHz 160 pF Turn-on Delay Time td(on) ID = 3.5 A 30 ns VGS(on) = 4.5 V 120 ns td(off) VDD = 10 V 70 ns tf RG = 10 Ω 70 ns Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time • MIN. RDS(on)1 • • TEST CONDITIONS S Total Gate Charge QG ID = 7 A 9.6 nC Gate to Source Charge QGS VDD = 16 V 1.7 nC Gate to Drain Charge QGD VGS = 4.5 V 4.1 nC VF(S-D) IF = 7 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 7 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 27 nC Body Diode Forward Voltage TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 3 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 10 % PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) IG = 2 mA tf toff Data Sheet G14049EJ1V0DS00 µ PA1725 • TYPICAL CHARACTERISTICS (TA = 25 °C , All terminals are connected.) FORWARD TRANSFER CHARACTERISTICS 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 30 1 TA = 125˚C 75˚C 25˚C −25˚C 0.1 0.01 0.001 Pulsed 25 ID - Drain Current - A ID - Drain Current - A 10 VGS = 4.5 V 4.0 V 2.5 V 20 15 10 5 VDS = 10 V 0 2 1 3 0.4 0 4 40 VGS = 2.5 V 4.5 V 20 10 0 ID = 3.5 A − 50 0 50 100 150 Tch - Channel Temperature - ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 Pulsed 60 50 40 30 VGS = 2.5 V 4.0 V 20 4.5 V 10 0 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 1.2 1.6 2.0 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 50 0.8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 60 50 40 30 20 ID = 3.5 A 10 1.4 A 10 5 0 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 1.0 0.5 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G14049EJ1V0DS00 3 µ PA1725 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed 10 1 0.1 0.001 TA = −25˚C 25˚C 75˚C 125˚C 0.01 0.1 1 10 1000 IF - Diode Forward Current - A |yfs| - Forward Transfer Admittance - S 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 0V VGS = 4.0 V 10 1 0.1 100 Pulsed 0 0.4 ID- Drain Current - A 0.8 1.2 1.6 2.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 10 000 VGS = 0 V f = 1 MHz 1 000 Ciss Coss Crss 100 10 0.01 0.1 1 10 100 trr - Reverse Recovery Diode - ns 1 000 di/dt =100 A/µs VGS = 0 V 100 10 1 0.1 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 12 ID = 7 A VDD = 16 V 10 10 V 4V 20 8 6 4 2 VDS 0 5 10 15 20 QG - Gate Charge - nC ID - Drain Current - A 4 VGS 10 Data Sheet G14049EJ1V0DS00 25 0 30 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V µ PA1725 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200 mm 2 ×2.2 mm 2.4 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 TA = 25 ˚C Single Pulse PW µs s m s S n 1 ) = Lim 4. ite 5 V) d 1 m ID(DC) = 7 A G 10 R (V DS(o = 10 10 0 s m iss rD we Po 1 n io at ip ite m Li 0.1 0.01 0.1 d Mounted on ceramic substrate of 1200 mm 2 ×2.2 mm 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) = 28 A Rth(ch-A) = 62.5˚C/W 100 10 1 0.1 0.01 100 µ Mounted on ceramic substrate of 1200 mm2 × 2.2 mm Single Pulse 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s Data Sheet G14049EJ1V0DS00 5 µ PA1725 [MEMO] 6 Data Sheet G14049EJ1V0DS00 µ PA1725 [MEMO] Data Sheet G14049EJ1V0DS00 7 µ PA1725 • The information in this document is subject to change without notice. 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