DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors. In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets. In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM and DVD. FEATURES • Four H bridge circuits employing power MOS FETs • High-speed PWM drive: Operating frequency: 120 kHz MAX. • Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.) • 30-pin shrink SOP (300 mil) ORDERING INFORMATION Part Number Package µPD16837GS 30-pin plastic SSOP (300 mil) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Conditions Rating Unit Control block supply voltage VDD –0.5 to +7.0 V Output block supply voltage VM –0.5 to +15 V Input voltage VIN –0.5 to VDD + 0.5 V ±1.0 A/phase H bridge drive currentNote 1 IDR (pulse) PW ≤ 5 ms, Duty ≤ 30 % dissipationNote 2 PT 1.25 W Operating temperature range TA 0 to 75 °C Peak junction temperature TCH (MAX) 150 °C Storage temperature range Tstg –55 to +150 °C Power Notes 1. When only one channel operates. 2. When mounted on a glass epoxy board (100 mm × 100 mm × 1 mm) The information in this document is subject to change without notice. Document No. S12764EJ1V0DS00 (1st edition) Date Published January 1998 N CP(K) Printed in Japan © 1998 µPD16837 RECOMMENDED OPERATING RANGE Parameter Control block supply voltage Output block supply voltage H bridge drive current Symbol MIN. TYP. MAX. Unit VDDNote 1 4.0 5.0 6.0 V VM 10.8 12.0 13.2 V IDR (pulse)Note 2 –600 600 mA 120 kHz 75 °C 125 °C Operating frequency fO Operating temperature range TA Peak junction temperature 0 TCH (MAX) Notes 1. The low-voltage malfunction prevention circuit operates when VDD is 1.5 V or higher but less than 4 V (2.5 V TYP.). 2. PW ≤ 5 ms, Duty ≤ 10% ELECTRICAL CHARACTERISTICS (TA = 25 °C) TA = 25 °C and the other parameters are within their recommended operating ranges as described above unless otherwise specified. The parameters other than changes in delay time are when the current is ON. The low-voltage malfunction prevention circuit operates when VDD is 1.5 V to 4 V. Parameter Symbol Conditions MIN. TYP. MAX. Unit VM pin current (leakage current) IM VM = 13.2 V 50 µA VDD pin current IDD VDD = 6 V 200 µA High-level input current IIH VIN = VDD 0.25 mA Low-level input current µA IIL VIN = 0 –2.0 High-level input voltageNote 1 VIH VDD = 5 V, VM = 12 V 3.0 VDD + 0.3 V Low-level input voltageNote 1 VIL VDD = 5 V, VM = 12 V –0.3 0.8 V H bridge ON resistance (chs 2 and 3) RONa VDD = 5 V, VM = 12 V 3.0 4.0 Ω H bridge ON resistance (chs 1 and 4) RONb VDD = 5 V, VM = 12 V 1.5 2.0 Ω 3.0 mA 4.5 mA MAX. Unit H bridge switching current without Isa (AVE) load (chs 2 and 3)Note 2 H bridge switching current without VDD = 5 V VM = 12 V Isb (AVE) at 100 kHz load (chs 1 and 4)Note 2 ch2, ch3 2A, 3A, 2B, 3B Output Parameter Symbol Conditions MIN. TYP. Rise time tTLHa VDD = 5 V 200 ns Rising delay time tPLHa VM = 12 V 350 ns 20 Ω 110 ns Change in rising delay time ∆tPLHa Fall time tTHLa 200 ns Falling delay time tPHLa 350 ns ∆tPHLa 130 ns MAX. Unit Change in falling delay time at 100 kHz ch2, ch3 2A-2B, 3A-3B Parameter 2 Symbol Conditions MIN. TYP. Rising delay time differential tPLHa (A-B) VDD = 5 V, VM = 12 V 50 ns Falling delay time differential tPHLa (A-B) 20 Ω 50 ns at 100kHz Notes 1. The input pins are the IN and SEL pins. 2. Average value of the current consumed internally by an H bridge circuit when the circuit is switched without load. µPD16837 ELECTRICAL CHARACTERISTICS (TA = 25 °C) TA = 25 °C and the other parameters are within their recommended operating ranges as described above unless otherwise specified. The parameters other than changes in delay time are when the current is ON. ch1, ch4 1A, 4A, 1B, 4B Output Parameter Symbol Conditions MIN. TYP. MAX. Unit Rise time tTLHb VDD = 5 V 200 ns Rising delay time tPLHb VM = 12 V 350 ns 10 Ω 110 ns at 100 kHz 200 ns Change in rising delay time ∆tPLHb Fall time tTHLb Falling delay time tPHLb 350 ns ∆tPHLb 130 ns MAX. Unit Change in falling delay time ch1, ch4 1A-1B, 4A-4B Parameter Symbol Conditions MIN. TYP. Rising delay time differential tPLHa (A-B) VDD = 5 V, VM = 12 V 50 ns Falling delay time differential tPHLa (A-B) 10 Ω 50 ns at 100 kHz PIN CONFIGURATION Output block ch 1 IN1 1 30 SEL4 IN2 2 29 IN8 SEL1 3 28 IN7 DGND 4 27 VM4 1A 5 PGND1 6 Output block ch 4 25 PGND4 1B 7 24 4A VM1 8 23 VM3 2A 9 22 3B PGND2 10 Output block ch 2 26 4B 21 PGND3 2B 11 20 3A VM2 12 19 VDD IN3 13 18 SEL3 IN4 14 17 IN6 SEL2 15 16 IN5 Output block ch 3 3 µPD16837 TYPICAL CHARACTERISTICS PT vs. TA Characteristics IDD vs. VDD Characteristics 100 VM = 12 V TA = 25 °C Supply current IDD ( µ A) Total poser dissipation PT (W) 2 1.25 W 1 100 °C/W 0 0 25 50 75 100 125 80 60 40 20 0 150 3 4 5 6 Ambient temperature TA (°C) Supply voltage VDD (V) VIH, VIL, vs. VDD Characteristics RON vs. VM Characteristics 7 3 H bridge ON resistance RON (Ω) Input voltage VIH, VIL (V) VM = 12 V TA = 25 °C VIH 2 1 VIL 3 4 5 6 VDD = 5 V TA = 25 °C 3 RONa 2 RONb 1 10 7 11 Supply voltage VDD (V) 14 IIH vs. TA Characteristics VIN = VDD VDD = 5 V TA = 25 °C ISb 1 ISa 0.1 0 3 4 5 Supply voltage VDD (V) 4 13 0.2 High-level input current IIH (mA) Switching current without load ISa, ISb (mA) ISa, ISb vs. VDD Characteristics 2 0 12 Motor voltage VM (V) 6 7 0 20 40 Ambient temperature TA (°C) 60 µPD16837 VIH, VIL vs. TA Characteristics IDD vs. TA Characteristics 100 2 80 60 40 20 0 VDD = 5 V VM = 12 V Input voltage VIH, VIL (V) VDD pin current IDD ( µ A) VDD = 6 V 0 20 40 1.95 VIH 1.9 VIL 1.85 1.8 60 0 Ambient temperature TA (°C) ISb 0.6 ISa 0.4 0.2 VDD = 5 V VM = 12 V 100 kHz 0 20 40 RONa 3 2 1 VDD = 5 V VM = 12 V 0 60 RONb 0 Ambient temperature TA (°C) 20 40 60 Ambient temperature TA (°C) tTLH, tTHL vs. TA Characteristics (chs 1 and 4) tTLH, tTHL vs. TA Characteristics (chs 2 and 3) 100 90 tTHL 80 tTLH 70 60 VDD = 5 V, VM = 12 V 100 kHz, 10 Ω 0 20 40 Ambient temperature TA (°C) 60 Rise time/fall time tTLH, tTHL (ns) 100 Rise time/fall time tTLH, tTHL (ns) 60 RON vs. TA Characteristics 0.8 50 40 4 H bridge ON resistance RON (Ω) Switching current without load ISa, ISb (mA) ISa, ISb vs. TA Characteristics 1 0 20 Ambient temperature TA (°C) 90 80 tTLH 70 tTHL 60 VDD = 5 V, VM = 12 V 100 kHz, 20 Ω 50 0 20 40 60 Ambient temperature TA (°C) 5 tPLH, tPHL vs. TA Characteristics (chs 1 and 4) 300 300 tPLH 250 tPLH 250 tPHL 200 tPHL 200 150 100 tPLH, tPHL vs. TA Characteristics (chs 2 and 3) Rising/falling delay time (chs 2 and 3) ∆ tPLH, ∆ tPHL (ns) Rising/falling delay time (chs 1 and 4) tPLH, tPHL (ns) µPD16837 150 VDD = 5 V, VM = 12 V 100 kHz, 10 Ω 0 20 40 60 100 VDD = 5 V, VM = 12 V 100 kHz, 20 Ω 0 6 ∆ tPLH, ∆tPHL vs. TA Characteristics (chs 1 and 4) 40 60 ∆ tPLH, ∆ tPHL vs. TA Characteristics (chs 2 and 3) 100 100 ∆ tPHL 80 ∆ tPLH 60 40 20 0 20 Ambient temperature TA (°C) Rising/falling time differential (chs 2 and 3) ∆ tPLH, ∆ tPHL (ns) Rising/falling time differential (chs 1 and 4) tPLH, tPHL (ns) Ambient temperature TA (°C) VDD = 5 V, VM = 12 V 100 kHz, 10 Ω 0 20 40 Ambient temperature TA (°C) 60 ∆ tPHL 80 ∆ tPLH 60 40 20 0 VDD = 5 V, VM = 12 V 100 kHz, 20 Ω 0 20 40 Ambient temperature TA (°C) 60 µPD16837 PACKAGE DIMENSION 30-PIN SHRINK SOP (300 mil) (unit: mm) 30 16 3˚ +7° -3° detail of lead end 1 15 1.55±0.1 13.0 MAX. 7.7±0.3 1.05±0.2 0.8 +0.10 0.35–0.05 0.10 0.9 MAX. 0.20 –0.05 0.1±0.1 +0.10 1.8 MAX. 5.6±0.2 0.6±0.2 0.10 M 7 µPD16837 BLOCK DIAGRAM VDD 19 IN1 1 IN2 2 SEL1 3 IN3 13 IN4 14 SEL2 15 IN5 16 IN6 17 SEL3 18 IN7 28 IN8 29 SEL4 30 GND 4 Control circuit 1 Control circuit 2 Control circuit 3 Control circuit 4 LVP Remark Connect all VM and GND pins. : Internally pulled down to GND via 50 kΩ. 8 8 VM1 5 1A 7 1B 6 PGND 4 VM2 5 2A 26 2B 6 PGND 4 VM3 5 3A 26 3B 6 PGND 4 VM4 5 4A 26 4B 6 PGND H bridge 1 H bridge 2 H bridge 3 H bridge 4 µPD16837 FUNCTION TABLE VM1 to 4 VDD (common) IN1, 7 1A, 4A (OUTA) IN2, 8 1B, 4B (OUTB) SEL1, 4 GND (common) PGND1, 4 VM1 to 4 VDD (common) IN3, 5 2A, 3A (OUTA) IN4, 6 2B, 3B (OUTB) SEL2, 3 GND (common) PGND2, 3 Function Table (common to all chs) Input Output IN1 IN2 SEL OUTA OUTB H L H H L L L H L L L H H L H H H H H H ×: Don’t care × × L Z Z Z: High inpedance 9 µPD16837 ABOUT SWITCHING VM When output A is switched as shown in the figure on the right, a dead time (time during which both P ch and N