DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N075CUE, NP88N075DUE, NP88N075EUE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE NP88N075CUE TO-220AB NP88N075DUE TO-262 NP88N075EUE TO-263 • Channel temperature 175 degree rated (TO-220AB) • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low Ciss : Ciss = 8200 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Note1 ID(DC) ±88 A Drain Current (Pulse) Note2 ID(pulse) ±352 A Total Power Dissipation (TC = 25°C) PT1 288 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Tstg –55 to +175 °C Storage Temperature Note3 IAS 69 / 88 A Single Avalanche Energy Note3 EAS 450 / 14 mJ Single Avalanche Current (TO-262) (TO-263) Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.52 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14676EJ4V0DS00 (4th edition) Date Published March 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 2000 NP88N075CUE, NP88N075DUE, NP88N075EUE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 3.0 4.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 44 A 30 60 RDS(on) VGS = 10 V, ID = 44 A Drain to Source On-state Resistance Input Capacitance Output Capacitance 8200 12300 pF Coss 800 1200 pF 440 800 pF VDD = 38 V, ID = 44 A 35 77 ns VGS(on) = 10 V 28 70 ns 105 210 ns 16 40 ns VDD = 60 V 150 230 nC VGS = 10 V 30 nC 52 nC td(on) Rise Time tr td(off) Fall Time f = 1 MHz RG = 0 Ω tf Total Gate Charge QG Gate to Source Charge QGS QGD ID = 88 A VF(S-D) IF = 88 A, VGS = 0 V 1.0 V trr IF = 88 A, VGS = 0 V 80 ns Qrr di/dt = 100 A/µs 240 nC Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω mΩ VGS = 0 V Turn-on Delay Time Body Diode Forward Voltage 8.5 VDS = 25 V Crss Gate to Drain Charge 6.2 Ciss Reverse Transfer Capacitance Turn-off Delay Time S VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D14676EJ4V0DS td(on) tr ton td(off) tf toff NP88N075CUE, NP88N075DUE, NP88N075EUE TYPICAL CHARACTERISTICS (TA = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 350 100 80 60 40 20 0 25 50 75 100 125 150 175 200 150 100 50 25 50 75 100 125 150 175 TC - Case Temperature - ˚C TC - Case Temperature - ˚C Figure3. FORWARD BIAS SAFE OPERATING AREA Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 1000 100 200 500 PW ID(pulse) n) o S( d ite V) 0 Lim =1 ID(DC) S RDat VG ( 0µ 10 10 Po Lim wer DC ite Dis d sip 0µ s 1m =1 s s ms ati on 10 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V 450 mJ 400 300 IAS = 69 A 200 100 14 mJ 0 50 25 88 A 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 250 0 0 200 Single Pulse Avalanche Energy - mJ ★ 0 300 100 Rth(ch-A) = 83.3˚C/W 10 1 Rth(ch-C) = 0.52˚C/W 0.1 0.01 10 µ Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14676EJ4V0DS 3 NP88N075CUE, NP88N075DUE, NP88N075EUE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 500 Pulsed VDS = 10 V TA = −55˚C 25˚C 75˚C 175˚C 100 ID - Drain Current - A ID - Drain Current - A 1000 10 1 0.1 3 6 RDS(on) - Drain to Source On-state Resistance - mΩ VGS =10 V 200 100 7 Pulsed 1 0 3 2 4 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 10 TA = 175˚C 75˚C 25˚C −55˚C 1 0.1 0.01 0.01 0.1 VDS = 10 V Pulsed 10 100 1 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 Pulsed VGS = 10 V 10 5 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V ID - Drain Current - A 4 300 0 5 4 VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 2 400 20 Pulsed 15 10 ID = 44 A 5 0 TA = 25˚C 4 0 8 12 16 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 µA 4 3 2 1 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D14676EJ4V0DS NP88N075CUE, NP88N075DUE, NP88N075EUE Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 18 1000 ISD - Diode Forward Current - A 16 14 12 10 VGS = 10 V 8 6 4 2 0 Pulsed ID = 44 A −50 0 50 100 VGS = 10 V 100 VGS = 0 V 10 1 0.1 0 150 Tch - Channel Temperature - ˚C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 Ciss 10000 Coss Crss 100 0.1 1 10 td(off) 100 td(on) tr 10 VDD = 38 V VGS = 10 V RG = 10 Ω 10 1 100 VDS - Drain to Source Voltage - V ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 100 10 di/dt = 100 A/µs VGS = 0 V 1 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns tf 1 0.1 100 1000 1 0.1 1.5 1000 VGS = 0 V f = 1 MHz 1000 1.0 Figure15. SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 0.5 VF(S-D) - Body Diode Forward Voltage - V 10 80 8 VDD = 60 V 38 V 15 V VGS 60 6 40 4 20 2 VDS ID = 88 A 0 0 40 80 120 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 160 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14676EJ4V0DS 5 NP88N075CUE, NP88N075DUE, NP88N075EUE PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 4.8 MAX. φ 3.6±0.2 1.0±0.5 1.3±0.2 10.0 1 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 2 3 1.3±0.2 0.5±0.2 0.75±0.1 2.54 TYP. 1.3±0.2 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 8.5±0.2 4 4.8 MAX. 4 15.5 MAX. 5.9 MIN. (10) 12.7 MIN. 3.0±0.3 10.6 MAX. 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT 4.8 MAX. (10.0) 1.3±0.2 4 5.7±0.4 8.5±0.2 1.0±0.5 Drain 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Gate Body Diode ) .5R (0 ) .8R (0 0.5±0.2 Source 1.Gate 2.Drain 3.Source 4.Fin (Drain) Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D14676EJ4V0DS NP88N075CUE, NP88N075DUE, NP88N075EUE [MEMO] Data Sheet D14676EJ4V0DS 7 NP88N075CUE, NP88N075DUE, NP88N075EUE • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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