DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits using bipolar transistors. A low-voltage malfunction prevention function is provided to prevent the IC from malfunctioning when the supply voltage drops. By eliminating the charge pump circuit, the current during power-OFF is drastically decreased. As the package, a 30-pin plastic shrink SOP is employed to enable the creation of compact, slim application sets. This driver IC can drive two stepping motors at the same time, and is ideal for driving stepping motors in the lens of a video camera. FEATURES • Four H bridge circuits employing power MOS FETs • Low current consumption by eliminating charge pump VM pin current when power-OFF: 10 µA MAX. VDD pin current: 10 µA MAX. • Input logic frequency: 100 kHz • 3-V power supply Minimum operating supply voltage: 2.5 V • Low-voltage malfunctioning prevention circuit • 30-pin plastic shrink SOP (300 mil) (µPD16833AG3) ORDERING INFORMATION Part Number µPD16833AG3 Package 30-pin plastic shrink SOP (300 mil) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Rating Unit VDD –0.5 to +6.0 V VM –0.5 to +6.0 V VIN –0.5 to VDD + 0.5 V DC ±300 mA PW ≤ 10 ms, Duty ≤ 5 % ±700 mA PT 1.19 W Peak junction temperature TCH (MAX) 150 °C Storage temperature range Tstg –55 to +150 °C Supply voltage Input voltage H bridge drive currentNote 1 Instantaneous H bridge drive Power IDR (DC) currentNote 1 dissipationNote 2 IDR (pulse) Conditions Notes 1. Permissible current per phase, when mounted on a printed circuit board 2. When mounted on a glass epoxy board (10 cm × 10 cm × 1 mm) The information in this document is subject to change without notice. Document No. S13147EJ1V0DS00 (1st edition) Date Published January 1998 N CP(K) Printed in Japan © 1998 µPD16833A Recommended Operating Conditions Parameter Supply voltage Symbol MIN. TYP. MAX. Unit VDD 2.5 5.5 V VM 2.7 5.5 V H bridge drive current IDR –200 200 mA Logic input frequencyNote fIN 100 kHz Operating temperature range TA 85 °C 125 °C Peak junction temperature –10 TCH (MAX) Note Common to IN and EN pins DC Characteristics (Unless otherwise specified, VDD = VM = 3.0 V, TA = 25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit IM (OFF) with all control pins at low level 10 µA VDD pin current IDD with all control pins at low level 10 µA High-level input current IIH VIN =VDD 0.06 mA Low-level input current IIL VIN = 0 Input pull-down resistor RIND High-level input voltage VIH Low-level input voltage OFF VM pin current H bridge ON resistanceNote Low-voltage malfunction prevention circuit operating voltage Note µA –1.0 50 200 kΩ VDD = 2.5 V to 5.5 V VDD × 0.7 VDD + 0.3 V VIL VDD = 2.5 V to 5.5 V –0.3 VDD × 0.3 V RON VDD = VM = 2.7 V to 5.5 V 3.0 Ω VDDS1 VM = 5.0 V –10 °C ≤ TA ≤ +85 °C 0.8 2.5 V VDDS2 VM = 3.0 V –10 °C ≤ TA ≤+85 °C 0.65 2.5 V TYP. MAX. Unit 0.7 20 µA 0.2 0.5 µA 0.4 1.0 µs 70 200 ns Sum of top and bottom ON resistances (@IDR = 100 mA) AC Characteristics (Unless otherwise specified, VDD = VM = 3.0 V, TA = 25 °C) Parameter H bridge output circuit turn-ON Symbol tONH Conditions MIN. RM = 20 Ω, Figure 1 time H bridge output circuit turn-OFF tOFFH time 2 Rise time tr Fall time tf 0.1 µPD16833A FUNCTION TABLE Channel 1 Channel 2 EN1 IN1 OUT1A OUT1B EN2 IN2 OUT2A OUT2B H L H L H L H L H H L H H H L H L L Z Z L L Z Z L H Z Z L H Z Z Channel 3 Channel 4 EN3 IN3 OUT3A OUT3B EN4 IN4 OUT4A OUT4B H L H L H L H L H H L H H H L H L L Z Z L L Z Z L H Z Z L H Z Z H: High level, L: Low level, Z: High impedance IN PIN CONFIGURATION NC 1 30 NC NC 2 29 NC VDD 3 28 DGND VM1 4 27 NC 1A 5 26 1B PGND 6 25 PGND 2A 7 24 2B 3A 8 23 VM2, 3 PGND 9 22 3B 4A 10 21 PGND VM4 11 20 4B IN1 12 19 EN4 EN1 13 18 IN4 IN2 14 17 EN3 EN2 15 16 IN3 3 µPD16833A Figure 1. Switching Characteristic Wave 100 % 50 % VIN 50 % 0% tON tON tOFF 100 % 90 % tOFF 100 % 90 % 50 % IDR 50 % 10 % –10 % 10 % –10 % 0% tf –50 % –50 % tr –90 % tr 4 –90 % –100 % tf The current flowing in the direction from OUT_A to