DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. 8 5 11, 2, 3: : Drain1 Source 2, 3 : Source1 Gate 44: : Gate1 5 : Gate2 5, 6, 7, 8: Drain 6, 7 : Source2 8 : Drain2 1.2 MAX. 1.0±0.05 0.25 FEATURES 3° +5° –3° • 4.0 V drive available • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −6.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = −4.5 V, ID = −6.0 A) RDS(on)3 = 22 mΩ MAX. (VGS = −4.0 V, ID = −6.0 A) • Built-in G-S protection diode against ESD 0.1±0.05 1 4 6.4 ±0.2 PACKAGE µPA1819GR-9JG Power TSSOP8 0.65 0.27 +0.03 –0.08 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ORDERING INFORMATION PART NUMBER 0.5 0.6 +0.15 –0.1 1.0 ±0.2 0.1 0.8 MAX. 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TA = 25°C) ID(DC) m12 A ID(pulse) m48 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16267EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan © 2002 µ PA1819 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −1.0 µA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 µA −2.5 V Gate Cut-off Voltage VDS = −10 V, ID = −1.0 mA VGS(off) −2.0 11 23 | yfs | VDS = −10 V, ID = −6.0 A RDS(on)1 VGS = −10 V, ID = −6.0 A 9.8 12 mΩ RDS(on)2 VGS = −4.5 V, ID = −6.0 A 13.9 18.5 mΩ RDS(on)3 VGS = −4.0 V, ID = −6.0 A 16.4 22 mΩ Forward Transfer Admittance Drain to Source On-state Resistance −1.0 S Input Capacitance Ciss VDS = −10 V 2430 pF Output Capacitance Coss VGS = 0 V 690 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 420 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −6.0 A 19 ns VGS = −10 V 17 ns RG = 10 Ω 160 ns 160 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −24 V 45 nC Gate to Source Charge QGS VGS = −10 V 5.5 nC Gate to Drain Charge QGD ID = −12 A 15 nC Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V 0.83 V Reverse Recovery Time trr IF = 12 A, VGS = 0 V 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 40 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS(−) VGS(−) 0 IG = −2 mA td(off) tf toff Data Sheet G16267EJ1V0DS µ PA1819 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 2 Mounted on ceramic 2 Substrate of 5000 mm x 1.1 mm 1.5 1 0.5 Mounted on FR-4 board 2 of 2500 mm x 1.6 mm 0 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 ID(pulse) PW = 1 ms 10 ms -1 R DS(on) Limited (V GS = −10 V) 100 ms - 0.1 DC Single pulse Mounted on ceramic Substrate of 5000 mm 2 x 1.1 mm - 0.01 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) - 10 Single pulse Mounted on FR-4 board 2 of 2500 mm x 1.6 mm 125°C/W 100 10 Mounted on ceramic 2 Substrate of 5000 mm x 1.1 mm 62.5°C/W 1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16267EJ1V0DS 3 µ PA1819 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS - 50 - 100 - 10 VGS = −10 V - 40 −4.0 V - 30 - 20 - 10 -1 TA = 125°C 75°C 25°C −25°C - 0.1 - 0.01 - 0.001 0 - 0.0001 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 -1 VDS - Drain to Source Voltage - V - 1.5 - 3.5 | yfs | - Forward Transfer Admittance - S - 2.2 - 2.0 - 1.8 - 1.6 0 50 100 VDS = −10 V Pulsed 10 TA = −25°C 25°C 75°C 125°C 1 0.1 - 0.01 - 0.1 ID = −6.0 A Pulsed VGS = −4.0 V 20 −4.5 V −10 V 50 100 - 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 30 0 - 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10 -1 150 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ -3 100 VDS = −10 V ID = −1.0 mA - 1.4 -50 150 Tch – Channel Temperrature - °C 4 - 2.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT - 2.4 0 -50 -2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V VDS = −10 V Pulsed −4.5 V ID - Drain Current - A ID - Drain Current - A Pulsed 30 ID = −6.0 A Pulsed 20 10 0 0 -5 - 10 - 15 VGS - Gate to Source Voltage - V Data Sheet G16267EJ1V0DS - 20 -4 µ PA1819 30 VGS = −10 V Pulsed TA = 125°C 75°C 25°C −25°C 20 10 0 - 0.01 - 0.1 -1 - 10 - 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 VGS = −4.5 V Pulsed TA = 125°C 75°C 25°C −25°C 20 10 0 - 0.01 - 0.1 ID - Drain Current - A VGS = 0 V f = 1.0 MHz Ciss, C oss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 10000 VGS = −4.0 V Pulsed 20 TA = 125°C 75°C 25°C −25°C - 0.1 -1 - 10 C iss 1000 Coss Crss 100 - 0.1 - 100 ID - Drain Current - A - 10 - 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VDD = −15 V VGS = −10 V RG = 10 Ω tf t d(off) 100 100 VGS = 0 V Pulsed IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 10000 -1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 - 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 30 0 - 0.01 - 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 -1 10 1 0.1 t d(on) tr 10 - 0.01 0.01 - 0.1 -1 - 10 - 100 ID - Drain Current - A 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet G16267EJ1V0DS 5 µ PA1819 DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 10 VGS - Gate to Source Voltage - V ID = −12 A VDD = −6.0 V −15 V −24 V -8 -6 -4 -2 0 0 10 20 30 40 50 QG - Gate Charge - nC 6 Data Sheet G16267EJ1V0DS µ PA1819 [MEMO] Data Sheet G16267EJ1V0DS 7 µ PA1819 • The information in this document is current as of September, 2002. 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