DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain applications of notebook computers. FEATURES PART NUMBER PACKAGE µPA2700GR Power SOP8 4.4 5.37 MAX. 0.15 0.05 MIN. ORDERING INFORMATION 6.0 ±0.3 4 0.8 +0.10 –0.05 1.44 1 1.8 MAX. • Low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±17 A ID(pulse) ±68 A PT 2.0 W Tch 150 °C Tstg –55 to + 150 °C IAS 17 A EAS 28.9 mJ Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Note2 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15672EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 2002 µPA2700GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance MIN. TYP. MAX. UNIT 10 µA ±100 nA 2.5 V VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 9.0 A 11 21.5 RDS(on)1 VGS = 10 V, ID = 9.0 A 4.2 5.3 mΩ RDS(on)2 VGS = 4.5 V, ID = 9.0 A 5.5 7.3 mΩ RDS(on)3 VGS = 4.0 V, ID = 9.0 A 6.3 8.4 mΩ S Input Capacitance Ciss VDS = 10 V 2600 pF Output Capacitance Coss VGS = 0 V 1000 pF Reverse Transfer Capacitance Crss f = 1 MHz 340 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 9.0 A 20 ns tr VGS = 10 V 24 ns td(off) RG = 10 Ω 75 ns 22 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 26 nC Gate to Source Charge QGS VGS = 5 V 7 nC Gate to Drain Charge QGD ID = 17 A 11 nC VF(S-D) IF = 17 A, VGS = 0 V 0.8 Reverse Recovery Time trr IF = 17 A, VGS = 0 V 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 51 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω 1.2 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE 2 10% 0 10% Wave Form VDD PG. 90% VDS VGS 0 D.U.T. IG = 2 mA RL 50 Ω VDD Data Sheet G15672EJ2V0DS td(on) tr ton td(off) tf toff µPA2700GR TYPICAL CHARACTERISTICS (TA = 25°C) ★ DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 100 120 140 Mounted on ceramic substrate of 1200 mm2 ×2.2 mm 2.4 2.0 1.6 1.2 0.8 0.4 0 160 0 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) = 68 A PW 10 d ite ) im V ) L 10 n o S( S = RD (VG PW PW = Po Lim we ite r Di d s = = 1 m s 10 m s 10 0 Remark Mounted on ceramic substrate of m 2 s sip 1 1200 mm x 2.2 mm at ion 0.1 TA = 25˚C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - ˚C/ W ID - Drain Current - A ID(DC) = 17 A Rth(ch-A) = 62.5˚C/W 10 1 0.1 0.001 Mounted on ceramic substrate of 1200 mm 2 × 2.2 mm Single Pulse Channel to Ambient 0.01 0.1 1 10 PW - Pulse Width - s Data Sheet G15672EJ2V0DS 100 1000 3 µPA2700GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 80 Pulsed Pulsed 70 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 10 TA = 150˚C 75˚C 25˚C −25˚C 1 0.1 60 4.5 V 50 4.0 V 40 30 20 10 0.01 0 1 2 VDS = 10 V 4 5 3 0 0.0 100 VDS = 10 V Pulsed TA = −25˚C 25˚C 75˚C 150˚C 10 1 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 4 15 10 5 ID = 9.0 A 0 0 Pulsed 12 10 8 VGS = 4.0 V 6 4.5 V 10 V 2 0 0.1 1 10 5 10 15 20 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 14 4 0.2 0.4 0.6 VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V 3 VDS = 10 V ID = 1 mA 2 1 0 −50 −25 ID - Drain Current - A 0 25 50 75 100 125 150 Tch - Channel Temperature - ˚C Data Sheet G15672EJ2V0DS µPA2700GR SOURCE TO DRAIN DIODE FORWARD VOLTAGE 20 100 ISD - Diode Forward Current - A Pulsed 15 10 VGS = 4 V 4.5 V 10 V 5 0 −50 Pulsed VGS = 0 V 10 1 0.1 0.01 −25 0 25 50 75 100 125 0 150 0.2 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1.0 0.8 1.2 1.4 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 10 0.1 1 10 td(off) 100 tr tf td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 1 10 100 40 VDS - Drain to Source Voltage - V di/dt = 100 A/ µ s VGS = 0 V 100 1 0.1 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 10 1 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 0.6 1000 10000 Ciss, Coss, Crss - Capacitance - pF 0.4 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 8 35 7 VGS VDD = 24 V 15 V 6V 30 25 6 5 20 4 15 3 10 2 VDS 5 1 ID = 17 A 0 0 ID - Drain Current - A 4 8 12 16 20 24 28 32 36 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 40 QG - Gate Charge - nC Data Sheet G15672EJ2V0DS 5 µPA2700GR [MEMO] 6 Data Sheet G15672EJ2V0DS µPA2700GR [MEMO] Data Sheet G15672EJ2V0DS 7 µPA2700GR • The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4