OUT_B is assumed to be (+). µPD16833A BLOCK DIAGRAM NC NC NC NC NC VDD 1 2 27 29 30 3 Low-voltage malfunction prevention circuit IN1 12 Control circuit EN1 13 14 Control circuit EN2 15 16 Control circuit EN3 17 18 Control circuit 1A 26 1B 6 PGND 23 VM2, 3 7 2A 24 2B 25 PGND 8 3A 22 3B 9 PGND 11 VM4 10 4A H bridge 3 DGND IN4 5 H bridge 2 DGND IN3 VM1 H bridge 1 DGND IN2 4 H bridge 4 EN4 19 20 4B DGND 28 21 PGND 5 1 to 10 µ F 1 to 10 µ F Battery VM4 VM2, 3 VM1 1A VDD H bridge 1 Low-voltage malfunction prevention circuit IN1 EN1 EN2 IN3 1B Motor 1 PGND 2A H bridge 2 IN2 CPU STANDARD CONNECTION EXAMPLE 6 VDD = VM = 2.7 V to 5.5 V DC/DC Converter 2B PGND Control circuit EN3 3A Level shift circuit H bridge 3 3B Motor 2 PGND 4A IN4 H bridge 4 EN4 4B DGND PGND GND µPD16833A µPD16833A TYPICAL CHARACTERISTICS (TA = 25 °C) IM (OFF) vs. VM characteristics PT vs. TA characteristics 1.4 20 OFF VM pin current IM (OFF) ( µ A) Total power dissipation PT (W) All control pins at low level TA = 25 °C 1.19 W 1.2 1.0 0.8 0.6 0.4 10 0.2 0 –10 0 0 40 60 80 100 120 1 Ambient temperature TA (°C) 2 3 4 5 6 7 Output block supply voltage VM (V) IIH/IIL vs. VIN characteristics VIH/VIL vs. VDD characteristics 100 TA = 25 °C TA = 25 °C 3 Input voltage VIH/VIL (V) Input current IIH/IIL ( µ A) 80 60 IIH 40 20 VIH VIL 2 1 IIL 0 1 2 3 4 5 Input voltage VIN (V) 6 7 1 2 3 4 5 6 7 Control block supply voltage VDD (V) 7 µPD16833A VDDS vs. VM characteristics RIND vs. VDD characteristics 3 200 TA = 25 °C Low voltage detection voltage VDDS (V) Input pull-down resistor RIND (kΩ) TA = 25 °C 150 100 50 2 1 0 0 1 2 3 4 5 6 1 7 2 3 4 5 RON vs. TA characteristics RON vs. VM characteristics 3 3 TA = 25 °C IDR = 100 mA VM = 3.5 V IDR = 100 mA Output ON resistor RON (Ω) Output ON resistor RON (Ω) 7 Output block supply voltage VM (V) Control block supply voltage VDD (V) 2 1 0 1 2 3 4 5 6 Output block supply voltage VM (V) 8 6 7 2 1 0 –25 0 25 50 75 Ambient temperature TA (°C) 100 µPD16833A Switching time vs. VDD/VM characteristics Switching time vs. TA characteristics 1000 1000 VDD = VM = 3 V RM = 20 Ω 800 Switching time tON/tOFF/tr/tf (ns) Switching time tON/tOFF/tr/tf (ns) RM = 20 Ω TA = 25 °C 600 tON 400 tOFF 200 tr 800 tON 600 tr 400 tOFF 200 tf tf 0 1 2 3 4 5 Supply voltage VDD/VM (V) 6 7 0 –25 0 25 50 75 100 Ambient temperature TA (°C) 9 µPD16833A PACKAGE DIMENSION 30 PIN PLASTIC SHRINK SOP (300 mil) 30 16 3° +7° –3° detail of lead end 1 15 A H J E K F G I C D N M M NOTE Each lead centerline is located within 0.10 mm (0.004 inch) of its true position (T.P.) at maximum material condition. 10 L B P30GS-65-300B-1 ITEM MILLIMETERS INCHES A 10.11 MAX. 0.398 MAX. B 0.51 MAX. 0.020 MAX. C 0.65 (T.P.) 0.026 (T.P.) D 0.30+0.10 –0.05 0.012 +0.004 –0.003 E 0.125 ± 0.075 0.005 ± 0.003 F 2.0 MAX. 0.079 MAX. G 1.7 ± 0.1 0.067 ± 0.004 H 8.1 ± 0.2 0.319 ± 0.008 I 6.1 ± 0.2 0.240 ± 0.008 J 1.0 ± 0.2 0.039 +0.009 –0.008 K 0.15+0.10 –0.05 0.006 +0.004 –0.002 L 0.5 ± 0.2 0.020 +0.008 –0.009 M 0.10 0.004 N 0.10 0.004 µPD16833A RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. For the details of the recommended soldering conditions of this type, refer to the Semiconductor Device Mounting Technology Manual (C10535E). Soldering Method Soldering Conditions Symbol of Recommended Soldering Infrared reflow Peak package temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 3 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. IR35-00-3 VPS Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), (200 °C MIN.), Number of times: 2 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. VP15-00-2 Wave soldering Soldering bath temperature: 260 °C MAX., Time: 10 seconds MAX., Preheating temperature: 120 °C MAX., Number of times: 1, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. WS60-00-1 Note The number of storage days at 25 °C, 65% RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination. 11 µPD16833A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2