DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1717 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1717 is P-Channel MOS Field Effect 8 Transistor designed for power management 5 applications of notebook computers. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 0.05 MIN. • Small and surface mount package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE µPA1717G Power SOP8 4.4 5.37 MAX. 0.40 Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) VGSS # 25 V Drain Current (DC) ID(DC) #6 A ID(pulse) # 24 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Total Power Dissipation (TA = 25°C) Note2 0.5 ±0.2 0.10 1.27 0.78 MAX. +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Note1 0.8 +0.10 –0.05 • Built-in G-S protection diode 6.0 ±0.3 4 0.15 1.8 MAX. • Low Ciss : Ciss = 830 pF TYP. 1.44 1 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14047EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan © 1999, 2000 µ PA1717 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance Gate to Source Cut-off Voltage TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = −10 V, ID = −3 A 26 33 mΩ RDS(on)2 VGS = −4.5 V, ID = −3 A 44 59 mΩ VGS(off) VDS = −10 V, ID = −1 mA −1.5 −2.0 −2.5 V 3.0 7.5 Forward Transfer Admittance | yfs | VDS = −10 V, ID = −3 A Drain Leakage Current IDSS VDS = −30 V, VGS = 0 V −1 µA Gate to Source Leakage Current IGSS VGS = # 25 V, VDS = 0 V # 10 µA Input Capacitance Ciss VDS = −10 V 830 pF Output Capacitance Coss VGS = 0 V 330 pF Reverse Transfer Capacitance Crss f = 1 MHz 130 pF Turn-on Delay Time td(on) ID = −3 A 15 ns VGS(on) = −10 V 120 ns VDD = −15 V 70 ns tf RG = 6 Ω 50 ns Total Gate Charge QG ID = −6 A 15 nC Gate to Source Charge QGS VDD = −24 V 3 nC Gate to Drain Charge QGD VGS = −10 V 5 nC Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage S VF(S-D) IF = 6 A, VGS = 0 V 0.82 V Reverse Recovery Time trr IF = 6 A, VGS = 0 V 35 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 15 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS (−) VGS Wave Form 0 10 % PG. 90 % 90 % ID VGS (−) 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID (−) 2 VGS(on) IG = −2 mA tf toff Data Sheet G14047EJ1V0DS00 µ PA1717 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 Mounted on ceramic substrate of 1200mm 2 x 2.2mm 2.4 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA d ite ) im 10 V L ) n (o =− −10 DS 1m Remark Mounted on ceramic substrate of =1 00 s 1 10 0 m 0m s s ID(DC) Po we rD −1 PW ID(pulse) GS R V t (a 2 µs 1200 mm x 2.2 mm iss ipa tio n Lim ite −0.1 d TA = 25 ˚C Single Pulse −0.01 −0.01 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A −100 Rth(ch-A) = 62.5 ˚C/W 10 1 0.1 0.01 0.0001 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G14047EJ1V0DS00 3 µ PA1717 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS −100 ID - Drain Current - A ID - Drain Current - A Pulsed −25 −10 TA = 150˚C 75˚C 25˚C −25˚C −1 −0.1 −0.01 −0.001 −30 VDS = −10 V VGS = −10 V −20 −4.5 V −15 −10 −5 −1 0 −2 Pulsed −4 −3 −0.2 0 VGS - Gate to Source Voltage - V TA = −25˚C 25˚C 75˚C 150˚C 1 0.1 −0.1 −1 −100 −10 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 10 VDS = −10 V Pulsed Pulsed 80 60 VGS = −4.5 V 40 −10 V 20 –1 –10 –100 −1.0 −1.2 70 ID = −6 A 60 −3 A 50 40 30 20 10 0 −15 −10 −5 VGS - Gate to Source Voltage - V −3.0 VDS = −10 V ID = −1 mA −2.5 −2.0 −1.5 −1.0 −0.5 0 – 1000 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A 4 −0.8 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 0 –0.1 −0.6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 −0.4 VDS - Drain to Source Voltage - V Data Sheet G14047EJ1V0DS00 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 Pulsed 100 ISD - Diode Forward Current - A VGS = −4.5 V 60 −10 V 40 20 0 −50 0 50 100 10 0.1 0.01 0.00 ID = −3 A 150 Crss −0.1 −1 −10 1000 td(on), tr, td(off), tf - Switching Time - ns Coss tr tf 100 td(off) td(on) 10 VGS(on) = −10 V VDD = −15 V RG = 6 Ω 1 −0.1 −100 −1 di/dt = 100 A/ µs VGS = 0 V 100 10 1 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE CURRENT 1000 −10 −100 ID - Drain Current - A VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns Ciss, Coss, Crss - Capacitance - pF Ciss 10 −0.01 1.50 1.00 SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 100 0.50 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 0V 1 Tch - Channel Temperature - ˚C 10000 Pulsed VGS = −4.5 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS −40 ID = −6 A −30 −20 −12 VDS = −24 V −15 V −6 V −10 VGS −8 −6 −10 −4 −2 VDS 0 5 10 15 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1717 0 QG - Gate Charge - nC IF - Diode Current - A Data Sheet G14047EJ1V0DS00 5 µ PA1717 [MEMO] 6 Data Sheet G14047EJ1V0DS00 µ PA1717 [MEMO] Data Sheet G14047EJ1V0DS00 7 µ PA1717 • The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4