ch are OFF) elapses to prevent Pch through current. Therefore, the waveform of output A (rise time, fall time, Pch and delay time) changes depending on whether output B is fixed to the high or low level. A B The output voltage waveforms of A in response to an input waveform where output B is fixed to the low level (1) or high level (2) are shown below. Nch Nch (1) Output B: Fixed to low level Output A: Switching operation (Operations of P ch and N ch are shown.) Dead time Input waveform Pch: OFF→ OFF→ Nch: ON→ OFF→ ON→ OFF→ OFF→ OFF→ ······ON······ ······OFF······ Voltage waveform at point A OFF→ ON→ Current OFF Current ON Output A goes into a high-impedance state and is in an undefined status during the dead time period. Because output B is pulled down by the load, a low level is output to A. (2) Output B: Fixed to high level Output A: Switching operation (Operations of P ch and N ch are shown.) Dead time Input waveform Pch: OFF→ OFF→ Nch: ON→ OFF→ ON→ OFF→ ······ON······ ······OFF······ Voltage waveform at point A OFF→ OFF→ OFF→ ON→ Current OFF Current ON Output A goes into a high-impedance state and is in an undefined status during the dead time period. Because output B is pulled up by the load, a high level is output to A. 10 µPD16837 The switching characteristics shown on the preceding pages are specified as follows (“output at one side” means output B for H bridge output A, or output A for output B). [Rise time] Rise time when the output at one side is fixed to the low level (specified on current ON). [Fall time] Fall time when the output at one side is fixed to the high level (specified on current ON). [Rising delay time] Rising delay time when the output at one side is fixed to the low level (specified on current ON). [Falling delay time] Falling delay time when the output at one side is fixed to the high level (specified on current ON). [Change in rising delay time] Change (difference) in the rising delay time between when the output at one side is fixed to the low level and when the output at the other side is fixed to the high level. [Change in falling delay time] Change (difference) in falling delay time between when the output at one side is fixed to the low level and when the output at the other side is fixed to the high level. [Rising delay time differential] Difference in rising delay time between output A and output B. [Falling delay time differential] Difference in falling delay time between output A and output B. Caution Because this IC switches a high current at high speeds, surge may occur due to the VM and GND wiring and inductance and degrade the performance of the IC. On the PWB, keep the pattern width of the V M and GND lines as wide and short as possible, and insert the bypass capacitors between V M and GND at a location as close to the IC as possible. Connect a low-inductance magnetic capacitor (4700 pF or more) and an electrolytic capacitor of 10 µ F or so, depending on the load current, in parallel. 11 µPD16837 RECOMMENDED SOLDERING CONDITIONS Solder this product under the following recommended conditions. For details of the recommended soldering conditions, refer to information document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and conditions other than those recommended, consult NEC. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow Package peak temperature: 235 °C; Time: 30 secs. max. (210 °C min.); Number of times: 3 times max.; Number of days: noneNote; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. IR35-00-3 VPS Package peak temperature: 215 °C; Time: 40 secs. max. (200 °C min.); Number of times: 3 times max.; Number of days: noneNote; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. VP-15-00-3 Wave soldering Package peak temperature: 260 °C; Time: 10 secs. max.; Number of times: once; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. WS60-00-1 Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C, 65% RH MAX. Caution 12 Do not use two or more soldering methods in combination. µPD16837 [MEMO] 13 µPD16837 [MEMO] 14 µPD16837 [MEMO] 15 µPD16837 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2