DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP32N055HLE TO-251 NP32N055ILE TO-252 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. (TO-251) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±32 A Drain Current (Pulse) Note1 ID(pulse) ±100 A Total Power Dissipation (TA = 25°C) PT 1.2 W Total Power Dissipation (TC = 25°C) PT 66 W Note2 IAS 28 / 21 / 8 A Single Avalanche Energy Note2 EAS 7.8 / 44 / 64 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C Single Avalanche Current (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Rth(ch-C) 2.27 °C/W Channel to Ambient Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14137EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 NP32N055HLE, NP32N055ILE ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 16 A 19 24 mΩ RDS(on)2 VGS = 5.0 V, ID = 16 A 22 29 mΩ RDS(on)3 VGS = 4.5 V, ID = 16 A 24 33 mΩ Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 16 A 8 16 Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 1300 2000 pF Output Capacitance Coss 180 270 pF Reverse Transfer Capacitance Crss 90 160 pF Turn-on Delay Time td(on) ID = 16 A, VGS(on) = 10 V, VDD = 28 V, 14 31 ns RG = 1 Ω 8 20 ns td(off) 40 81 ns tf 7.4 19 ns Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge S QG1 ID = 32 A, VDD = 44 V, VGS = 10 V 27 41 nC QG2 ID = 32 A, VDD = 44 V, VGS = 5.0 V 15 23 nC Gate to Source Charge QGS 5 nC Gate to Drain Charge QGD 9 nC IF = 32 A, VGS = 0 V 1.0 V IF = 32 A, VGS = 0 V, di/dt = 100 A/µs 41 ns 58 nC Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10 % 90 % VDD VDS 90 % BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10 % 10 % 0 Wave Form VDD D.U.T. IG = 2 mA 90 % VDS VGS 0 RL VDD Data Sheet D14137EJ3V0DS td(on) tr ton td(off) tf toff NP32N055HLE, NP32N055ILE TYPICAL CHARACTERISTICS (TA = 25 °C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 0 25 ★ d ite V) Lim10 = 10 PW ID(pulse) ID(DC) 1m s DC P Limowe ite r D d iss 0µ =1 0µ 10 Single Pulse Avalanche Energy - mJ R tV (a s s ipa tio n 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 125 150 175 200 70 64 mJ 60 50 44 mJ IAS = 8 A 21 A 28 A 40 30 20 10 7.8 mJ 0 25 100 VDS - Drain to Source Voltage - V 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 1000 ) (on DS GS 75 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Figure3. FORWARD BIAS SAFE OPERATING AREA 100 50 TC - Case Temperature - ˚C TC - Case Temperature - ˚C Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 2.27 ˚C/W 1 0.1 0.01 10 µ Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14137EJ3V0DS 3 NP32N055HLE, NP32N055ILE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 120 Pulsed Pulsed 10 ID - Drain Current - A ID - Drain Current - A 100 TA = −55˚C 25˚C 75˚C 150˚C 175˚C 1 0.1 VGS =10 V 80 5.0 V 60 4.5 V 40 20 2.0 3.0 VDS = 10 V 5.0 6.0 4.0 RDS(on) - Drain to Source On-state Resistance - mΩ 1 0 2 3 4 5 6 7 8 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 100 Pulsed VDS = 10 V 10 TA = 175˚C 75˚C 25˚C −55˚C 1 0.1 0.01 0.01 0.1 1 10 100 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 70 60 50 40 30 VGS = 10 V 5.0 V 4.5 V 20 10 0 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V ID - Drain Current - A 4 0 VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 0.01 1.0 30 ID = 16 A 20 10 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = VGS ID = 250 µA 2.0 1.0 0 −50 ID - Drain Current - A 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14137EJ3V0DS Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 ISD - Diode Forward Current - A 1000 50 VGS = 4.5 V 5.0 V 10 V 30 20 10 100 VGS = 10 V 10 VGS = 0 V 1 ID = 16 A 0 −50 50 0 100 Pulsed 0.1 150 0 0.5 Tch - Channel Temperature - ˚C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz Ciss Coss Crss 10 0.1 1 10 1000 tf 100 td(off) td(on) 10 tr 1 0.1 100 Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 di/dt = 100 A/µs VGS = 0 V 100 10 VDS - Drain to Source Voltage - V 80 1000 trr - Reverse Recovery Time - ns 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 0.1 1.5 Figure15. SWITCHING CHARACTERISTICS 1000 100 1.0 VSD - Source to Drain Voltage - V 14 60 40 10 100 10 8 6 20 4 VDS 0 1.0 12 VGS VDD = 44 V 28 V 11 V 2 ID = 32 A 0 4 8 12 16 20 24 28 VGS - Gate to Source Voltage - V 40 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ NP32N055HLE, NP32N055ILE 32 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14137EJ3V0DS 5 NP32N055HLE, NP32N055ILE PACKAGE DRAWINGS (Unit: mm) 0.6±0.1 0.6±0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 0.5±0.1 1.0 MIN. 1.5TYP. +0.2 1.3 MAX. 4 2.3±0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.5 1.3 MAX. 0.8 4.3 MAX. 3 13.7 MIN. 2 7.0 MAX. 1 5.5±0.2 1.6±0.2 4 1.5-0.1 6.5±0.2 5.0±0.2 0.5±0.1 2.0 MIN. 5.0±0.2 2.3±0.2 1.5-0.1 6.5±0.2 +0.2 2) TO-252 (MP-3Z) 5.5±0.2 10.0 MAX. 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Remark Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14137EJ3V0DS NP32N055HLE, NP32N055ILE [MEMO] Data Sheet D14137EJ3V0DS 7 NP32N055HLE, NP32N055ILE • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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