DATA SHEET MOS INTEGRATED CIRCUIT µPD16813 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved as compared with that of conventional charge pump drivers. The µPD16813 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON = 2.0 Ω TYP. • Low current consumption: IDD = 100 µA MAX. • Noise reduction circuit that operates when INC is OFF. • Compact surface mount package: 16-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) VM1 1 16 NC 1A 2 15 1B PGND1 3 14 PGND2 2A 4 13 2B VDD 5 12 VM2 IN1 6 11 SEL IN2 7 10 NC INC 8 9 DGND ORDERING INFORMATION Part Number µPD16813GS Package 16-pin plastic SOP (300 mil) Document No. S10590EJ2V0DS00 (2nd edition) Date Published July 1997 N Printed in Japan © 1997 µPD16813 BLOCK DIAGRAM VDD VM VM1 + IN1 1A ‘‘H” BRIDGE 1 IN2 1B SEL PGND1 CONTROL CIRCUIT VM2 INC 2A ‘‘H” BRIDGE 2 2B DGND PGND2 FUNCTION TABLE • In stop mode (SEL = High) Excitation Direction INC IN1 IN2 H1 H2 <1> <2> <3> <4> H H H H H L L H H H L L F R R F F F R R – L × × H1 F Stop <4> • In brake mode (SEL = Low) INC IN1 IN2 H1 H2 <1> <2> <3> <4> H H H H H L L H H H L L F R R F F F R R – L × × R : Reverse × : Don’t care 2 H2 R Excitation Direction F : Forward <1> Brake H2 F <3> <2> H1 R µPD16813 FORWARD REVERSE STOP BRAKE VM VM VM VM ON OFF A OFF B OFF ON A ON OFF B OFF A ON OFF OFF B OFF OFF A OFF ON B ON ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Rating Unit Supply voltage (motor block) VM –0.5 to +7 V Supply voltage (control block) VDD –0.5 to +7 V Pd1 0.862Note 1 W Pd2 1.087Note 2 ID (pulse) ±1.0Note 2, 3 A Input voltage VIN –0.5 to VDD + 0.5 V Operating temperature range TA 0 to 60 °C Tj MAX. 150 °C Tstg –55 to +125 °C Power consumption Instantaneous H bridge driver current Operation junction temperature Storage temperature range Notes 1. IC only 2. When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) 3. t ≤ 5 ms, Duty ≤ 40 % Pd – TA Characteristics 1.2 When mounted on printed circuid boad Average power consumption Pd (W) 1.0 IC only 0.8 0.6 0.4 0.2 0 20 40 60 80 Ambient temperature TA (˚C) 3 µPD16813 RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply voltage (motor block) VM 4.0 5.0 6.0 V Supply voltage (control block) VDD 4.0 5.0 6.0 V ±310 mA 60 °C H bridge driver currentNote IDR Operating temperature TA 0 Note When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified) Parameters Symbol Conditions MIN. VM = 6.0 V, VDD = 6.0 V MAX. Unit 1.0 µA 0.1 mA OFF VM pin current IM VDD pin current IDD Control pin high-level input current IIH VIN = VDD 1.0 µA Control pin low-level input current IIL VIN = 0 V –1.0 µA Control pin high-level input voltage VIH 3.0 VDD + 0.3 V Control pin low-level input voltage VIL –0.3 0.8 V 4.0 Ω % H bridge circuit ON resistanceNote 1 RON1 VM = 5 V, VDD = 5 V RON relative accuracy ∆RON Excitation direction <2>, <4>Note 2 ±5 ∆RON Excitation direction <1>, <3> ±10 H bridge circuit propagation delay time tPHL H bridge circuit propagation delay time tPLH H bridge circuit rise time tTHL tTLH H bridge circuit fall time 2.0 2.0 2.5 µs 0.4 0.65 µs VM = 5 V, VDD = 5 V,Note 3 0.2 0.4 µs TA = 25 °C, RM = 20 Ω 0.1 0.2 µs VM = 5 V, VDD = 5 V,Note 3 TA = 25 °C, RM = 20 Ω Notes 1. Sum of ON resistances of top and bottom transistors 2. For the excitation direction, refer to FUNCTION TABLE. 3. INC TPHL TPLH IM TTHL 4 TYP. TTLH µ PD16813 CHARACTERISTIC CURVES RON vs. Tj Characteristics RON vs. VDD (=VM) Characteristics 4 RON = 20 Ω H bridge ON resistance RON (Ω) H bridge ON resistance RON (Ω) 4 3 2 3 2 1 1 0 0 25 50 75 100 125 Operation junction temperature Tj (˚C) 4.0 5.0 6.0 Supply voltage VDD (=VM) (V) 150 TPHL – TA Characteristics TPLH – TA Characteristics 0.8 H bridge circuit propagation delay time TPLH (µs) H bridge circuit propagation delay time TPHL (µs) 4 3 2 1 0 25 50 75 100 125 Operating temperature TA (˚C) 150 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Operating temperature TA (˚C) 150 5 µPD16813 16 PIN PLASTIC SOP (300 mil) 16 9 P detail of lead end 1 8 A H J E K F G I C N D M B L M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 10.46 MAX. 0.412 MAX. B 0.78 MAX. 0.031 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.55 0.061 H 7.7±0.3 0.303±0.012 I 5.6 0.220 J 1.1 0.043 K 0.20 +0.10 –0.05 0.008 +0.004 –0.002 L 0.6±0.2 M 0.12 0.005 N 0.10 0.004 P 3 ° +7° –3° 3° +7° –3° 0.024 +0.008 –0.009 P16GM-50-300B-4 6 µPD16813 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E). Soldering Method Soldering Conditions Symbol of Recommended Soldering Infrared reflow Peak package temperature: 230 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 1, Number of days: NoneNote IR30-00 VPS Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), Number of times: 1, Number of days: NoneNote VP15-00 Wave soldering Solder bath temperature: 260 °C MAX., Time: 10 seconds MAX., Number of times: 1, Number of days: NoneNote WS60-00 Partial heating Pin temperature: 300 °C MAX., Time: 10 seconds MAX., Number of days: NoneNote – Note The number of storage days at 25 °C, 65 % RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination (except partial heating). 7 µPD16813 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. 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Anti-radioactive design is not implemented in this product. M4 96.5 2